JS88 Search Results

JS88 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MM54HC154JS/883		Rochester Electronics LLC	54HC154 - Decoder, 4-To-16-Line - Dual marked (5962-8682201LA)

JS88 Price and Stock

Filter by Manufacturer


Amphenol PCD SJS883000 CONN CRADLE 7 BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SJS883000	Bulk			1	1 $23.43 10 $19.101 100 $15.5743 1000 $14.88752 10000 $14.88752	Buy Now
Newark	SJS883000	Bulk	3		1	1 $19.85 10 $18.33 100 $17.61 1000 $17.24 10000 $17.24	Buy Now
Interstate Connecting Components	SJS883000		52			1 $14.7022 10 $14.7022 100 $11.5167 1000 $11.3279 10000 $11.3279	Buy Now
PEI Genesis	SJS883000		112		1	1 $14.37 10 $13.87 100 $11.45 1000 $11.45 10000 $11.45	Buy Now
Powell Electronics	SJS883000		18		1	1 $49.63 10 $49.63 100 $31.57 1000 $28.43 10000 $28.43	Buy Now

CDM Electronics	SJS883000				25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
FDH Electronics	SJS883000		187		1	1 $10.933 10 $9.939 100 $9.647 1000 $8.986 10000 $8.986	Get Quote
JRH Electronics SJS883000 CONN CRADLE 7 BLACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SJS883000	Bulk			1	1 $108.29 10 $108.29 100 $60.2727 1000 $54.25456 10000 $54.25456	Buy Now
Rochester Electronics LLC PAL20L2MJS883B OT PLD, PAL-TYPE, TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PAL20L2MJS883B	Bulk			15	1 - 10 - 100 $20.44 1000 $20.44 10000 $20.44	Buy Now
Rochester Electronics LLC PAL20RS4MJS883B OT PLD, PAL-TYPE, TTL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PAL20RS4MJS883B	Bulk			4	1 - 10 $77.69 100 $77.69 1000 $77.69 10000 $77.69	Buy Now
Rochester Electronics LLC MM54HC154JS-883 DUAL MARKED (5962-8682201LA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MM54HC154JS-883	Bulk			4	1 - 10 $83.62 100 $83.62 1000 $83.62 10000 $83.62	Buy Now

Find more JS88 price and stock on Findchips.com

JS88 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
JS8834-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8835-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8836A-AS	Toshiba	FET: 15V Drain Source Voltage: -5V Gate Source Voltage: 0.7A Drain Current	Scan	PDF
JS8837A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8838A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8850A-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8851-AS	Toshiba	FET, Power Gaas Fets (Chip Form)	Scan	PDF
JS8853-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8855-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8892-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8893-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF
JS8894-AS	Toshiba	MICROWAVE POWER GaAs FET	Scan	PDF

JS88 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA M ICRO W A VE POWER M ICRO W AVE SEM ICO NDUCTO R JS8850A-AS TECHNICAL DATA F E AT URES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTA TIO N CH IP FORM H IG H PO W ER p1dB = 2 1 5 d B m a t f = 15 G H z H IG H G AIN G^dB = 9 -0 dB at f = 15 GHz	OCR Scan	PDF	JS8850A-AS 15GHz 18GHz 18GHz 15GHz
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8838A-AS Power GaAs FETs Chip Form Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8838A-AS T0T725D MW10090196 JS8838A-AS
GK 087 Abstract: A1203 SN 46 LS 46 JS8855-AS Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER p1dB~ 31.5 dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 7dB at f = 15 GH z ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8855-AS 15GHz 18GHz JS8855-AS GK 087 A1203 SN 46 LS 46
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8837A-AS TECHNICAL DATA FEATURES : • HIGH POWER = 3 2 dBm at f = 8 GHz HIGH GAIN G1dB = 7 dB at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8837A-AS JS8837A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROW AVE PO W ER MICROWAVE' SEMICONDUCTOR GaAs FET JS8855-AS TECHNICAL DATA FEATURES: • HIGH POWER PldB = 32dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN GjdB = 7dB at f = 15 GHz ■ ION IMPLANTATION RF P E R F O R M A N C E	OCR Scan	PDF	JS8855-AS 32dBm 855-A 15GHz JS8855-AS
JS8835-AS Abstract: fu20 Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8835-AS TECHNICAL DATA FEATURES: • H IG H POW ER PjdB ~ 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gj^jg = 8 dB 3t f — 8 GHz RF P E R F O R M A N C E SUITABLE FOR C-BAND ION IM PLANTATIO N	OCR Scan	PDF	JS8835-AS JS8835-AS fu20
A1203 Abstract: JS8851-AS MW1011 Text: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8851-AS 24dBmatf 15GHz 18GHz 15GHz A1203 JS8851-AS MW1011
Untitled Abstract: No abstract text available Text: TOSHIBA M ICRO W AVE POWER M ICRO W AVE SEM ICO NDUCTO R GaAs FET JS8838A-AS TECHNICAL DATA F EA TURES: • ■ HIGH POWER PldB = 33.5 dBm at f = 8 GHz HIGH GAIN G^jg = 5.5 dB at f = 8 GHz RF P E R F O R M A N C E i SUITABLE FOR i ION IMPLANTATION C-BAND AMPLIFIER	OCR Scan	PDF	JS8838A-AS JS8838A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN G id B = 6 .0 dB at f = 2 3 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8893-AS JS8893-A 23GHz
Toshiba JS8836A-AS Abstract: JS8836A-AS Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER IdB = 29.5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci	OCR Scan	PDF	JS8836A-AS Bre084 JS8836A-AS Toshiba JS8836A-AS
JS8834-AS Abstract: No abstract text available Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36	OCR Scan	PDF	S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A
Untitled Abstract: No abstract text available Text: TOSHIBA M ICROW AVE POW ER MICROWAVE SEMICONDUCTOR JS8835-AS TECHNICAL DATA FEATURES: • H IG H POWER P jjg = 2 4 dBm at f = 8 G H z ■ H IG H GAIN Gj^jg = 8 dB st f = 8 GHz RF P E R F O R M A N C E GaAs FET ' , SUITABLE FOR C-BAND ION IMPLANTATION CHIP FORM	OCR Scan	PDF	JS8835-AS JS8835-AS
A1203 Abstract: JS8853-AS Text: TOSHIBA M IC R O W A V E P O W E R MICROWAVE SEMICONDUCTOR GaAs FET JS8853-AS TECHNICAL DATA FEATURES: • HIG H POW ER PldB = 28.0 dBm at f — 15 G Hz ■ SUITABLE FOR Ku-BAND , JOIM IM PLANTATIO N ■ HIG H GAIN GldB = 7 .0 dB at f = 15 G Hz ■ CHIP FORM	OCR Scan	PDF	JS8853-AS 15GHz 18GHz 15GHz A1203 JS8853-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8892-AS Power GaAs FETs Chip Form Features • High power - P 1dB = 2 1 .0 dBm at f = 2 3 GHz • High gain - G1dB = 6 .5 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8892-AS JS889Z-AS 23GHz MW10150196 JS8892-AS i7250

Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8892-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PldB = 21.0 dBm at f = 23 GHz HIGH GAIN GldB= 6.5 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8892-AS 23GHz JS8892-AS
JS8834-AS Abstract: S2230 Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8834-AS TECHNICAL DATA FEATURES: • MEDIUM POWER SUITABLE FOR C-BAND AMPLIFIER p1dB = 21 dBm at f = 8 GHz ION IMPLANTATION ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8834-AS JS8834-AS S2230
JS8893-AS Abstract: k-band amplifier Text: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM HIGH POWER PldB = 24.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6 -0 dB at f = 2 3 GHz RF P E R F O R M A N C E S P E C IF IC A T IO N S Ta = 2 5 ° C	OCR Scan	PDF	JS8893-AS 23GHz JS8893-AS k-band amplifier
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs Chip Form Features • High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z • High gain - G 1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8893-AS 23GHz MW10160196 JS8893-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8837A-AS Type17 JS8837A-AS MW10080196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	PDF	JS8853-AS 18GHz 15GHz MW10120196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IM PLANTATIO N CH IP FORM H IG H POW ER p1dB = 2 1 5 dBm at f = 15 G H z H IG H G AIN GjdB = 9 '0 dB at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C	OCR Scan	PDF	JS8850A-AS 18GHz 15GHz 15GHz
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE M IC R O W A V E POWER GaAs FET S E M IC O N D U C T O R JS8894-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 27.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6-0 dB at f = 23 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM	OCR Scan	PDF	JS8894-AS 23GHz 894-A
JS8836A-AS Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8836A-AS TECHNICAL DATA FEATURES: • HIGH POWER PjdB = 29.5 dBm at f = 8 GHz • HIGH GAIN G1dB = 7 5 dB at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° Ci	OCR Scan	PDF	JS8836A-AS JS8836A-AS
Untitled Abstract: No abstract text available Text: TOSHIBA MICROW AVE POW ER MICROWAVE SEMICONDUCTOR TECHNICAL DATA GaAs FET JS8835-AS FEAT URES: • HIG H POWER PjdB = 2 4 dBm at f = 8 GHz ■ H IG H GAIN Gjdß — 8 dB st f — 8 GHz RF P E R F O R M A N C E ■ ■ ■ SUITABLE FOR C-BAND ION IMPLANTATION	OCR Scan	PDF	JS8835-AS JS8835-AS

Privacy Settings

JS88 Search Results

JS88 Result Highlights (1)

JS88 Price and Stock

Amphenol PCD SJS883000

JRH Electronics SJS883000

Rochester Electronics LLC PAL20L2MJS883B

Rochester Electronics LLC PAL20RS4MJS883B

Rochester Electronics LLC MM54HC154JS-883

JS88 Datasheets (12)

JS88 Datasheets Context Search

Untitled

Untitled

GK 087

Untitled

Untitled

JS8835-AS

A1203

Untitled

Untitled

Toshiba JS8836A-AS

JS8834-AS

Untitled

A1203

Untitled

Untitled

JS8834-AS

JS8893-AS

Untitled

Untitled

Untitled

Untitled

Untitled

JS8836A-AS

Untitled