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    K 246 TRANSISTOR FET Search Results

    K 246 TRANSISTOR FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    K 246 TRANSISTOR FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    OCR Scan     		RD00HVS1 175MHz RD00HVS1 175MHz 25deg PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		BF998WR OT343R PDF

    2SK3900

    Abstract: nec 41-A D1717 2SK3900-ZP MP-25ZP
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3900-ZP TO-263 MP-25ZP


    Original     		2SK3900 2SK3900 2SK3900-ZP O-263 MP-25ZP) O-263) nec 41-A D1717 2SK3900-ZP MP-25ZP PDF

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


    OCR Scan     		2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460 PDF

    BF966

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		bbS3T31 aQ12c BF966 BF966 PDF

    NT 407 F MOSFET TRANSISTOR

    Abstract: MTP8N50E TMOS E-FET
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without


    Original     		MTP8N50E/D MTP8N50E NT 407 F MOSFET TRANSISTOR MTP8N50E TMOS E-FET PDF

    transistor MOSFET 924 ON

    Abstract: 4892 mosfet 4892 4891 TRANSISTOR AN569 MTP60N06HD
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet HDTM O S E -FE T ™ P o w er Field E ffe c t T ran s is to r MTP60N06HD Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS RDS on = 0.014 OHM


    OCR Scan     		MTP60N06HD transistor MOSFET 924 ON 4892 mosfet 4892 4891 TRANSISTOR AN569 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n


    OCR Scan     		MTP8N50E/D TP8N50E PDF

    2SK659

    Abstract: TC-6071
    Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #


    OCR Scan     		2SK659 2SK659Ã 2SK659 TC-6071 PDF

    f4316

    Abstract: F4319F MGF4319F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


    OCR Scan     		F4310F F4316F F4319F f4316 F4319F MGF4319F PDF

    k 246 transistor fet

    Abstract: tp60n06 tp60n06hd ny transistor mosfet
    Text: MOTOROLA O rder this docum ent by M TP60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP60N06HD HDTMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced h ig h -c e ll density HDTMOS pow er FET is


    OCR Scan     		TP60N06HD/D MTP60N06HD/D k 246 transistor fet tp60n06 tp60n06hd ny transistor mosfet PDF

    TC-5854

    Abstract: 2SK479
    Text: NEC m M O S Field E ffe c t P o w e r T ra n s is to r * = r i\ r x 2SK479 N f - t i ' ^ ' 7 -M O S FET x if f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use > M ^ ”7 - M 0 S F E T T t > t & 2SK479i±, ^ ^ H / P A C K A G E DIMENSIONS


    OCR Scan     		2SK479 2SK479Ã Cycled50 TC-5854 2SK479 PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    k 246 transistor fet

    Abstract: No abstract text available
    Text: BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 — 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.


    Original     		BUK9518-55A; BUK9618-55A BUK9518-55A O-220AB) BUK9618-55A OT404 OT404, k 246 transistor fet PDF

    RM4T

    Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
    Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ


    OCR Scan     		2SK800 2SK800Ã RM4T r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22 PDF

    8010c

    Abstract: EUP8010D TDFN-10 8010-D EUP8010C-JIR1 EUP8010A-JIR1 EUP8010B-JIR1 EUP8010X EUP8010B 200A battery charger
    Text: EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,


    Original     		EUP8010X EUP8010X automatical10X DS8010X TDFN-10 8010c EUP8010D TDFN-10 8010-D EUP8010C-JIR1 EUP8010A-JIR1 EUP8010B-JIR1 EUP8010B 200A battery charger PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    Original     		OT-143 Q62703-F97 P-SOT143-4-1 GPS05559 PDF

    k 246 transistor fet

    Abstract: transistor motorola 246 6v 100 ohm role AN569 MTP60N06HD transistor MOSFET 924 ON
    Text: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS


    Original     		MTP60N06HD/D MTP60N06HD MTP60N06HD/D* k 246 transistor fet transistor motorola 246 6v 100 ohm role AN569 MTP60N06HD transistor MOSFET 924 ON PDF

    transistor MOSFET 924 ON

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. Power Field Effect Transistor Designer's MTP60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 60 VOLTS


    Original     		MTP60N06HD/D MTP60N06HD MTP60N06HD/D* transistor MOSFET 924 ON PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS on = 0.014 OHM


    OCR Scan     		TB60N06HD/D MTB60N06HD design1982. 418B-02 PDF

    TDFN-10

    Abstract: 8010b EUP8010A-JIR1 EUP8010B-JIR1 EUP8010C-JIR1 EUP8010X 8010c
    Text: 芯美电子 EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,


    Original     		EUP8010X EUP8010X DS8010X TDFN-10 TDFN-10 8010b EUP8010A-JIR1 EUP8010B-JIR1 EUP8010C-JIR1 8010c PDF

    JI32

    Abstract: 2SK482 T460 t460 transistor diode sg 5 ts
    Text: NEC m ^ T Y = 7 > i > 7 * MOS f v r x Field Effect P ow er Transistor _ 2SK482 FET n im m N-Channel MOS Field E ffect P ow er T ra n s is to r Sw itching Industrial Use 2SK482ii, tfjIiEfcCON-f-v —MOS FET"C, Xj -yj - fl-J & l*]/P A C K A G E DIM ENSIO NS


    OCR Scan     		2SK482 2SK482Ã JI32 2SK482 T460 t460 transistor diode sg 5 ts PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK9618-55A N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK9618-55A PDF

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


    OCR Scan     		r88uct RFA120 mu24 dc SWT-2 PDF