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    K 2056 TRANSISTOR Search Results

    K 2056 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 2056 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


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    K 2056 transistor

    Abstract: 2SK777
    Text: SANYO SEMICONDUCTOR Ï I Ë T 1 CORP 711707t 3 ? - 12. r - 2SK777 G0QSMb3 N-Channel M OS Silicon Fieid-Effect Transistor 2056 Very High Speed Switching Applications 2661 Features . Low ON résistance, very high-speed switching Absolute H a i l n Ratings at Ta=25°C


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    PDF 711707t 2SK777 IS-126 1S-126A IS-20MA IS-313 IS-313A K 2056 transistor 2SK777

    UPA76ha

    Abstract: UPA76 IC-3532 PA76HA
    Text: NEC NPN SILICON TW IN TRANSISTOR ELECTRON DEVICE MP A 7 6 H A DESCRIPTION PACKAGE DIMENSIONS The ;iiPA76HA is designed fo r use in the to p stage fo r d iffe re n tia l am plifie r o f an EQ amp. and a stereo main amp. in m illim eters inches FEATURES • Excellent pair balance


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    PDF uPA76HA J22686 RS39726 UPA76 IC-3532 PA76HA

    UPA74HA

    Abstract: PA74HA UPA74 NEC 701 K 2056 transistor IC-3530 VCE-60 N125V
    Text: NEC NPN SILICON TW IN TRANSISTOR ELECTRON DEVICE «PA74HA DESCRIPTION PACKAGE DIMENSIONS The //PA74HA is designed fo r use in the top stage for differential in m illim eters inches amplifier of an EQ amp. and astereo main amp. 3.0 MAX. 19.55 MAX FEATURES


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    PDF uPA74HA //PA74HA J22686 RS39726 --83M PA74HA UPA74 NEC 701 K 2056 transistor IC-3530 VCE-60 N125V

    2SK704

    Abstract: TRANSISTOR C 3807 C 3807 transistor tc380
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK704 The 2SK704 is N-Channel MOS Field E ffect Power Transistor PACAKGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. in m illim e t e r s in c h e s FEATURES


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    PDF 2SK704 2SK704 RS39726 1986M TRANSISTOR C 3807 C 3807 transistor tc380

    2SC2621

    Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
    Text: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current


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    PDF 2SC2621 200VtIE 0021J 2SC2621 ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a

    2SK681

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2S K 681 • Suitable fo r sw itching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • in m illim eters inches Low R Ds(on) R DS(on) = 0 -9 5 n T Y P - •


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    PDF 2SK681 RS39726 1986M 2SK681

    UPA75HA

    Abstract: Pa75ha upa75 IC353 NEC 701 UPA75H VCE-60 GE10000 k 3531 transistor transistor K 3531
    Text: NEC PNP SILICON TWIN TRANSISTOR ELECTRON DEVICE //PA75HA DESCRIPTION PACKAGE DIMENSIONS The juPA75HA is designed fo r use in the to p stage fo r differential am p lifie r o f an EQ amp. and a stereo main amp. in m illim eters inches FEATURES • Excellent pair balance


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    PDF uPA75HA J22686 --14--83M RS39726 Pa75ha upa75 IC353 NEC 701 UPA75H VCE-60 GE10000 k 3531 transistor transistor K 3531

    2SK659

    Abstract: 0118G xk30
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK659 The 2SK659 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. In m illim eters inches FEATURES • 4 V Gate Drive — Logic level —


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    PDF 2SK659 2SK659 RS39726 1986M 0118G xk30

    K 2056 transistor

    Abstract: transistor K 2056 transistor T K 2056
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 SC 2056 is a silicon N PN epitaxial planar type transistor designed for R F power amplifiers in V H F band portable or hand-held radio applications. D im e nsions in mm


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    PDF 2SC2056 K 2056 transistor transistor K 2056 transistor T K 2056

    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


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    PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79

    2SK686

    Abstract: ODDS445 t37h
    Text: SANYO SEMICONDUCTOR 15E D I CORP T-3^-|/ 2SK686 N-Channel M O S Silicon Field-Effect Transistor 2052A <£&m 7 cH7G7ti~ DODS441 High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute H a x l M Ratings at Ta=25°C


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    PDF 2SK686 0DGB752 ODDS445 t37h

    a 1757 transistor

    Abstract: ti 8ak JIS G3141 2SC1755 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo
    Text: SANYO SEMICONDUCTOR 1EE CORP D I 7^707^ □ □ □ 4 1 4 5 5 | T - Z Z - O V 1756 , 1757 2010A 2013 2012 NPN Triple Diffused Planar Silico n Transistors TV Chroma Output, Video Output, Sound Output Applications 4290 These 2SC1755,1756,1757 are different only from their packages.


