tqfp128 weight
Abstract: RS232-Connector C161 C161CS J1850 JP13
Text: kitCON-161CS/JC/JI Hardware-Manual Edition December 1999 A product of a PHYTEC Technology Holding company kitCON-161CS/JC/JI In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark symbol does not infer that a
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kitCON-161CS/JC/JI
L-356e
D-55135
L-314e
tqfp128 weight
RS232-Connector
C161
C161CS
J1850
JP13
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3K45
Abstract: No abstract text available
Text: SKM 180A020 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions O, P JI Q%+ < * 55 /.&)3K45) 58),4:4)0 Values Units JAA @TA ?@CIB IVA X JA Z VA FFF [ @IA ?@JIB R 1 1 R Q% JIAA R 7¥ P Z 76 @TA 1 7¥U P Z 76U IVA 1 RL6 7L 7LU RW6 O2Y+ ?O5.=B O5 P JI ?TAB Q%
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180A020
3K45
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FPS200
Abstract: schematic diagram of fingerprint sensor schematic diagram of fingerprint attendance sensor block diagram of fingerprint sensor fingerprint based attendance system microcontroller fingerprint block diagram of Fingerprint based security system Fingerprint based security system Veridicom fps200 gabor filter
Text: Nios II Processor-Based Fingerprint Identification System Third Prize Nios II Processor-Based Fingerprint Identification System Institution: College of Communication Engineering, Chongqing University Participants: Ji Wang, Liang Wu, Yong Liu Instructor: He Wei
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1960s,
FPS200
schematic diagram of fingerprint sensor
schematic diagram of fingerprint attendance sensor
block diagram of fingerprint sensor
fingerprint based attendance system
microcontroller fingerprint
block diagram of Fingerprint based security system
Fingerprint based security system
Veridicom fps200
gabor filter
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1E12
Abstract: 264-psi PL0043 Simtek Corporation 264psi
Text: Simtek Surface Mount nvSRAM Products Tape & Reel Specification - SOIC Carrier Tape Dimensions Manufacturer [mfg datasheet] Package Type 32 300 SOIC 28 330 SOIC 28 300 SOIC Advantek pn SO32LP-BC-JI S28XLW-AC-IU S0-28L-BC-DD Dimensions in mm PL0043 01 Advantek
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SO32LP-BC-JI
S28XLW-AC-IU
S0-28L-BC-DD
PL0043
AA25505NP
1E12
264-psi
Simtek Corporation
264psi
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l501
Abstract: DC95F103W REFRIGERATION F103W NK103C1R2 Thermometrics JI103C1R2 L301
Text: NTC THERMISTORS: TYPE JI DOUBLE INSULATED WITH INSULATED WIRES DESCRIPTION: Chip thermistor housed in a tip which is moulded on to flexible circular cable. Tip and outer cable insulation material is thermoplastic elestomer. Tinned copper conductors have individual polyolefin insulation.
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5000mm
l501
DC95F103W
REFRIGERATION
F103W
NK103C1R2
Thermometrics
JI103C1R2
L301
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Untitled
Abstract: No abstract text available
Text: 88, 9 DO NOT SCALE DIMENSIONS 85, 4 THIRD ANGLE METRIC IN mm PROJECTION 83, 4 75 X 5, 08 = 76, 2 0,45- S, 08 if i - ~f~ \ —¡f - -ji |r~ ji ji I I ji li ji ~ir~~ -02, 6 0,2 0, 585 DETAIL 21 ,8 0, 85 "X 1 0, 7 -J L-, . i — DETAIL NO N F -48 ROW -Q •o
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EH-0467-96
--9Q53
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euro connectors 8609
Abstract: euro connector 8609
Text: 2 „ , 3 4 ^ + 0 -2 4 4 .6 - 0 TECHNICAL SPECIFICATION 1 . 0 - 8.1 1 2 i I íI HOUSING MATERIAL 1516 11 11 11 íI JI JI iI 11 iI JI JI JI iI THERMOPLASTIC POLYESTER U L 9 4V -0 , GREY iI H O U S IN G W HEN CAN USED W IT H CONNECTORS A CONTACT / HARPOON C O N T A C T A C T IV E
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000e-------------------------------TIN
DIN41612
d\engg\euro\8609
C-8609-2003
euro connectors 8609
euro connector 8609
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pA46 gF30 connector
Abstract: No abstract text available
Text: 85 -0,2 c32 c1 ^0,1 4 □ OO t fD / lih n r o u id id ü u id u id u "ij"u id u Iu u u ìd id u id u id ìd id id id u LO CO \D o' id i_n q32. 0,7 \ q1 6 ±0.1 94 -0.2 3Æ 88.9 31 X 2.54 -78.74 3 -0 ,4 0 2,5*0,1 ^ ¡ > i |i i ji j i ji i | i |i i ji j i ji l y
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M27C4002
Abstract: 1N914 PLCC44 Q0-Q15
Text: rZ 7 ^ 7 m» SG S-THO M SO N M27C4002 liS U @ ji@ llL lI ( § V ji lf ilD i 4 Megabit (256K x 16 UV EPROM and OTP ROM > VERY FAST ACCESS TIME: 80ns - COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE • LOW POWER "CMOS” CONSUMPTION: - Active Current 50mA at 5MHz
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M27C4002
10OjxA
24sec.
