BYV27
Abstract: BYV27-50 BYV27 Series
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 02 1997 Nov 24 Philips Semiconductors Product specification Ultra fast low-loss
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M3D116
BYV27
SCA56
117027/1200/04/pp16
BYV27-50
BYV27 Series
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1997 Nov 25 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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M3D168
BYG80
DO-214AC
SCA56
117027/1200/02/pp20
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BYD77D
Abstract: BYD77C BYD77Eto BYD77 DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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M3D121
BYD77
135002/03/pp12
BYD77D
BYD77C
BYD77Eto
BYD77 DIODE
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BYD57M
Abstract: SOD87 marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD57 series Ultra-fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1998 Dec 04 1999 Nov 11 Philips Semiconductors Product specification Ultra-fast soft-recovery
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M3D121
BYD57
135002/04/pp12
BYD57M
SOD87 marking
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D122 BYV1100 Fast soft-recovery rectifier Product specification 1998 Dec 03 Philips Semiconductors Product specification Fast soft-recovery rectifier BYV1100 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package
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M3D122
BYV1100
MAM123
SCA60
135106/00/01/pp12
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BYG26
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BYG26 series SMA ultra fast soft-recovery controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast soft-recovery controlled avalanche rectifiers
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M3D168
BYG26
DO-214AC
603502/250/01/pp12
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BYW28 200
Abstract: BYW28 BYW28-600 SOD115 BYW28-500
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D333 BYW28 series Ultra fast low-loss controlled avalanche rectifier Product specification File under Discrete Semiconductors, SC01 1997 Nov 26 Philips Semiconductors Product specification Ultra fast low-loss
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M3D333
BYW28
OD115
half31
SCA56
117027/1200/01/pp12
BYW28 200
BYW28-600
SOD115
BYW28-500
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Diode SMA marking code PB
Abstract: es1d st
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 ES1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers
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M3D168
DO-214AC
603502/250/01/pp12
Diode SMA marking code PB
es1d st
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BYD1100
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D121 BYD1100 Hyper fast soft-recovery rectifier Product specification Supersedes data of 1998 Dec 03 1999 Nov 16 Philips Semiconductors Product specification Hyper fast soft-recovery rectifier BYD1100 FEATURES
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M3D121
BYD1100
135002/02/pp12
BYD1100
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DIODE US1J
Abstract: US1G diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 US1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers
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M3D168
DO-214AC
603502/250/01/pp12
DIODE US1J
US1G diode
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 11 Philips Semiconductors Product specification Voltage regulator diodes BZV85 series FEATURES DESCRIPTION
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M3D130
BZV85
DO-41)
BZV85-C3V6
BZV85-C75)
115002/00/02/pp8
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BZG03 Series
Abstract: 1c11 diode 9C39 marking C5 87 BZG03 C100 C110 C120 C130 C150
Text: BZG03 Series VOLTAGE REGULATOR DIODES SMA DO-214AC FEATURES : * Excellent stability * Low leakage current * Pb / RoHS Free 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15 * Complete Voltage Range 10 to 270 Volts * High maximum operating temperature 0.2 ± 0.07 1.2 ± 0.2
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BZG03
DO-214AC)
UL94V-O
BZG03 Series
1c11 diode
9C39
marking C5 87
C100
C110
C120
C130
C150
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BZG01
Abstract: C100 C110 C120 C130 C150 C160 C180
Text: DISCRETE SEMICONDUCTORS SMA BZG01 series Voltage regulator diodes Product specification 1999 Dec 23 Philips Semiconductors Product specification Voltage regulator diodes SMA BZG01 series FEATURES DESCRIPTION • Glass passivated DO-214AC surface mountable
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BZG01
DO-214AC
C100
C110
C120
C130
C150
C160
C180
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philips zener diode c24
Abstract: BZG03 C100 C110 C120 C130 C150 C160 DO-214AC 44 iz c220
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BZG03 series Voltage regulator diodes Preliminary specification Supersedes data of October 1993 1996 Jun 07 Philips Semiconductors Preliminary specification Voltage regulator diodes BZG03 series
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M3D168
BZG03
DO-214AC
philips zener diode c24
C100
C110
C120
C130
C150
C160
DO-214AC 44
iz c220
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3 phase waveform generator 50hz
Abstract: vertical IC tv crt horizontal deflection system of crt TV horizontal Deflection Systems AN5795NK ANS530K JTp 07
Text: ICs for TV Panasonic A N 5795N K Deflection Signal Processor 1C for CRT • Overview The AN5795NK is a deflection signal processor 1C for CRT. It can support up to 130kHz horizontal oscillation frequency. It incorporates horizontal position adjustment and duty-cycle adjustment functions.
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AN5795NK
AN5795NK
130kHz
130kHz
3 phase waveform generator 50hz
vertical IC tv crt
horizontal deflection system of crt
TV horizontal Deflection Systems
ANS530K
JTp 07
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Untitled
Abstract: No abstract text available
Text: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT
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18-GHz
TGS8632-XCC
43-dB
15-dB.
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WATKINS JOHNSON
Abstract: WATKINS JOHNSON amplifier
Text: uuU GaAs MMIC Amplifier 250-3000 MHz Bandwidth 3 6 dB m O u tp u t IP3 2 .6 dB N oise Figure 13 dB Gain 18 dBm PldB H igh R eliability SO T -89 Surface M oun t Package Frequency The Watkins Johnson A M I is a general purpose gain block that offers good dynamic range in a
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Untitled
Abstract: No abstract text available
Text: Preliminary specification Philips Semiconductors Voltage regulator diodes BZG03 series FEATURES DESCRIPTION • Glass passivatedb DO-214AC surface mountable package with glass passivated chip. • High maximum operating temperature The well-defined void-free case is of a
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BZG03
DO-214AC
MBH451
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Ultra fast Low-loss controlled avalanche rectifiers BYV27 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. • High maximum operating temperature
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BYV27
MQA200
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Untitled
Abstract: No abstract text available
Text: bb53R31 0D2707D b7b * A P X bRE D N AUER PH ILI PS/ DIS CRET E Philips Semiconductors Product specification Voltage regulator diodes DESCRIPTION BZG03 series QUICK REFERENCE DATA High reliability glass-passivated diodes in a small rectangular SMD SOD106A envelope. The envelope
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bb53R31
0D2707D
BZG03
OD106A
DO-214AC
BZG03-C10
BZG03-C270
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'JE D bbS3^31 00Eb7E'l 7S7 « A P X BZT03 SERIES l REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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00Eb7E
BZT03
BZT03-C7V5
BZT03-C510
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DIODE marking 7BA
Abstract: sg 7ba smd 7BA smd marking 1331 sot slt 13003 MARKING E2B diode SM 78A GI 312 diode TVPA TOP MARKING sno 357
Text: M I L - M - 3 8 5 1 0 / 78A 6 JUNE 1984 b’ UFLTTS’ tU rN G - M I L - M - 3 8 5 1 0 / 7 8 USAF 31 A u g u s t 1976 M I L I T A R Y S P E C I F I C A TI O N MI CR OC I R CU I T S , D I G I T A L , SCHOTTKY T T L , ARI THMETI C LOGIC U NI T/ FU N CT I ON GENERATORS,
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MIL-M-38510/78A
MIL-M-38510/78
MIL-M-38510,
A3796
DIODE marking 7BA
sg 7ba
smd 7BA
smd marking 1331 sot
slt 13003
MARKING E2B
diode SM 78A
GI 312 diode
TVPA TOP MARKING
sno 357
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Untitled
Abstract: No abstract text available
Text: • bb53tm □ □ Eb7T3 bS2 H A P X N AMER PHILIPS/DISCRETE BZW 03 S E R IE S b^E D REGULATOR DIO DES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression
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bb53t
03-C510
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c82 004
Abstract: C4V7 517
Text: N AUER PHILIPS/DISCRETE b=JE P • bb53^31 002b?ll 517 P hilips S em BZD23 series Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass
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BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53R31
2b71R
S0D81.
c82 004
C4V7 517
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