JTP 55 diode
Abstract: diode sod57 SOD87 sod87 package Schottky SOD87 JTP 38 diode JTp 07
Text: Philips Semiconductors Thermal Considerations - Diodes General THERMAL CONSIDERATIONS - DIODES Thermal resistance Circuit performance and long-term reliability are affected by the temperature of the die. Normally, both are improved by keeping the die temperature junction temperature low.
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MBH562
MGA200
JTP 55 diode
diode sod57
SOD87
sod87 package
Schottky SOD87
JTP 38 diode
JTp 07
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JTP 68 diode
Abstract: SOD87 SC70-6 SO20 SSOP16 SSOP24 Thermal Considerations for Power Semiconductors SOD-64 SOD-106 SOD-83
Text: Philips Semiconductors Power Diodes Thermal Considerations Thermal resistance Circuit performance and long term reliability are affected by the temperature of the chip. Normally, both are improved by keeping the chip temperature junction temperature low.
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OT428
OT404
JTP 68 diode
SOD87
SC70-6
SO20
SSOP16
SSOP24
Thermal Considerations for Power Semiconductors
SOD-64
SOD-106
SOD-83
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JTP 38 diode smd
Abstract: p2w smd Transistor SMD SOT363 SC70 SC11 SC70-6 SO20 SSOP16 SSOP24 SC11 Thermal Considerations SOD61
Text: DISCRETE SEMICONDUCTORS General Section Module Thermal Considerations Module: THC00X Valid for: SC11 Thermal Considerations Power Diodes 1998 Dec 09 Philips Semiconductors Power Diodes Thermal Considerations THERMAL CONSIDERATIONS Thermal resistance junction
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THC00X
OT404
JTP 38 diode smd
p2w smd
Transistor SMD SOT363 SC70
SC11
SC70-6
SO20
SSOP16
SSOP24
SC11 Thermal Considerations
SOD61
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jtp 84
Abstract: jtp 87 VRLA UL924 817 CN
Text: Powered by MSJ 150 2V 150Ah MSJ 150 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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150Ah
10hr-rate
02/Cell
jtp 84
jtp 87
VRLA
UL924
817 CN
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BA315
Abstract: MAM246 SOD-27 stabistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA315 Low-voltage stabistor Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistor BA315 FEATURES
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M3D176
BA315
DO-35)
MAM246
BA315
MAM246
SOD-27
stabistor
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Untitled
Abstract: No abstract text available
Text: Powered by MSV 300 2V 300Ah MSV 300 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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300Ah
10hr-rate
02/Cell
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JTP 68 diode
Abstract: 260Ah
Text: Powered by MSJ 260 2V 260Ah MSJ 260 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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260Ah
10hr-rate
02/Cell
JTP 68 diode
260Ah
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BV 726
Abstract: 20HR 212-152 wheelchair abs 0812 evx12
Text: Powered by EVX 12300 12V 30Ah EVX 12300 is designed specially for electric vehicles, such as electric golf cart, electric wheelchair, mower, dust collector.etc. It has high cycling life, high efficiency and long service life. Specification Cells Per Unit
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20hr-rate
BV 726
20HR
212-152
wheelchair
abs 0812
evx12
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gp 542
Abstract: DBMM diode gp 421 20HR
Text: Powered by GP 672 6V 7.2Ah GP 672 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.
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high00
gp 542
DBMM
diode gp 421
20HR
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20Ah Battery
Abstract: 20HR DBMM diode gp 421 GP rechargeable battery UL1989 E50263
Text: Powered by GP 12200 12V 20Ah GP 12200 is a general purpose battery up to 5 years in standby service or more than 260 cycles at 100% discharge in cycle service. As with all CSB batteries, all are rechargeable, highly efficient, leak proof and maintenance free.
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20hr-rate
Dis00
20Ah Battery
20HR
DBMM
diode gp 421
GP rechargeable battery
UL1989
E50263
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csb 455 c
Abstract: 20HR wheelchair wheelchair circuit CSB 455 electric wheelchair
Text: Powered by EVX 12400 12V 40Ah EVX 12400 is designed specially for electric vehicles, such as electric golf cart, electric wheelchair, mower, dust collector.etc. It has high cycling life, high efficiency and long service life. Specification Cells Per Unit
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20hr-rate
csb 455 c
20HR
wheelchair
wheelchair circuit
CSB 455
electric wheelchair
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BZG03 Series
Abstract: 1c11 diode 9C39 marking C5 87 BZG03 C100 C110 C120 C130 C150
Text: BZG03 Series VOLTAGE REGULATOR DIODES SMA DO-214AC FEATURES : * Excellent stability * Low leakage current * Pb / RoHS Free 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15 * Complete Voltage Range 10 to 270 Volts * High maximum operating temperature 0.2 ± 0.07 1.2 ± 0.2
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BZG03
DO-214AC)
UL94V-O
BZG03 Series
1c11 diode
9C39
marking C5 87
C100
C110
C120
C130
C150
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C82 diode
Abstract: BZG03-C33 iz c220 marking code C15 BZG03 C100 C110 C120 C130 C150
Text: Certificate TH97/10561QM BZG03 Series Certificate TW00/17276EM VOLTAGE REGULATOR DIODES SMA FEATURES : * Complete Voltage Range 10 to 270 Volts * High maximum operating temperature * Excellent stability * Low leakage current 4.4 ± 0.2 5.4 ± 0.2 1.3 ± 0.2
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TH97/10561QM
BZG03
TW00/17276EM
UL94V-O
C82 diode
BZG03-C33
iz c220
marking code C15
C100
C110
C120
C130
C150
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C82 diode
Abstract: BZG03-C10 marking code C15 BZG03-C200 C100 C110 C120 C130 bzg03c10 c91 02
Text: TH97/10561QM BZG03-C10 ~ BZG03-C200 TW00/17276EM IATF 0060636 SGS TH07/1033 VOLTAGE REGULATOR DIODES SMA FEATURES : * Complete Voltage Range 10 to 200 Volts * High maximum operating temperature * Excellent stability * Low leakage current 4.2 ± 0.25 5.3 ± 0.35
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TH97/10561QM
BZG03-C10
BZG03-C200
TW00/17276EM
TH07/1033
UL94V-O
C82 diode
BZG03-C10
marking code C15
BZG03-C200
C100
C110
C120
C130
bzg03c10
c91 02
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE b^E » • bb53T31 002b7bb bEM HIAPX _ J ^ B ZV85 SERIES VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages
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bb53T31
002b7bb
DO-41
002b775
BZV85
02b77b
DQ2b777
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Untitled
Abstract: No abstract text available
Text: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT
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18-GHz
TGS8632-XCC
43-dB
15-dB.
