A-18
Abstract: No abstract text available
Text: Index <D– Fetch<Dis mnemonic 13-15 > connection symbol 11-4, 16-3 >D– (Fetch>Dis) mnemonic 13-15 0 connection symbol 5-7 2ndWord mnemonic 13-14 2w– (2ndWord) mnemonic 13-14 32-bit counter, configuring 15-12 to 15-13 A Absolute mode 9-3, 14-17, C-1
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32-bit
XDS522A
A-18
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smd transistor HX
Abstract: Mil JAN jm38510 Cross Reference CERAMIC LEADLESS CHIP CARRIER CLCC 28 jM38510 cross index ceramic pin grid array CPGA SmD TRANSISTOR SP cdp68hc68 CERAMIC LEADLESS CHIP CARRIER dsp radiation hard smd transistor HX 45
Text: Ordering Information 14 PRODUCT TREES ANALOG Device Category Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14-2 Ordering Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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1-888-INTERSIL
smd transistor HX
Mil JAN jm38510 Cross Reference
CERAMIC LEADLESS CHIP CARRIER CLCC 28
jM38510 cross index
ceramic pin grid array CPGA
SmD TRANSISTOR SP
cdp68hc68
CERAMIC LEADLESS CHIP CARRIER
dsp radiation hard
smd transistor HX 45
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17-18 Bg
Abstract: tea 2146 MPC555 Motorola MPC555 tea 1713 quanta FG 2149 RAM 2147 RAM
Text: INDEX –A– Bit-time 14-47 BKPT TPU asserted 17-14 BLC 17-13 BOFFINT 16-31 Boundary conditions 13-16 Boundary scan cells 22-1 descriptor language 22-7 register 22-1 BPU 3-5 BQ2 13-16, 13-38 BR, 9-7 Branch prediction 3-5 processing unit 3-5 trace enable 3-21
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Index-12
MPC555
17-18 Bg
tea 2146
MPC555
Motorola MPC555
tea 1713
quanta FG
2149 RAM
2147 RAM
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Untitled
Abstract: No abstract text available
Text: NTMSD2P102LR2 Product Preview FETKY Power MOSFET and Schottky Diode Dual SO–8 Package Features • High Efficiency Components in a Single SO–8 Package • High Density Power MOSFET with Low RDS on , http://onsemi.com Schottky Diode with Low VF MOSFET
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NTMSD2P102LR2
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igfet
Abstract: k 1413 FET AU4A mos memory 1984
Text: 第２章 半導体集積回路の信頼性 本文書は全 3 章にて構成される品質保証･信頼性ハンドブックの 第 2 章-（2）の部分となります。 目次 第２章 半導体集積回路の信頼性 1. 2. 3. 4. 半導体集積回路の信頼性 .
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R-61-RS-02,
RADC-TR-68-243,
p1791941984
igfet
k 1413 FET
AU4A
mos memory 1984
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HV9100
Abstract: HV9100C HV9100P HV9100PJ HV9102 HV9102C HV9102P HV9102PJ HV9103 HV9103C
Text: HV9100 HV9102 HV9103 High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package Options Max Feedback Voltage Max Duty Cycle BVDSS RDS ON 10V 70V ± 1.0% 49% 150V 5.0Ω HV9100P HV9100C HV9100PJ 10V 120V ± 1.0% 49% 200V
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HV9100
HV9102
HV9103
HV9100P
HV9100C
HV9100PJ
HV9102P
HV9102C
HV9102PJ
HV9103P
HV9100
HV9100C
HV9100P
HV9100PJ
HV9102
HV9102C
HV9102P
HV9102PJ
HV9103
HV9103C
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bubba oscillator
Abstract: LM358 and wein bridge oscillator amplitude controlled Wien Bridge Oscillator ua709 OP AMP COOKBOOK uA709 cross reference uA709 application op amp transistor current booster circuit uA709 substitute single-supply wein bridge oscillator
Text: Op Amps For Everyone Ron Mancini, Editor in Chief Design Reference September 2001 Advanced Analog Products SLOD006A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at
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SLOD006A
bubba oscillator
LM358 and wein bridge oscillator
amplitude controlled Wien Bridge Oscillator
ua709
OP AMP COOKBOOK
uA709 cross reference
uA709 application
op amp transistor current booster circuit
uA709 substitute
single-supply wein bridge oscillator
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PC13
Abstract: S3C7515 S3P7515 SAM47
Text: PRODUCT OVERVIEW 1 S3C7515/P7515 PRODUCT OVERVIEW OVERVIEW The S3C7515/P7515 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . The S3P7515 is a microcontroller which has 16-kbyte one-time-programmable EPROM but its functions are same to S3C7515.
