smd 2U 75 diode
Abstract: IR3081A IR3086A IR3086AM IR3086AMTR IR3088 K 3850 N Mosfet Power
Text: IR3086A DATA SHEET XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086A Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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IR3086A
IR3086A
32oC/W,
smd 2U 75 diode
IR3081A
IR3086AM
IR3086AMTR
IR3088
K 3850 N Mosfet Power
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Untitled
Abstract: No abstract text available
Text: IR3086APBF DATA SHEET XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086A Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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IR3086APBF
IR3086A
32oC/W,
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IR3081A
Abstract: IR3086A IR3086AMPBF IR3086AMTRPBF IR3088
Text: Data Sheet No. PD94711 IR3086APbF XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086A Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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PD94711
IR3086APbF
IR3086A
32oC/W,
IR3081A
IR3086AMPBF
IR3086AMTRPBF
IR3088
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IR3081A
Abstract: IR3087 IR3087M IR3087MTR IR3088A
Text: IR3087 DATA SHEET XPHASETM PHASE IC WITH OPTI-PHASETM, OVP, AND OVERTEMP DETECT DESCRIPTION The IR3087 Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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IR3087
IR3087
32oC/W,
IR3081A
IR3087M
IR3087MTR
IR3088A
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IR3081A
Abstract: IR3086A IR3088 52nF
Text: DATA SHEET NO. PD94711 IR3086APbF XPHASETM PHASE IC WITH OVP, FAULT AND OVERTEMP DETECT DESCRIPTION The IR3086APbF Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC
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PD94711
IR3086APbF
IR3086APbF
32oC/W,
IR3081A
IR3086A
IR3088
52nF
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IR3081A
Abstract: IR3088A IR3088AM IR3088AMTR
Text: IR3088APbF DATA SHEET XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION TM The IR3088A Phase IC combined with an IR XPhase Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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IR3088APbF
IR3088A
IR3081A
IR3088AM
IR3088AMTR
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IR3081A
Abstract: IR3088A 3088A smd 2U 93
Text: Data Sheet No. PD94704 IR3088APbF XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION The IR3088A Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC provides
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PD94704
IR3088APbF
IR3088A
32oC/W,
IR3081A
3088A
smd 2U 93
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IR3081
Abstract: IR3088 IR3088A
Text: DATA SHEET No.94704 IR3088APbF XPHASETM PHASE IC WITH FAULT AND OVERTEMP DETECT DESCRIPTION The IR3088APbF Phase IC combined with an IR XPhaseTM Control IC provides a full featured and flexible way to implement power solutions for the latest high performance CPUs and ASICs. The “Control” IC
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IR3088APbF
IR3088APbF
32oC/W,
IR3081
IR3088
IR3088A
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6x fet
Abstract: NUS1204MN NCP304 battery charger NCP304 NUS1204MNT1G 100 6x DIODE 47-25 l
Text: NUS1204MN Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining the NCP304 overvoltage protection circuit OVP with a −12 V P−Channel power MOSFET. It is specifically designed to protect sensitive electronic circuitry from overvoltage transients and
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NUS1204MN
NCP304
NUS1204MN/D
6x fet
NUS1204MN
NCP304 battery charger
NUS1204MNT1G
100 6x
DIODE 47-25 l
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6N40
Abstract: 351 D-PAK
Text: NTD6N40 Preferred Device Power MOSFET 6 Amps, 400 Volts N−Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •
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NTD6N40
NTD6N40/D
6N40
351 D-PAK
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Untitled
Abstract: No abstract text available
Text: NTLUF4189NZ Power MOSFET and Schottky Diode 30 V, N−Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm mCoolt Package Features • • • • • • http://onsemi.com Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN 1.6x1.6 mm for Board Space Saving
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NTLUF4189NZ
NTLUF4189NZ/D
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Untitled
Abstract: No abstract text available
Text: S G S -1H 0M S 0N IMOigœiILliera *® STB50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE STB50NE08 V dss R D S on Id 80 V < 0 .0 2 4 Q. 50 A . . TYPICAL RDS(on) =0.020 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STB50NE08
O-263
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driver 3110a
Abstract: 3110a ADP3110AKRZ SOIC-8 mosfet 3110a MOSFET SO-8 ADP3110A NCP5381 NTD60N03
Text: ADP3110A Dual Bootstrapped, 12 V MOSFET Driver with Output Disable The ADP3110A is a single Phase 12 V MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 25 ns
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ADP3110A
ADP3110A
ADP3110A/D
driver 3110a
3110a
ADP3110AKRZ
SOIC-8 mosfet 3110a
MOSFET SO-8
NCP5381
NTD60N03
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP50NE08 V d ss R d S ( o ii ) Id 80 V < 0 .0 2 4 Q. 50 A . TYPICAL RDS(on) =0.020 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STP50NE08
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n3488
Abstract: n3488 IC IC n3488 NCP3488DR2G NCP3488 NCP5388 NTD60N03 smd diode marking AH
Text: NCP3488 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3488 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and
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NCP3488
NCP3488
NCP3488/D
n3488
n3488 IC
IC n3488
NCP3488DR2G
NCP5388
NTD60N03
smd diode marking AH
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n3488
Abstract: NCP5388 NCP3488
Text: NCP3488 MOSFET Driver with Dual Outputs for Synchronous Buck Converters The NCP3488 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and
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NCP3488
NCP3488
NCP3488/D
n3488
NCP5388
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NCP6131
Abstract: No abstract text available
Text: NCP81051 IMVP7.0 Compatible Synchronous Buck MOSFET Driver The NCP81051 is a high performance dual MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. It can drive up to 3 nF load with a 25 ns propagation delay and 20 ns transition time.