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cy7c9101
Abstract: 0eya CY7C9101-35GMB jtp47 jtP43 7c9101 h9019 5962-8951701UX th601 JTP12
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS 22 23 REV SHEET 11 10 12 13 14 15 16 I I 11 PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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16-BIT
5962-E1153
SCOP9101-45FMB
5962-8951702XX
CY7C9101-35DMB
5962-8951702YX
CY7C9101-35LMB
5962-8951702ZX
CY7C9101-35GMB
5962-8951702UX
cy7c9101
0eya
jtp47
jtP43
7c9101
h9019
5962-8951701UX
th601
JTP12
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS / D I S CR E T E 2SE I> • bb53T31 O O lb T S I A VOLTAGE REGULATOR DIODES Q ■ BZV85 SERIES T -//-/3 V Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended fo r stabilization purposes. The series covers the normalized E24 ± 5% range o f nominal working voltages
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bb53T31
BZV85
DO-41
bb53T31
T-//-13
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54F620
Abstract: smd marking GAB SA U SMD marking E6a
Text: „us GOVHNMiNT PRINTING OFFICE: l » » 7 — 7 4 * .1 I « 4 0 9 1 I DESC FORM 193 SEP 87 D IS T RI BU T IO N S T A T E M E N T A. 5962-E1802 A pproved lor p u b lic re le a se ; distrib u tio n is u nlim ited. This Material Copyrighted By Its Respective Manufacturer
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-12WA091l
5962-E1802
MIL-STD-883,
MIL-STD-883
MIL-M-38510
MIL-BUL-103.
MIL-BUL-103
MIL-M-3851Ã
1990-750-527R
54F620
smd marking GAB
SA U
SMD marking E6a
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Low-voltage stabistor FEATURES BAS17 PINNING • Low-voltage stabilization PIN • Forward voltage range: 580 to 960 mV • Total power dissipation: max. 250 mW. DESCRIPTION 1 anode 2 not connected 3 cathode APPLICATIONS
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BAS17
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Untitled
Abstract: No abstract text available
Text: i REVISIONS LTR DESCRIPTION A DATE Convert to m ilit a r y drawing. Changes to tab le I. Changes to fig u re s 2 and 4. E d ito ria l changes throughout. B APPROVED 19 Aug 87 Change to table I and fig u re 1 dimensions. w u U 22 Jan 88 1 CURRENT CAGE CODE 67268
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MIL-STD-883,
MIL-M-38610
8601701QX
AM2904/BQA
8601701YX
AM2904/BYC
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ms-6506
Abstract: No abstract text available
Text: OESC FORM 193 SEP 87 DISTRIBUTION S T A T E M E N T A. * U.S. GOVtRNMiHT HUNTINGOFFICE: 1997— 74«-IJ9/60»l 1 5 9 6 2 -E ll 89-1 Approved for p ublic release; d istribu tion is unlim ited. 1. SCOPE 1 .1 S cope. T h is draw ing d e s c r ib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in acco rd an ce
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-IJ9/60Â
5962-E1189-1
5962-8952501KX
SNJ54AS823W
5962-8952501LX
54AS823JT
5962-89525013X
54AS823FK
ms-6506
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BA315
Abstract: 7A SF
Text: Philips Semiconductors Product specification Low-voltage stabistor BA315 FEATURES DESCRIPTION • Low-voltage stabilization Low-voltage stabilization diode in a hermetically-sealed SOD27 DO-35 glass • Forward voltage range: 480 mV to 1050 mV package. • Total power dissipation:
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BA315
DO-35)
711002b
BA315
7A SF
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54ALS29821
Abstract: No abstract text available
Text: DFSf FORM *19? St.r o / D IS T R IB U T IO N S T A T E M E N T A . * U.S. GOVERNMENT PRINTING OFFICE: 19f7 — 74S-129/609 1 A p p ro v e d fo r p u b lic r e le a s e ; d i s t r ib u t io n Is u n lim it e d . 5962—E1618 1. SCOPE 1.1 Scope. T h is dra w in g d e s c rib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u it s in accordance
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5962-9061601LX
SNJ54ALS29821JT
550-S4T
54ALS29821
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