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S3C7515/P7515
S3C7515/P7515
SAM47
S3P7515
16-kbyte
S3C7515.
64-pin
S3C7515/P7trol
0011B.
PC13
S3C7515
SAM47
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marking 724 diode sot-363
Abstract: ultra low level FET TO-236
Text: NTTD2P02R2 Power MOSFET -2.4 Amps, -20 Volts Dual P–Channel Micro8 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro–8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTD2P02R2
marking 724 diode sot-363
ultra low level FET TO-236
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E3P03
Abstract: 369A-13
Text: NTMS3P03R2 Product Preview Power MOSFET -3.05 Amps, -30 Volts P–Channel SO–8 Features • • • • • • • http://onsemi.com High Efficiency Components in a Single SO–8 Package High Density Power MOSFET with Low RDS on Miniature SO–8 Surface Mount Package – Saves Board Space
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NTMS3P03R2
E3P03
369A-13
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Untitled
Abstract: No abstract text available
Text: MGSF2P02HD Product Preview Power MOSFET 2 Amps, 20 Volts P–Channel TSOP–6 This device represents a series of Power MOSFETs which are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low
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MGSF2P02HD
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sem 2106 inverter diagram
Abstract: induction cooker schematic diagram automatic brake failure indicator and engine heating alarm working principles of dc fan in toshiba air conditioner atm with an eye seminar report sem 2106 inverter transistor smd marking mx ODOMETER transistor 9015 c sem 2106 manual
Text: This version: Jan. 1998 Previous version: Nov. 1996 E2S0001-27-Y3 Introduction Thank you for supporting OKI Semiconductor products. In the rapidly advancing electronics industry, types of semiconductor applications are diversified, and customer demands for
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E2S0001-27-Y3
MIL-STD-883
MIL-STD-202
sem 2106 inverter diagram
induction cooker schematic diagram
automatic brake failure indicator and engine heating alarm
working principles of dc fan in toshiba air conditioner
atm with an eye seminar report
sem 2106 inverter
transistor smd marking mx
ODOMETER
transistor 9015 c
sem 2106 manual
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SG332
Abstract: ECG1645 ECG1413 ECG1545 VA00 SG232
Text: PHILIPS E C G INC ^53150 17E G005M24 b T -7 7 -0 7 -Ì3 ECG1413, ECG1545 V IF Vìdeo AGC A m p w /A F T S e m ic o n d u c to rs I6 ECG1413 fo r N PN T uner ECG1645 fo r FET Tuner i-t ri ri n 9 i-i i-i i-t .2 6 0 6 .6 0 MAX. Features • H igh gain, w id e band IF am p lifier
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G005M24
ECG1413,
ECG1545
T-77-07-Ã
ECG1413
ECG1645
81MAX.
T-77-07-13
ECG1413/Ã
CG1545
SG332
ECG1545
VA00
SG232
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D 1413 transistor
Abstract: k 1413 FET D 1414 transistor transistor a 1413 transistor K 1413
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET PHN1018 SYMBOL FEATURES QUICK REFERENCE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHN1018
PHN1018
lo100
D 1413 transistor
k 1413 FET
D 1414 transistor
transistor a 1413
transistor K 1413
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Avantek diode limiter
Abstract: k 1413 FET
Text: W hpl HEWLETT PACKARD Avantek Products Wideband Output Limiting Amplifiers 0.5 to 18.0 GHz Selection Guide LMT S eries LWT S eries F eatu res D escription C ase T ypes • GaAs FET D esign HP LMT/LWT series limiting wideband amplifiers combine the proven circuit design and thin-film
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22-inch
8033X
LWT-18036X
Avantek diode limiter
k 1413 FET
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PCCB
Abstract: 8XC196KC chapter 5 interrupts 8XC196KC/KD 8xc196kd 8XC196KC chapter 4 memory partitions intel 8216 8XC196KC a0156 8XC196KC instruction set
Text: Programming the Nonvolatile Memory 14 CHAPTER 14 PROGRAMMING THE NONVOLATILE MEMORY The 8XC196KC/KD contains One-Time-Programmable Read-Only Memory OTPROM , a version of EPROM. The 8XC196KC has 16 Kbytes at locations 2000H-5FFFH. The 8XC196KD has 32 Kbytes at locations 2000H-9FFFH. You may program the OTPROM
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8XC196KC/KD
8XC196KC
2000H-5FFFH.
