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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD444008L 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ^¡PD444008L is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


    OCR Scan     		juPD444008L 512K-WORD PD444008L 36-pin 44-pin PD444008LLE-A10 PD444008LLE-A12 PDF

    nec upd ic

    Abstract: sb 020i
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT juPD444008 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Description The ,uPD444008 is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The ,uPD444008 is packaged in 36-pin plastic SOJ and 44-pin plastic TSOP (II).


    OCR Scan     		uPD444008 512K-WORD 36-pin 44-pin PD444008LE-8 PD444008LE-10 PD444008LE-12 PD444008LE-15 nec upd ic sb 020i PDF