smd cjj
Abstract: LT 5203
Text: 3A Adjustable Linear Regulators Description T h e C S-5203-1 series o f lin ear re g u lato rs p ro v id es 3A at a d ju sta b le an d fix ed v o lta g es w ith an a c cu ra cy o f ± 1 % . T h e a d ju sta b le v ersio n u ses tw o ex tern a l re sisto rs to set
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S-5203-1
CS-5203
CS-5203-1DP3
smd cjj
LT 5203
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LTl084
Abstract: LTl085 12v DC 60W
Text: i^ruum _ LT1083/LT1084/LT1085 TECHNOLOGY 7.5A, 5A, 3A Low D ro p o u t Positive A d ju s ta b le Regulators FCRTURCS D C S C R IP TIO n • ■ ■ ■ ■ ■ ■ ■ The LT1083 series of positive adjustable regulators are designed to provide 7.5A, 5Aand 3A with higherefficiency
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LT1083/LT1084/LT1085
LT1083
LTl084
LTl085
12v DC 60W
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Untitled
Abstract: No abstract text available
Text: S E M I C O N D U C T O R tm w w w .fa irc h ild s e m i.c o m RC1587 3A A d ju s ta b le /F ix e d Low Dropout Linear Regu lator Features • • • • • • • Fast transient response Low dropout voltage at up to 3A Load regulation: 0.05% typical Trimmed current limit
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RC1587
O-220
O-263
TheRC1587
andRC1587-1
DS30001587
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fast recovery diode 20ns
Abstract: J533 SF3L60U
Text: Super Fast Recovery Diode Single Diode Wtm SF3L60U OUTLINE 600V 3A Feature • rüiitEEFRD • High Voltage Super FRD • Low Noise • trr= 20ns • • trr=20ns • Full Molded 71 [Æ -JU K • « 1 I Î E 2kV«|Œ • Dielectric Strength 2kV Main Use
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SF3L60U
fast recovery diode 20ns
J533
SF3L60U
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3L60
Abstract: No abstract text available
Text: n - n x V 'C X - Y Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D3L60 600V 3A • h iîj ï • t r r 50ns m m •P F C •SRSÎÜ •75-rjn -f-ju •T V + B s RATINGS Absolute Maximum Ratings a E-f- a Item Operating Junction Temperature Average Rectified Forward Current
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D3L60
75-rjn
50HziE5g
J515-5
3L60
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J533
Abstract: 5KV fast recovery DIODE
Text: Super Fast Recovery Diode Single Diode Wtm D3L60 OUTLINE 600V 3A Feature • rüIitEEFRD • High V oltage S u p er FRD • trr=50ns • trr= 5 0 n s • Z> lÆ -JU K • Full M o ld e d • « lIÎ E 1 .5 k V « |Œ • D ielectric S tre n g th 1,5kV • PFC
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D3L60
J533
5KV fast recovery DIODE
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DIODE s3l 400v
Abstract: diode S3L 13 DIODE s3l S3L 9d S3L40 DIODE s3l 70 S3L diode
Text: n - n x V 'C X - Y - Super Fast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L40 Package I AX14 400V 3A IÍ7+0.5 26.5±2 •trr50ns u> H m ° I> S3L 9D •S R S ÍÜ • 7 5 - r jn - f- ju •^ B s O A .P ,^ tw 26.5±2 7-0 ffi'E Polarity Type No. • i l i S s FA
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S3L40
trr50ns
J515-5
DIODE s3l 400v
diode S3L 13
DIODE s3l
S3L 9d
S3L40
DIODE s3l 70
S3L diode
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DIODE 3LU