8XC196KD
2000H-9FFFH.
PCCB
8XC196KC chapter 5 interrupts
8XC196KC chapter 4 memory partitions
intel 8216
a0156
8XC196KC instruction set
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230843
Abstract: intel intellec prompt 48 210997 80960 Programmer Reference manual 210918 mohawk 80960MC A-20
Text: 80960MC Programmer’s Reference Manual 1988 Order Number: 271081-001 inter LITERATURE To order Intel literature write or call: Intel Literature Sales Toll Free Number: P.O. Box 58130 800 548-4725* Santa Clara, CA 95052-8130 Use the order blank on the facing page or call our Toll Free Number listed above to order literature.
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80960MC
230843
intel intellec prompt 48
210997
80960 Programmer Reference manual
210918
mohawk
A-20
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IF9110
Abstract: No abstract text available
Text: & IRFU9110, IRFR9110 3.1 A, 100V, A valanche Rated, P-Channel E nhancem ent-M ode Pow er MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1A, 100V ■ r DS<ON SOURCE = 1-200Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve
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IRFU9110,
IRFR9110
O-251AA
1-200Q
IRFU9110
IRFR9110
39e-4
87e-5)
31e-10
1e-30
IF9110
|
cm 2038
Abstract: c23cf C10104
Text: A148-20T 2 METER VERTICAL & HORIZONTAL YAGI ANTENNA 144-148 MHz 951452 6/ 94 \ A 14 8 -2 0 T | WARNING TH IS ANTENNA IS AN ELEC T R IC A L CONDUCTOR. CONTACT W ITH POW ER I K E S CAN R E S U LT IN DEATH. O R SER IO U S INJURV. DO NOT INSTALL TH IS ANTENNA W H ERE TH ER E IS ANY P O SSIB ILITY O F CONTACT WITH OR HIGH VO LTAGE ARC-O VER FROM
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A148-20T
PL-259
PL-259.
240ne
cm 2038
c23cf
C10104
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TIL 414
Abstract: No abstract text available
Text: S u p e r t e x in c HV9100 HV9102 HV9103 . High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN MOSFET Switch Package O ptions Min Max Feedback Voltage Max Duty Cycle b v dss ^DS ON 10V 70V ± 1.0% 49% 150V 5.0Q. HV91 OOP HV9100C HV9100PJ
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HV9100
HV9102
HV9103
HV9100C
HV9100PJ
HV9102P
HV9102C
HV9102PJ
HV9103P
HV9103C
TIL 414
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V9102
Abstract: A510K N-Channel Depletion-Mode MOSFET HV9100 HV9100C HV9100PJ HV9102 HV9102P HV9102PJ HV9103
Text: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ
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HV9100
HV9102
HV9103
HV9100C
HV9100PJ
HV9102P
HV9102PJ
HV9103P
HV9103PJ
HV9100/HV9102/HV91
V9102
A510K
N-Channel Depletion-Mode MOSFET
HV9100PJ
HV9102PJ
HV9103
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V9102
Abstract: No abstract text available
Text: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ
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HV9100
HV9102
HV9103
HV9100P
HV9100C
HV9100PJ
HV9102P
HV9102PJ
HV9103P
HV9103PJ
V9102
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Untitled
Abstract: No abstract text available
Text: A/D Converters for precision and reliatbili Features' ' . ' • 6 Series,'42 Different Models ' • 8 to 14 Bit Resolution - • Temperature Compensation to 2.5ppm /°C • Conversion Times to 2pSec for 8 Bits, ; • 4pSec for 12 Bits and 12/aSec for 14 Bits.
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12/aSec
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MCF5206
Abstract: No abstract text available
Text: TABLE OF CONTENTS Paragraph Number 1.1 1.2 1.3 1.3.1 1.3.1.1 1.3.1.2 1.3.1.3 1.3.1.4 1.3.1.5 1.3.1.6 1.3.2 1.3.3 1.3.4 1.3.5 1.3.6 1.3.7 1.3.8 1.3.8.1 1.3.8.2 1.3.9 1.3.10 1.3.11 1.3.12 1.3.13 1.3.14 Title Page Number Section 1 Introduction Background. 1-1
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MCF5206
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