K 351 TRANSISTOR Search Results

K 351 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

K 351 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
49nF Abstract: No abstract text available Text: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics	OCR Scan	O-218AC 49nF	PDF
IC 351 Abstract: CIL351 CIL352 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	C-120 CIL351 Rev060901 IC 351 CIL352	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO	Original	C-120 CIL351 Rev060901	PDF
CIL351 Abstract: CIL352 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO	Original	C-120 CIL351 Rev060901 CIL352	PDF
diode sy 345 Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337 Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a \|r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989	OCR Scan	III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337	PDF
Untitled Abstract: No abstract text available Text: DTC124XK NPN Digital Transistor -I 1 U with built-in bias resistor. This allows inverter circuit con figuration without external resistors for input. - 3 - 0 .1 5 - The pin configuration is the following: 1 = Collector/OUT 1 .8+0-2 i 2 = Base/IN 3 = Emitter/GND	OCR Scan	DTC124XK O-236	PDF
npntransistor Abstract: BFX62 Text: BFX 62 Nicht für N euentw icklung N P N -Transisto r für regelbare V erstärker und O szillatorstufen bis 1 G H z B FX 62 ist ein NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A4 DIN 41 876 TO -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert.	OCR Scan	BFX62 Q60206-X62 npntransistor	PDF
Untitled Abstract: No abstract text available Text: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.	OCR Scan	bb53T31 BF536 001570b T-31-15	PDF
transistor 373 Abstract: 8060 transistor Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe	OCR Scan	8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor	PDF
MRA0610-40A Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A MRA0610-40A IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor	PDF
MRA transistor Abstract: No abstract text available Text: 0610-09 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-09 is Designed for Class C, Common Base Applications in the 600 MHz to 1000 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting PACKAGE STYLE MRA .25	Original		PDF
MRA0610-18A Abstract: MRA transistor Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A MRA0610-18A MRA transistor	PDF
Untitled Abstract: No abstract text available Text: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.	Original	MRA0610-18A 610-18A	PDF
k 351 transistor Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR Text: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.	OCR Scan	bbS3T31 0Q1S70M BF536 00157Gb T-31-15 k 351 transistor MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR	PDF

VEB mikroelektronik Abstract: E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D Text: ^ o n ij- c B ip o la r e reise Bipolare digitale Schaltkreise Dekoder, Treiber, Timer Inhaltsverzeichnis Seite Typenübersicht 5 Kurzzeichenübersicht 6 Technische Erläuterungen 7 - Zuverlässigkeit 8 - Definitionen 9 - G renz- und Betriebswerte 12 - Einbau- und Lötvorschriften	OCR Scan	D4501X1 VEB mikroelektronik E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D	PDF
0550E Abstract: No abstract text available Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT455 ISSUE 1 - SEPT 93_ FEATURES * 140 Volt VCE0 * 1 Am p continuous current * Ptot= 1 Watt REFER TO ZTX455 FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage	OCR Scan	ZTX455 100nA, CICI7DS76 GG1D354 117DS7Ã 001G35S 0550E	PDF
smd rgs Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B Text: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2	Original	KUK7607-55B O-263 smd rgs ld smd transistor smd 2U SMD Transistor nc KUK7607-55B	PDF
lc 3101 Abstract: k 351 transistor 2sd darlington L001 transistor Mu Text: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and	OCR Scan	2SD1889 O-220FP SC-67) 2SB1340 O-220FP) 300fl 800/iA 2SD1889 lc 3101 k 351 transistor 2sd darlington L001 transistor Mu	PDF
14d 431K varistor Abstract: 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k Text: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V	Original	UL1414 E197475 UL1449 E326004 14d 431K varistor 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor BUZ 70 L • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS Id ^DS on Package 1> Ordering Code BUZ 70 L 60 V 12 A 0.15 Q TO-220 AB C67078-S1325-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 "C	OCR Scan	O-220 C67078-S1325-A2	PDF
Untitled Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors DTA143ZE/DTA143ZU A/DTA143ZKA/DTA143ZSA •Structure PNP digital transistor (with built-in resistors) •External dimensions (Units: mm) DTA143ZE 1 .6 + 0-2 1 0 1 0 ': n tæ 9+0.1 r C .7±0.1 I— 5+0.1	OCR Scan	DTA143ZE/DTA143ZU /DTA143ZKA/DTA143ZSA DTA143ZKA DTA143ZE DTA143ZE DTA143ZUA DTA143ZKA DTA143ZSA DTA143ZE/DTA143ZUA/DTA143ZKA/DTA143ZSA -50m-100m	PDF
MJ11032 Abstract: MJ110xx MJ11028-29 Transistor power amp transistors mj11033 TRANSISTOR MJ11028 and/transistor MJ11032 Text: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •	Original	MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 MJ11032 MJ110xx MJ11028-29 Transistor power amp transistors TRANSISTOR MJ11028 and/transistor MJ11032	PDF
NEC k 2134 transistor Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm	OCR Scan	NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584	PDF
BFY 34 transistor Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV Text: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.	OCR Scan	BFY33, BFY34 BFY46 Q60206-Y33 Q60206-Y34 Q60206-Y46 BFY34, BFY 34 transistor transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV	PDF

K 351 TRANSISTOR Search Results

K 351 TRANSISTOR Result Highlights (5)

K 351 TRANSISTOR Datasheets Context Search

49nF

IC 351

Untitled

CIL351

diode sy 345

Untitled

npntransistor

Untitled

transistor 373

MRA0610-40A

MRA transistor

MRA0610-18A

Untitled

k 351 transistor

VEB mikroelektronik

0550E

smd rgs

lc 3101

14d 431K varistor

Untitled

Untitled

MJ11032

NEC k 2134 transistor

BFY 34 transistor