JFL20
Abstract: J60060-3CR J60030-3CR J600303S J60060-3C J60030-3P J600601C E162363 JFL15 JFL45
Text: Edison JFL Class J 600Vac, 1 to 60A Quick-Acting, Current-Limiting Fuses Dimensions inches Catalog Symbol: JFL Quick-Acting Current-Limiting Volts: 600Vac (or less) Amps: 1 to 60A IR: 200kA RMS Sym. Agency Information: CE, UL Listed, Std. 248-8, Class J,
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Original
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600Vac,
600Vac
200kA
E162363,
BU-SB07255
JFL20
J60060-3CR
J60030-3CR
J600303S
J60060-3C
J60030-3P
J600601C
E162363
JFL15
JFL45
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PDF
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JFL500
Abstract: IR-200ka JFL100 JFL110 J60200-1CR JFL70 J601003CR JFL200 E162363 JFL150
Text: Edison JFL Class J 600Vac, 70-600A Quick-Acting, Current-Limiting Fuses Dimensions inches Catalog Symbol: JFL Quick-Acting Current-Limiting Volts: 600Vac (or less) Amps: 70 to 600A IR: 200kA RMS Sym. Agency Information: CE, UL Listed Class J (Guide # JDDZ,
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Original
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600Vac,
0-600A
600Vac
200kA
E162363)
BU-SB07255
JFL500
IR-200ka
JFL100
JFL110
J60200-1CR
JFL70
J601003CR
JFL200
E162363
JFL150
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PDF
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power LED 650nm
Abstract: 1/Detector/"Detector IC"/"CD"/NSL-4960 NSL-4960 photoconductive cell cdse
Text: 5 OC 8255271 SILONEX INC SILO N EX SD IN C 0 0 2 1 9 _ 0 DE~Jfl25S271 t -4 1 -4 1 0 0 □□5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES NSL-2900, 3900, 4900 SERIES TO-8 • Th ree P h o to co n d u ctiv e M aterials • Po w er D issip atio n @ 25° C:
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OCR Scan
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Jfl25S271
NSL-2900,
power LED 650nm
1/Detector/"Detector IC"/"CD"/NSL-4960
NSL-4960
photoconductive cell cdse
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PDF
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Untitled
Abstract: No abstract text available
Text: blE 1324*1025 D O I W O 3bT • M I T I MITSUBISHI LSIs M5M5189AP, J-25,-35,-45,-55 6 5 5 3 6 -B IT 16384-W O R D BY 4 -B IT CMOS STATIC RAM MITSUBISHI (MEMORY/ASIC) DESCRIPTION This is a family of 16384 word by 4-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS
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OCR Scan
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M5M5189AP,
6384-W
5M5189AP,
b241fi25
384-W
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PDF
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Untitled
Abstract: No abstract text available
Text: • H Y M 7 V 7 2 A 2 0 0 B F -S E R IE S Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A200B is high speed 3.3Volt synchronous dynamic RAM module consisting of nine 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy
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OCR Scan
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2Mx72
HYM7V72A200B
44-pin
168-pin
0Q22fiF
jfl25
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PDF
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Untitled
Abstract: No abstract text available
Text: b SMT Aa S DQ2 3 Q5 7 5 bb • MITI MITSUBISHI LSIs M5M27C102K-151 1048576-BIT 65536-WORD BY 16-BIT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The M itsubishi M 5 M 2 7 C 1 0 2 K -1 5 I are high-speed 1048576 - b it ultraviolet erasable and electrically reprogram -mable read
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OCR Scan
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27C102K-15
1048576-BIT
65536-WORD
16-BIT)
M5M27C102K-15I
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PDF
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F3257
Abstract: MF3*L2DATXX mf31m1-l2dat
Text: MITSUBISHI M EMO RY CARD S T A T I C RAM C A R D S MF365A-L2D A T X X MF365A-L9D A T X X 8116-bit Data Bus MF3 12 9-L2D A T X X MF3 129-L9DATXX MF3527-L2DATXX MF3527-L9DATXX Static R A M C ard Connector Type MF3 5 13-L2DATXX MF35 13-L9DATXX Two-piece 68-pin
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OCR Scan
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8116-bit
MF365A-L2D
MF365A-L9D
129-L9DATXX
MF3527-L2DATXX
MF3527-L9DATXX
13-L2DATXX
13-L9DATXX
MF31M1-L2D
MF31M1-L9D
F3257
MF3*L2DATXX
mf31m1-l2dat
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PDF
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