Abstract: DIODE 3LU 28 3lu diode DIODE 3LU 35
Text: n - n x V 'C X - Y - Super Fast Recovery Diode S3L20U Axial Diode OUTLINE DIMENSIONS Package I AX14 200V 3A IÍ7+0.5 26.5±2 •trr50ns 7-0 u> H m 3LU 05 •S R S ÍÜ • 7 5 - r jn - f- ju •^ B s O A .P ,^ tw 26.5±2 ° I> ffi'E Polarity Type No. • i l i S s FA
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S3L20U
trr50ns
J515-5
J515-5
DIODE 3LU
DIODE 3LU 28
3lu diode
DIODE 3LU 35
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Untitled
Abstract: No abstract text available
Text: h a r r i s F S L 9 2 3 S E M I C O N D U C T O R D , 7 F S L 9 2 3 R Radiation Hardened, SEGR Résistant P-Channel Power MOSFETs Ju n e 1 9 9 7 Features Package • 3A, -200V, rDS ON = 1.50S1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si)
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-200V,
O-205AF
1-800-4-HARRIS
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LV 1084 73
Abstract: LV 1084 L1585-3 7R080
Text: Pa I H a i m p r e l im in a r y in f o r m a t io n le lw O m . Semiconductor, Inc. TCL1584 TCL1585 TCL1585A TCL1587 7A / 4.6A / 3A, FAST RESPONSE, LOW DROPOUT POSITIVE LINEAR VOLTAGE REGULATORS FEATURES GENERAL DESCRIPTION • F ix e d a n d A d ju s ta b le V o l t a g e s
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TCL1584
TCL1585
TCL1585A
TCL1587
TCL1584/1585/1em
TCL1584:
TCL1584/87
LV 1084 73
LV 1084
L1585-3
7R080
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ScansU9X26
Abstract: No abstract text available
Text: BblCOKOBOJlbTHblR lUVmyjIbCHblR KEHOTPOH PULSE RECTIFIER TUBE BI/11-50/25 BbicoKOBonbTHbiü nMnyjibCHbiií KeHOTpoH BM 1-50 /2 5 npeflHa3HaHeH ,qrm paóOTbi b «anecTBe KnunnupyK ju^ero, 3a i4 M T H o ro, 3 a p a ,q H o ro m B binp H M M T e /ibH oro flu ofla b paflMOTexHMHecKMx ycTpoMCTBax CTannoHaph o íí M noflB iD K H O íí a n n a p a T y p b i.
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BI/11-50/25
BM1-50/25
ScansU9X26
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M150 rectifier
Abstract: BW150 "Rectifier Tube"
Text: BblCOKOBOJlbTHblR lUVmyjIbCHblR KEHOTPOH PULSE RECTIFIER TUBE BI/11-50/25 BbicoKOBonbTHbiü nMnyjibCHbiií KeHOTpoH B M 1-50 /2 5 npeflHa3HaHeH ,qrm paóOTbi b «anecTBe KnunnupyK ju^ero, 3a i4 M T H o ro, 3 a p a ,q H o ro m B binp H M M T e /ibH oro fluofla b paflMOTexHMHecKMx ycTpoMCTBax CTannoHaph o íí M noflB iD K H O íí a n n a p a T y p b i.
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BW1-50/25
BM1-50/25
M150 rectifier
BW150
"Rectifier Tube"
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ju 3a diode
Abstract: No abstract text available
Text: FAST RECOVERY DIODE NSF03A60 s.sA /eoov/trr :35nsec FEATU RES o S u rface M o u n tin g Device o U ltra -F a st Recovery o L ow F o rw ard V oltage D rop o L ow P o w er L oss, H igh E fficiency o H ig h Surge C ap ab ility ° P a c k ag e d in 16m m T ap e a n d Reel
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35nsec
NSF03A60
SF03A
ju 3a diode
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3R3TI30E-080
Abstract: R611
Text: 3R3TI30E-080 y "f V K •U ”*f ' J X ^ v E ci- ^ '•Outline Drawings DIODE and TY R IS TO R M O D U LE : Features • > • i§i5w r'^?JS • ¡66H a v f y / G lass Passivatio n Chip E a s y C o n n e c tio n Insulated Type • d i/d tjR iSA ^ ? v.'
