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    JFET BF256 Search Results

    JFET BF256 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DG191AP/B Rochester Electronics LLC DG191 - Dual SPDT, High-Speed Drivers with JFET Switch Visit Rochester Electronics LLC Buy
    DG182AP/B Rochester Electronics DG182 - Dual SPST, High-Speed Drivers with JFET Switch Visit Rochester Electronics Buy
    ISL28210FBZ-T13 Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ-T7A Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation
    ISL28210FBZ Renesas Electronics Corporation Precision Low Noise JFET Operational Amplifiers Visit Renesas Electronics Corporation

    JFET BF256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


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    PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    Untitled

    Abstract: No abstract text available
    Text: BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min


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    PDF BF256A BF256A

    BF256A

    Abstract: BF256
    Text: BF256A BF256A is a Preferred Device JFET - General Purpose N−Channel N−Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO−92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min


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    PDF BF256A BF256A BF256

    BF256A

    Abstract: BF256A circuit n channel jfet BF256A BF256
    Text: BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min


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    PDF BF256A BF256A r14525 BF256A/D BF256A circuit n channel jfet BF256A BF256

    BC237

    Abstract: motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 JFET Switching Transistors N–Channel 2 SOURCE 3 GATE 3 1 DRAIN MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage


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    PDF MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 236AB) MMBF4391LT1 MMBF4392LT1 MSC1621T1 MSC2404 MSD1819A BC237 motorola JFET 2N3819

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


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    PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    symbol transistor BC108

    Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS


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    PDF 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 symbol transistor BC108 BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA

    BC237

    Abstract: S11S C4 SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc


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    PDF MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323

    motorola JFET 2N3819

    Abstract: Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol


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    PDF MMBFU310LT1 236AB) Gat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 motorola JFET 2N3819 Y12 SO-16 transistor u310 VK200 rfc BC238 h parameter BC237 6 21 X2 marking code sot 363 BF245 common emitter amplifier for transistor bc107 sod-123 marking L2s

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    TO-226-AE

    Abstract: BC108 characteristic JFET BF245 BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C


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    PDF 2N5484 2N5486 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 TO-226-AE BC108 characteristic JFET BF245 BC237

    Untitled

    Abstract: No abstract text available
    Text: BF256LA Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256LA

    2n5462 replacement

    Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C


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    PDF 2N5460 2N5461 2N5462 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n5462 replacement motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819

    Untitled

    Abstract: No abstract text available
    Text: BF256LB Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256LB

    Untitled

    Abstract: No abstract text available
    Text: BF256LC Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256LC

    Untitled

    Abstract: No abstract text available
    Text: BF256 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256

    Untitled

    Abstract: No abstract text available
    Text: BF256SM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256SM

    bf256l

    Abstract: No abstract text available
    Text: BF256L Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF BF256L

    motorola JFET 2N3819

    Abstract: C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current


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    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola JFET 2N3819 C4 SOT-323 equivalent transistor 2N1711 mvm010 marking code C5 sot23 BC237 JFET 2N3819 MOTOROLA

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc


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    PDF 2N5555 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPF102 equivalent transistor

    Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25


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    PDF MPF102 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF102 equivalent transistor mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    transistor equivalent 2n5551

    Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C


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    PDF MMBF5460LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 transistor equivalent 2n5551 bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR