byv26 500
Abstract: byv26e philips BYV26 diode bYV26A MSA854 BYV26A BYv26 200
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV26 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of February 1994 1996 May 30 Philips Semiconductors Product specification Fast soft-recovery
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M3D116
BYV26
byv26 500
byv26e philips
diode bYV26A
MSA854
BYV26A
BYv26 200
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BYD67A
Abstract: No abstract text available
Text: TH97/10561QM BYD67A TW00/17276EM IATF 0060636 SGS TH07/1033 RIPPLE BOCKING DIODE SMA DO-214AC 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15 PRV : 300 Volts Io : 1.2 Amperes FEATURES : * * * * * * Glass passivated junction chip High maximum operating temperature Low leakage current
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TH97/10561QM
BYD67A
TW00/17276EM
TH07/1033
DO-214AC)
UL94V-O
BYD67A
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sot143 marking code JTp
Abstract: JTP 75 diode JTp smd diode MAM059 M3D070 BAS28 SMD MARKING CODE jtp marking JTp JTP 85 diode BAS28 JTp
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS28 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAS28 FEATURES DESCRIPTION • Small plastic SMD package The BAS28 consists of two
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M3D070
BAS28
BAS28
OT143
sot143 marking code JTp
JTP 75 diode
JTp smd diode
MAM059
M3D070
SMD MARKING CODE jtp
marking JTp
JTP 85 diode
BAS28 JTp
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1n4749a
Abstract: "Voltage Regulator Diodes" 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A
Text: 1N4728A to 1N4749A Voltage regulator diodes Rev. 02 — 30 October 2009 Product data sheet 1. Product profile 1.1 General description Low voltage regulator diodes in hermetically sealed small SOD66 DO-41 glass packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
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1N4728A
1N4749A
DO-41)
1n4749a
"Voltage Regulator Diodes"
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
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Voltage Regulator Diodes
Abstract: 1N4728A philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D130 1N4728A to 1N4749A Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes 1N4728A to 1N4749A FEATURES
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M3D130
1N4728A
1N4749A
DO-41)
MAM241
Voltage Regulator Diodes
1N4728A philips
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BYD73D
Abstract: BYD73B BYD73F BYD73G BYD73 byd73a
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 18 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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M3D119
BYD73
BYD73D
BYD73B
BYD73F
BYD73G
byd73a
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BYD33
Abstract: BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BYD33 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 File under Discrete Semiconductors, SC01 1996 Sep 18 Philips Semiconductors Product specification
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M3D119
BYD33
BYD33D
BYD33G
BYD33J
BYD33K
BYD33M
BYD33U
BYD33V
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BYD71
Abstract: BYD71A BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G G1996
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1996 Sep 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers
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M3D122
BYD71
BYD71A
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
G1996
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV4100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100
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M3D118
BYV4100
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BYV99
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of May 1993 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier
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M3D116
BYV99
MAM047
BYV99
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BYV99
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of May 1993 File under Discrete Semiconductors, SC01 1996 Feb 19 Philips Semiconductors Product specification
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M3D116
BYV99
BYV99
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV2100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV2100
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M3D116
BYV2100
MAM047
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BYM99
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM99 Ultra fast low-loss controlled avalanche rectifier Product specification Supersedes data of June 1994 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier
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M3D118
BYM99
BYM99
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MIL-L-85762
Abstract: Indicator Lamps "Indicator Lamps" LH8RAPP
Text: Night vision goggle compatible incicator lamps OXLEY NIGHT VISION GOGGLE COMPATIBLE INDICATOR LAMPS. The OXLEY MIL 80 range of military sealed indicator lamps l as now been extended to include light emitting diode indicator lamps whose o jtp u t contains
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600-900nm
MIL-L-85762)
3R006
STRNVG/6/91/CT
STR/LH/8/RAPP/NVG20
MIL-L-85762
Indicator Lamps
"Indicator Lamps"
LH8RAPP
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7542s
Abstract: AD7542AD
Text: ANALOG DEVICES □ FEATURES R esolutio n: 12 Bits N o n lin e a rity : ± 1/2LSB T m,n to T max L o w G ain D rift: 2ppm /°C ty p , 5 p p m C m ax M icroprocesso r C o m p a tib le Full 4 -Q u a d ra n t M u ltip lic a tio n CMOS jtP-Compatible 12-Bit DAC
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12-Bit
AD7542
16-pin
7542s
AD7542AD
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Untitled
Abstract: No abstract text available
Text: 9001 Series □upiin DIN41612 R T y p e F e m a le M aterial: Housing:30% Glass Filled PBT Contacts: Phosphor Bron 2e. UL94V-0. E le c tric a l C haracteristics: Current Rating: 2 A. Dielectric Withstanding Voltage: AC 1000V. Insulator Resistance: 1000MQ min.
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DIN41612
UL94V-0.
1000MQ
------------------------------------94Max
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE b^E » • bb53T31 002b7bb bEM HIAPX _ J ^ B ZV85 SERIES VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages
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bb53T31
002b7bb
DO-41
002b775
BZV85
02b77b
DQ2b777
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Untitled
Abstract: No abstract text available
Text: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT
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18-GHz
TGS8632-XCC
43-dB
15-dB.
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smd code marking LF sot23
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PMBD2837; PMBD2838 High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PINNING MARKING MARKING CODE
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PMBD2837;
PMBD2838
PMBD2837
PMD2837,
PMD2838
smd code marking LF sot23
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c3v6
Abstract: No abstract text available
Text: B ZX 55 SERIES J V VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range o f nominal working voltages from 2,4 V to 75 V with a tolerance of ± 5% international standard E24 .
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DO-35
DO-35
OD-27)
BZX55
17S0111
c3v6
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bzx55
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE D m J ^53*131 002bflQ2 M'IS * A P X _ bZ X 55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V
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002bflQ2
DO-35
kept33
BZX55
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WATKINS JOHNSON
Abstract: WATKINS JOHNSON amplifier
Text: uuU GaAs MMIC Amplifier 250-3000 MHz Bandwidth 3 6 dB m O u tp u t IP3 2 .6 dB N oise Figure 13 dB Gain 18 dBm PldB H igh R eliability SO T -89 Surface M oun t Package Frequency The Watkins Johnson A M I is a general purpose gain block that offers good dynamic range in a
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Untitled
Abstract: No abstract text available
Text: 12 13 10 CKTS 24 A .262 6.65 .380 9.65 .498 12.65 .616 15.65 .734 18.65 .852 21.65 .970 24.65 1.088 27.65 1.206 30.65 1.325 33.65 1.443 36.65 1.561 39.65 -V ////////M M ?/ /,I - D SEE NOTE 7 -0 — B— B" ±,003 ±0.08 " 02 ±.004 04 ± B 0,10 221±.002
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SD-43045-007
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Q02bS73 TT2 » A P X bTE B N AUER PHILIPS/DISCRETE BYD33D;G;J;K;M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers in TV receivers and also
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bbS3T31
Q02bS73
BYD33D
BYD33D
0D2b57a
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