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    PDF ODDH14S T-zz-07 2SC1755 0DGB752 a 1757 transistor ti 8ak JIS G3141 2SC1756 2SC1757 transistors a 1757 a 1201 sanyo

    2sd823

    Abstract: case outline
    Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage


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    PDF T707b 2SD823 IS-20MA IS-313 IS-313A 2sd823 case outline

    2SA1210

    Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
    Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage


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    PDF 2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor

    2SC693

    Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
    Text: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0


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    PDF 2SC693 D414D 0DGB752 2SC693 sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A

    2SK73

    Abstract: 2sk736
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK736 The 2SK736 is N-Channel MOS Field E ffect Power Transistor PACKAG E DIM EN SIO N S designed fo r solenoid, m o to r and lamp driver. in millimeters inches FEATUR ES • Gate Drive — Logic level —


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    PDF 2SK736 RS39726 1986M 2SK73

    2SC3174

    Abstract: DDGM314
    Text: SANYO SEMICONDUCTOR CORP 12E D I 2SC3174 T - 33-1 NPN Epitaxial Planar Silicon Transistor aoioA 1310B 7117071= DGG4313 C R T Display Horizontal Deflection Output Applications with Damper Diode Features: • High switching speed • Especially suited for use in high-definition CRT display(Vcc=6 to 12V)


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    PDF 2SC3174 1310B 0DGB752 DDGM314

    2sc284

    Abstract: 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn
    Text: 12E D I SANYO SEMICONDUCTOR CORP i 2SC2840 T - 3 7 W 0 '? b / - / S 0004103 ' N P N Epitaxial Planar S ilicon Transistor 2033 High Frequency GeneralPurpose Amp Applications 796C Features . FBET series. . Compact package enabling compactness of sets. High f T and small cre f T =600MHz typ, cre=0.5pF typ .


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    PDF 2SC2840 711707t 600MHz 0DGB752 2sc284 2SC2840 TRANSISTOR sanyo marking 2sc2999 2SC2999 10mmiS sanyo 2033 bc 207 npn

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage


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    PDF BU508D IS-20MA IS-313 IS-313A

    b1181

    Abstract: 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 2SD1914 DDD3710 IC 2453 FSIM
    Text: SANYO SEMICONDUCTOR CORP 2SD1914 NPN Epitaxial Planar Silico n Darlington Transistor 204 3 A - Driver Applications . 2453 Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . Darlington connection . High DC current gain


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    PDF 2SD1914 B1181 B1252 2043A TRANSISTOR b1181 transistor 9-t b1252 TRANSISTOR darlington fp 1016 DDD3710 IC 2453 FSIM

    2SK785

    Abstract: TC3822 NEC 701
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK785 The 2SK785 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES in m illim eters inches • Suitable fo r switching power supplies, actuater controls, and


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    PDF 2SK785 2SK785 RS39726 oIa522an4192, TC3822 NEC 701

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 15E D I ? n 7 G7 b 0 DQ4 3 4 Ö fl T-Z0-2f\ 2SC3294 201OA NPN Planar Silicon Darlington Transistor Driver Applications 1422A Duo . Switching of L load motor driver, printer hammer driver, relay driver Features . High DC current gain.


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    PDF 2SC3294 201OA IS-20MA IS-313 IS-313A IS-126 Q0D37S1

    C1571 transistor

    Abstract: transistor c1570 transistor c1571 c1570 2SC1571 2SC1571L b1252 TRANSISTOR ic sj 2038 sj 2025 sj 2038
    Text: SANYO S E M C O N t U C T O R CORP 70, 1571, 1571L 15E » I 7Ti707ti O O D k m e T - ï n - i 2003A NPN Epitaxial Planar Silicon Transistors Very Low Noise Amp Applications 431D . The 2SC1570, 1571» 1571L are developed as very low-noise transistors and are


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    PDF 2SC1570, 1571L 2SC1570 2SC1571 2SC1571L B1181 B1252 C1571 transistor transistor c1570 transistor c1571 c1570 b1252 TRANSISTOR ic sj 2038 sj 2025 sj 2038