Untitled
Abstract: No abstract text available
Text: ATS WHITE PAPER Device Thermal Coupling on a PCB THERMAL MINUTES Device Thermal Coupling on a PCB 1 to 5 mm Gap Insulation to Board or Insulation to Package Junction Temperature Board Temperature Thermocouple Soldered to Middle Lead Figure 1. Cross Section
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JESD51-2,
JESD51-6,
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WEDPN8M72V-XBX
Abstract: AN0019
Text: AN0019 White Electronic Designs APPLICATION NOTE PBGA THERMAL RESISTANCE CORRELATION INTRODUCTION CALIBRATION, MEASUREMENTS AND MODELING The thermal resistances for the Plastic Ball Grid Array PBGA Multi Chip Packages (MCP) published in WEDC data sheets are results from thermal modeling software
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AN0019
WEDPN8M72V-XBX
128Mb
AN0019
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AN1232
Abstract: QFP PACKAGE thermal resistance micromechanical
Text: MOTOROLA Order this document by AN1232/D SEMICONDUCTOR TECHNICAL DATA AN1232 Thermal Performance of Plastic Ball Grid Array PBGA Packages for Next Generation FSRAM Devices Prepared by: Shailesh Mulgaonker (APDC, Phoenix, AZ) and Bennett Joiner (APDPL, Austin, TX)
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AN1232/D
AN1232
AN1232/D*
AN1232
QFP PACKAGE thermal resistance
micromechanical
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Untitled
Abstract: No abstract text available
Text: CHAPTER 5 THERMAL CONSIDERATIONS page Introduction 5-2 Part one: Thermal properties 5-2 Part two: Worked examples 5-7 Part three: Heat dissipation 5 - 15 Philips Semiconductors Discrete Semiconductor Packages Thermal considerations Chapter 5 INTRODUCTION The perfect power switch is not yet available. All power
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78L05 equivalent
Abstract: TO-92 78L05 voltage regulator pin configuration 78l12 transistor 78L12A 78l02ac 12QHz transistor 78L15a 78L06C 78L05C 78L05A
Text: FEATURES ABSOLUTE MAXIMUM RATINGS • OUTPUT CURRENT UP TO 100mA . NO EXTERNAL COMPONENTS • INTERNAL THERMAL OVERLOAD PRO TECTION . INTERNAL SHORT CIRCUIT CURRENT LIMITING • AVAILABLE IN JEDEC TO-92 ANO LOW PROFILE TO-39 PACKAGES . OUTPUT VOLTAGES OF 2.6V, 5V, 6.2V,
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100mA
78L00-AC)
78L00C)
78L05 equivalent
TO-92 78L05 voltage regulator pin configuration
78l12 transistor
78L12A
78l02ac
12QHz
transistor 78L15a
78L06C
78L05C
78L05A
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THM7023
Abstract: AN258 P432 transistor B42 350 15-20W AC00151
Text: AN258 Application note Thermal characteristics of the Pentawatt & Heptawatt packages Introduction This Application Note is aimed to give a complete thermal characterization of the Heptawatt and Pentawatt package Figure 1 . Characterization is performed according with recommendations included in the G32-86
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AN258
G32-86
THM7023
AN258
P432
transistor B42 350
15-20W
AC00151
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Untitled
Abstract: No abstract text available
Text: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package
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FDMC3020DC
FDMC3020DC
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is pr oduced using Fairchild process. Semiconductor’s advanced Power Trench® Advancements in b oth silicon and Dual CoolTM package
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FDMS86300DC
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40-gauge
Abstract: No abstract text available
Text: SECTION 4 DESIGN CONSIDERATIONS HEAT DISSIPATION An estimation of the chip junction temperature, TJ, in °C can be obtained from the equation: Equation 1: T J = T A + P D x R θJA Where: TA= ambient temperature ˚C RθJA= package junction-to-ambient thermal resistance ˚C/W
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DSP56L811
40-gauge
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UES1422
Abstract: UES1420 UES1421 UES1423
Text: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance
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0D11031
UES1420
O-220,
100kHz.
UES1422
UES1421
UES1423
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27533
Abstract: marking 37525 37525 QFN8 37530 marking 27550 MC3327DT-3
Text: MC33275, MC33375, NCV33275 Product Preview 300 mA, Low Dropout Voltage Regulator http://onsemi.com The MC33275 and MC33375 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK and QFN−8, 4x4 surface
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MC33275,
MC33375,
NCV33275
MC33275
MC33375
OT-223,
BRD8011/D.
27533
marking 37525
37525
QFN8
37530
marking 27550
MC3327DT-3
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THM7023
Abstract: LAYOUT Multiwatt P432
Text: APPLICATION NOTE THERMAL CHARACTERISTICS OF THE MULTIWATT PACKAGE By R. T IZ IANI INTRODUCTION This Application Note provides a complete thermal characterization of the Multiwatt package multilead double TO-220 - fig. 1 . Characterization is performed according with recomandations included in the G32-86 SEMI guideline,
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O-220
G32-86
THM7023
LAYOUT Multiwatt
P432
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Untitled
Abstract: No abstract text available
Text: FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package
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FDMC3020DC
FDMC3020DC
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PDF
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TO-220 package thermal resistance
Abstract: THM7023 Multiwatt st AN257 P432 LAYOUT Multiwatt AC00151
Text: AN257 Application note Thermal characteristics of the Multiwatt package Introduction This Application Note provides a complete thermal characterization of the Multiwatt package multilead double TO-220 - Figure 1 . Characterization is performed according with recommendations included in the G32-86
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AN257
O-220
G32-86
TO-220 package thermal resistance
THM7023
Multiwatt st
AN257
P432
LAYOUT Multiwatt
AC00151
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27533G
Abstract: 27550G 27525G 27530G 27550 27533 27530 marking 27550 MC33275 NCV33275
Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount packages. These devices feature a very low quiescent current and are
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MC33275,
NCV33275
MC33275
OT-223,
MC33275/D
27533G
27550G
27525G
27530G
27550
27533
27530
marking 27550
NCV33275
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FDMS2510SDC
Abstract: 10-L41B-11
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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MC33275
Abstract: No abstract text available
Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount packages. These devices feature a very low quiescent current and are
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MC33275,
NCV33275
MC33275
MC33275/D
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
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V753
Abstract: FDMS86200DC
Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86200DC
FDMS86200DC
V753
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PDF
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27525G
Abstract: 27550G MC33275
Text: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, DPAK, and DFN 4x4 surface mount packages. These devices feature a very low quiescent current and are
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MC33275,
NCV33275
MC33275
OT-223,
MC33275/D
27525G
27550G
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMC7660DC
FDMC7660DC
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PDF
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FDMS86300DC
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
FDMS86300DC
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86500DC
FDMS86500DC
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
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