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NCP81051
NCP81051
506AA
NCP81051/D
NCP6131
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F9N05
Abstract: NIF9N05CL NIF9N05CLT1 NIF9N05CLT3
Text: NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • • •
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NIF9N05CL
OT-223
NIF9N05CL/D
F9N05
NIF9N05CL
NIF9N05CLT1
NIF9N05CLT3
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ADP3418
Abstract: NCP3418 NCP3418A NCP3418ADR2 NCP3418ADR2G NCP3418D NCP3418DR2 NCP3418PDR2 mosfet so8 smd dual high side MOSFET driver with charge pump
Text: NCP3418, NCP3418A Dual Bootstrapped 12 V MOSFET Driver with Output Disable The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. Each of the drivers is
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NCP3418,
NCP3418A
NCP3418
NCP3418A
NCP3418/D
ADP3418
NCP3418ADR2
NCP3418ADR2G
NCP3418D
NCP3418DR2
NCP3418PDR2
mosfet so8 smd
dual high side MOSFET driver with charge pump
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5359a
Abstract: JESD78 NCP3418B NCP5359ADR2G NCP5359AMNR2G NCP5359AMNTBG NCP5392
Text: NCP5359A Gate Driver for Notebook Power Systems http://onsemi.com MARKING DIAGRAMS 8 SOIC−8 D SUFFIX CASE 751 8 1 • • • • • • • • • • Faster Rise and Fall Times Thermal Shutdown Protection Adaptive Nonoverlap Circuit Floating Top Driver Accommodates Boost Voltages of up to 30 V
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NCP5359A
506AA
NCP5359A/D
5359a
JESD78
NCP3418B
NCP5359ADR2G
NCP5359AMNR2G
NCP5359AMNTBG
NCP5392
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NTLJD2105L
Abstract: NTLJD2105LTBG
Text: NTLJD2105L POWER MOSFET 8 V, 4.3 A, mCool] High Side Load Switch with Level Shift, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent • • • • • • • Thermal Performance Low RDS on P−Channel Load Switch with N−channel MOSFET for
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NTLJD2105L
NTLJD2105L/D
NTLJD2105L
NTLJD2105LTBG
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m104 mosfet
Abstract: AND8174 1N4148 BAS16LT1 C101 NIS110N02 NIS6111 NIS6201 NTD011N02 NTD110N02
Text: AND8174/D NIS6111 Better ORing Diode Operation Notes Prepared by: Ryan Liu ON Semiconductor http://onsemi.com APPLICATION NOTE General Description NIS6111 Simplified Block Diagram The NIS6111 is a simple and reliable device consisting of an integrated control IC with a low RDS on power MOSFET,
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AND8174/D
NIS6111
m104 mosfet
AND8174
1N4148
BAS16LT1
C101
NIS110N02
NIS6201
NTD011N02
NTD110N02
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NTS4101PT1G
Abstract: NTS4101P NTS4101PT1 6210A
Text: NTS4101P Power MOSFET −20 V, −1.37 A, Single P−Channel, SC−70 Features • • • • Leading −20 V Trench for Low RDS on −2.5 V Rated for Low Voltage Gate Drive SC−70 Surface Mount for Small Footprint (2x2 mm) Pb−Free Package is Available
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NTS4101P
SC-70
SC-70
NTS4101P/D
NTS4101PT1G
NTS4101P
NTS4101PT1
6210A
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FET MARKING CODE
Abstract: NTHD4N02FT1 FET MARKING
Text: NTHD4N02FT1 Advance Information N-Channel 20 V Power MOSFET Schottky 1.0 A Barrier Rectifier ChipFETt Package http://onsemi.com Features • New Leadless, ChipFET Package Increases Temperature Dissipation • Increased RDS on Performance • Ultra Low VF
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NTHD4N02FT1
r14525
NTHD5904T1/D
FET MARKING CODE
NTHD4N02FT1
FET MARKING
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