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    K 3569 7.G EQUIVALENT Search Results

    K 3569 7.G EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    K 3569 7.G EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MHW1244

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		MHW1244/D MHW1244 MHW1244/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		MHW1244/D MHW1244 MHW1244/D PDF

    MHW1224

    Abstract: XM26
    Text: MOTOROLA Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and


    Original     		MHW1224/D MHW1224 MHW1224 XM26 PDF

    MHW1244

    Abstract: DEVICE T76
    Text: MOTOROLA Order this document by MHW1244/D SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1244 CATV Amplifier Module Features • • • • Specified for 12–, 22– and 26–Channel Loading Excellent Distortion Performance Superior Gain, Return Loss and DC Current Stability over Temperature


    Original     		MHW1244/D MHW1244 MHW1244 DEVICE T76 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order this document by MHW1224/D SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. The RF Line MHW1224 Low Distortion Wideband Amplifier Designed specifically for broadband applications requiring low distortion


    Original     		MHW1224/D MHW1224 MHW1224/D PDF

    MRF373A

    Abstract: MRF373ALSR1 MRF373AR1 MRF373AS 845MHz
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		MRF373A/D MRF373AR1 MRF373ALSR1 MRF373A MRF373ALSR1 MRF373AS 845MHz PDF

    MRF373A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF373A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF373A/D MRF373A MRF373AS PDF

    zo 405 mf

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 zo 405 mf PDF

    H6050

    Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		MRF18090B/D MRF18090B MRF18090BS H6050 Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805 PDF

    smd transistor wb1

    Abstract: wb1 sot package sot-23
    Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		MRF18090A/D MRF18090A MRF18090AS smd transistor wb1 wb1 sot package sot-23 PDF

    J5-18

    Abstract: MRF18085A
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 J5-18 PDF

    Motorola transistors M 724

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724 PDF

    MRF18030A

    Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF18030A/D MRF18030AR3 MRF18030ASR3 MRF18030A 2019 gain 400S MRF18030ASR3 1003 c2 J1022 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D PDF

    400S

    Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 MRF18030A/D PDF

    IRL 724 N

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		MRF18030A/D MRF18030A MRF18030AR3 MRF18030AS MRF18030ASR3 IRL 724 N PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband


    Original     		MRF6522 MRF6522-70 MRF6522-70R3 PDF

    smd mosfet z8

    Abstract: smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS irl 1310 SMD TRANSISTORS AAA
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		MRF18090B/D MRF18090B MRF18090BS MRF18090B smd mosfet z8 smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090BS irl 1310 SMD TRANSISTORS AAA PDF

    transistor smd z9

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from


    Original     		MRF18090B/D MRF18090B MRF18090BS MRF18090B/D transistor smd z9 PDF

    VARIABLE capacitor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices


    Original     		MRF20060R/D MRF20060R MRF20060RS VARIABLE capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts


    Original     		MRF20060R/D MRF20060R MRF20060RS MRF20060R PDF

    MRF18085A

    Abstract: GSM1800 MRF18085ALSR3 MRF18085AR3 MRF18085ALS
    Text: MOTOROLA Order this document by MRF18085A/D SEMICONDUCTOR TECHNICAL DATA MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3 The RF MOSFET Line Designed for GSM and GSM EDGE base station applications with


    Original     		MRF18085A/D MRF18085A MRF18085AR3 MRF18085ALSR3 MRF18085A MRF18085AR3 GSM1800 MRF18085ALSR3 MRF18085ALS PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18085B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		MRF18085B/D 1930t MRF18085B MRF18085BR3 MRF18085BLSR3 MRF18085B/D PDF