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3R3TI30E-080
50/60HzjEt
3R3TI30E-080
R611
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Untitled
Abstract: No abstract text available
Text: ^ U 7 V ^ < 7 t- - K Bridge Diode Single In-line Package • O U T L IN E D IM E N S IO N S D5SBD 4.6 152 3 .6 1»'z 600V 6A 2.7* 0.7101 Unit i mm ■ R A T IN G S A bsolute Maximum R atings * IE # Symbol u Item & — ~ - f.-. .'7 C ond itions
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D5SB20
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Untitled
Abstract: No abstract text available
Text: y >Single ^ KIn-line > 7Package <>S! Bridge Diode • O U T L IN E D IM E N S IO N S D10XBDH 600V 10A ■ R A T IN G S A bsolute Maximum R atings m n Item Symbol & -. 4* SEMr ~ At - - — _ b. C onditions D10XB20H Tstg S to ra g e Tem perature
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D10XBDH
D10XB20H
D10XB60H
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h11q
Abstract: tfk K TFK 19 018 2DI150D-050 TFK 600 TFK 450 TFK 03 Diode TFK - 018 TFK diode tfk t 39
Text: 2 I 1 5 O D - O 5 O O 50A D /< 7 - — )V P O W E R T R A N SIS T O R M O D U LE • I f f i : Features • 7 1; - * < y • hFE/^fij^ • tell&B 5j"— KrtSK Including Free Wheeling Diode High DC Current Gain Insulated Type IfflìÈ : A pplications High Power Switching
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2DI150D-050
h11q
tfk K
TFK 19 018
TFK 600
TFK 450
TFK 03 Diode
TFK - 018
TFK diode
tfk t 39
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2SD1846
Abstract: 2SD184 SM231
Text: Power Transistors 2SD1846 2SD1846 Silicon NPN Triple-Diffused Planar Type P a c k a g e D im e n s io n s H o riz o n ta l D e fle c tio n O u tp u t • F e a tu re s • • • • • • Damper diode built-in Minimizes external component counts and simplifies circuitry
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2SD1846
75kHz
Tc-25Â
2SD1846
2SD184
SM231
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marking J3U
Abstract: ERC81 marking j3a A359
Text: ERC81 -006 3A _ K • fl-ïfé'+îÉ : Outline Drawings SCHOTTKY BARRIER DIODE : Features • iffcVf I8SÎF : Marking Low Vf Super high speed switching. Color code : Silver y ^ Abridged type nome #EE? ; j ô Voltage class cj> Dir m» Lot No. \; High reliability by planer design
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ERC81
marking J3U
marking j3a
A359
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6R1T130Y-080
Abstract: 6R1TI30Y-080 THY H 75 B 80 ALPs vcr R702 tyristor
Text: 6R1TI30Y-080 & ± s < r7 — :£ '> 3 . — JU * Outline Drawings K * 1M DIODE and TYRISTO R M O DULE '. Features • Glass Passivation Chip • j £ S E a s y • JM IJii Connection Insulated Type • d i/d tffi-M *'"*# l ' Large di/dt • d v /d tlW M ^ ^ £ l '
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6R1TI30Y-080
50/60H2Iffi;
S53B7T2
-25-C
223B715
0Q055T4
6R1T130Y-080
6R1TI30Y-080
THY H 75 B 80
ALPs vcr
R702
tyristor
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Untitled
Abstract: No abstract text available
Text: LM 2576 M iere/ LM2576 52kHz Simple 3A Buck Voltage Regulator General Description Features The LM2576 series of monolithic integrated circuits provide all the active functions for a step-down buck switching regulator. Fixed versions are available with a 3.3V, 5V, 12V,
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LM2576
52kHz
LM2576
11DQ06
O-220
12-AG7
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KF 35 transistor
Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Text: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications
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D11500-050
E82988
50A///S
KF 35 transistor
power bjt transistor 600v
690 lc
b20 diode
two transistors
IEBo-400mA
fblu
3A500
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Untitled
Abstract: No abstract text available
Text: '> 3 U h "j —K Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF5S4 40V 5A ÉÜÜSÉ • T j 1501C • P rrsm II • f c £ : 7 J lÆ - K • ffg * B Œ 2 K V « E m & •S R S S •D C /D C •S S . y -A . O A«ü • a s , t k - s ^ j h is s • Æ të ü
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1501C
0003m
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Untitled
Abstract: No abstract text available
Text: 4R3TI30Y-080 k »i m S ± / < 7 - ;ES>a.-;U u x » a t e g s ? 3 . - ju DIODE and TYRISTOR MODULE : Features —*> 3 / - f G l a s s Passivation Chip • • Easy Connection • Insulated Type • d i/d t flit 0 * * 3 I ' Large d i/d t • d v /d t Large d v /d t
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4R3TI30Y-080
I95t/R89>
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