M27C4002
JLCC44W
1N914
PLCC44
Q0-Q15
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15318143
Abstract: No abstract text available
Text: DO NOT SCALE DATE D SYM REVISION RECORD AUTH DR CK 14MR98 A RELEASED 980005 DEH DEH 13JA00 Al OBSOLETE 000003 AAS W A 18FE00 A2 REINSTATED 000010 KBD KBD SYSTEMS 2 0 . 32 17.78 15.24 12.70 SEE NOTE 4 44486 -7 .6 2 — 5 . OB OHIO 2 .5 4 2 3 . 1 0 REF 0 ^ X 1 IL*t*-JI IL^ sJI I L*t*-JI I L ^ J I I L ^ J I I L ^ J I II
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14MR98
13JA00
18FE00
14MR98
07SE95
31MR98
15318143
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1641 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType ji-MOS II 15.9 MAX 0 32±02 “ '/ I High Speed, High Current DC-DC Converter, Chopper Regulator, Relay Drive and Motor Drive Applications
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2SK1641
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ocr4
Abstract: 2SD1762 transistor 2a h
Text: / T ransistors b~7 O C R 4 4 Q C 2SB11Í i 7 Ji/7' u - P N P h 7 > 15;Ji JSW^íÍlÍÍffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ii-Jfi\t"ji0 / /Dimensions Unit : mm) 1) VcE(sat) 0.5V (Typ.)t<£l'„ at lc / lB= 2 A / - 0 . 2 A 2) 2 S D 1 7 6 2 t z l > y j T i i 5 o
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2SB11Ã
2SD1762tzl
2SD1762.
O-220FP
ocr4
2SD1762
transistor 2a h
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Untitled
Abstract: No abstract text available
Text: JI.' i ’»<: P54/74FCT521/A/B/C P54/74PCT521/A/B/C ULTRA-HIGH SPEED CMOS 8-BIT IDENTITY COMPARATORS j A - - FEATURES Function, Pinout, and Drive Compatible with the
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P54/74FCT521/A/B/C
P54/74PCT521/A/B/C)
MIL-STD-883,
AE18190
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Untitled
Abstract: No abstract text available
Text: M ODEL XT39P-1 Crystal Surface Mount, Molded, 32.768 kHz FEATURES • Rugged, molded construction • Tape and reel packaging [ f ° [R i ji :L O O M 1] Operating Temperature: - 10°C to + 60° STANDARD ELECTRICAL SPECIFICATIONS FREQUENCY KHi MODE ESR Max.
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XT39P-1
30PPM
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Untitled
Abstract: No abstract text available
Text: ÇTEYC-1 15 1H P f l r ò # I I-: i/ft ht j g iS {60 H J iâ T EY C -11 51 H P ^ Î Ï S J k f i .¡it Ü Æ ÜS - ü Ji j r - m ¡i1: í ;i J is h Ji lr: .¡it fV : o 6. 2 2 0 6 8 K P a i li f f ît 2 4 V D C fi'j 0 .2 . 0 .2 5 . 0 .5 :iiiu Hi fr'i : 4 -2 0 m A { - M
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TEYC-11
24VDC
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Untitled
Abstract: No abstract text available
Text: 1 QuickS/vitch Products Hi gh-Speed CMOS Q ji ckSwi tch s iconducior,inc. QS34XR245 32- B t Low Resistance Multi Width™ Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5i2 bidirectional switches connect inputs
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QS34XR245
QS34XR245Q3
32-bit
QS3R245
80-pin
AN-13)
QS34XR245
MDSL-00253-02
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cl 740
Abstract: No abstract text available
Text: I ITCrtl JI L I I CL*J LI T - l 3/4 5mm Ultra Bright AlInGaP Yellow LED Lamps LTL2F3VYK LTL2H3VYK LTL2P3VYK LTL2R3VYK 8degree 15degree 22degree 30degree Package Dimensions Features Very high luminous intensity output. Low power consumption. High efficiency.
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30degree
cl 740
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n channel mosfet 900v
Abstract: No abstract text available
Text: 2SK2655-01R FU JI N-channel MOS-FET FAP-IIS Series 900V High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 03.0\ » > Applications - 100W Switching Regulators UPS
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2SK2655-01R
n channel mosfet 900v
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L04A
Abstract: No abstract text available
Text: 2SK2654-01 FU JI N-channel MOS-FET FAP-IIS Series 900V > Features - 2Q TO-3P 4.5 M Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - 150W > Outline Drawing High Speed Switching Low On-Resistance
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2SK2654-01
Vcc-90V;
L04A
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SN74LV74
Abstract: No abstract text available
Text: SN74LV74 DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOP _ SC LS1B9- FEBRUARY 1993 - REVISED MARCH 1994 EPIC Enhanced-Performance Implanted D, DB, OR PW PACKAGE (TOP VIEW CMOS) 2-ji Process Typical Vq lp (Output Ground Bounce)
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SN74LV74
MIL-STD-883C,
JESD-17
SN74LV74
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Untitled
Abstract: No abstract text available
Text: 2N930 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS Ji CASE TO-18 TIE 2N930 NPN AND 2N3548 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIERS AND DIRECT COUPLED CIRCUITS. Ä CBE ABSOLUTE MAXIMUM RATINGS
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2N930
2N3548
2N930
2N3548
100mA
300mV
400mW
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017Q
Abstract: No abstract text available
Text: FU JI 2SK1969-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,017Q 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK1969-01
017Q
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Untitled
Abstract: No abstract text available
Text: 2SK2760-01 FU JI SILSKLrtJiaJG FAP-IIS Series N-channel MOS-FET 600V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 > Applications - 0.6 Switching Regulators
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2SK2760-01
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Untitled
Abstract: No abstract text available
Text: I ITEffl JI L I I CL*J k I T - l3/4 5mm Ultra Bright AS AlInGaP Yellow LED Lamps LTL2F3KYK LTL2H3KYK LTL2P3KYK LTL2R3KYK 8degree 15degree 22degree 30degree Package Dimensions Features High luminous intensity output. Low power consumption. High efficiency.
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