Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS 4.50 .177 2.00 .079 24.00 .945 10.20 .402 4.00 .157 1 18.00 .709 30.00±0.25 1.181±.010 DESCRIPTION, ECN, EAR NO. DATE APP'D C PRODUCT DRAWING EAR 13532 JUN10/09 K.L. DATE CODE INK MARKING 1 13.64±0.40 .537±.016 14.00 .551 CONTACT
|
Original
|
JUN10/09
039ENT
FEB28/07
P-MUSB-AA11-XX
|
PDF
|
ODV-065R14E17K-G
Abstract: ODV2-065R18J-G 0/ODV-065R14E17K-G V/ODV-065R18EK-G Comba Telecom TA-E12FDA-A ODV-065R17E18K-G ODV-065R17B ODV-065R15B15J15J ODV-065R15E18K-G
Text: Antenna & Subsystem Product Catalog Ver2.1 Dec 2012 Antenna & Subsystem Contents Legal
|
Original
|
SE-167
ODV-065R14E17K-G
ODV2-065R18J-G
0/ODV-065R14E17K-G
V/ODV-065R18EK-G
Comba Telecom
TA-E12FDA-A
ODV-065R17E18K-G
ODV-065R17B
ODV-065R15B15J15J
ODV-065R15E18K-G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
|
PDF
|
ELM34417AA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容,低工作电 •Vds=-30V 压,低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值
|
Original
|
ELM34417AA-N
P06P03LVG
JUN-10-2004
ELM34417AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
|
PDF
|
tcm8210
Abstract: TCM8210MD ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF
Text: TCM8210MD A Ver. 2.07 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image
|
Original
|
TCM8210MD
TCM8210MD
tcm8210
ALC 655
VGA camera module
TCM8210MDA
ITU656
RGB565
YUV422
0YUV422
QCIF
|
PDF
|
P06P03LVG
Abstract: P06P03 niko-sem
Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
|
Original
|
P06P03LVG
JUN-10-2004
P06P03LVG
P06P03
niko-sem
|
PDF
|
P06P03
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)
|
Original
|
ELM34417AA-N
P06P03LVG
JUN-10-2004
P06P03
|
PDF
|
1-1393637-0
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - H 9 5 - 0 ,4 P /N 5 5 - 0 ,4 0,1 D 8 5 - 0 ,2 old DIST 2 9 ,0 2 - 0 , 2 0,1 C DESCRIPTION DWN DATE APVD AEG MKO D4 ECR—0 8 —012252 18-03-09 D5 ECR—10—002555
|
OCR Scan
|
ECR--10--002555
ECR-10
JUN10
13SEP11
1-1393637-0
|
PDF
|
74LV393D
Abstract: 74LV393PW
Text: Philips Semiconductors Product specification Dual 4-bit binary ripple counter 74LV393 FEATURES DESCRIPTION • Optimized for Low Voltage applications: 1.0 to 3.6V The 74LV393 is a iow-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT393.
|
OCR Scan
|
74LV393
74LV393
74HC/HCT393.
Jun10
74LV393D
74LV393PW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GM M M n i "ZD 74LV373 Octal D-type transparent latch 3-State Product specification Supersedes data of 1997 March 04 IC24 Data Handbook Philips Semiconductors 1998 Jun 10 PHILIPS Philips Semiconductors Product specification Octal D-type transparent latch (3-State)
|
OCR Scan
|
74LV373
74LV373
|
PDF
|
74LV3770
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal D-type flip-flop with data enable; positive edge-trigger FEATURES DESCRIPTION • Optimized for Low Voltage applications: 1.0 to 3.6V The 74LV377 is a low-voltage CMOS device and is pin and function compatible with 74HC/HCT377.
|
OCR Scan
|
74LV377
74HC/HCT377.
74LV3770
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ASK22410- SHEET 1 OF 1 POSITRONIC ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASIA PTE. LTD. ASSUMES NO
|
OCR Scan
|
ASK22410-
Jun10
ASK22410-1
SP5N2N2RN3RN4K1F0001
ASK22410-2
SP5N2N2RN3RN4K1F0001/AA
COM/PRODUCTS/146/SCORPION
SP5N2N2RN3RN4K1F0001
SP5N2N2RN3RN4K1F0001/AA
ASK22410-*
|
PDF
|
305 5VL
Abstract: C510 philips zener diode c18 BZD27 BZD27-C510 "Voltage Regulator Diodes" BZD27-C3V6 BZD27-C7V5 C100 C110
Text: Product specification Philips Semiconductors Voltage regulator diodes BZD27 series FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass SOD87 package through Implotec ^ technology. This package is • High maximum operating temperature
|
OCR Scan
|
BZD27
Jun10
305 5VL
C510
philips zener diode c18
BZD27-C510
"Voltage Regulator Diodes"
BZD27-C3V6
BZD27-C7V5
C100
C110
|
PDF
|
|
74LV373PWDH
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal D-type transparent latch 3-State 74LV373 FEATURES DESCRIPTION • Wide operating voltage: t .0 to 5.5V The 74LV373 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC/HCT373.
|
OCR Scan
|
74LV373
--25ilC
74LV373
74HC/HCT373.
SVQ0fl96
74LV373PWDH
|
PDF
|