K 49 TRANSISTOR Search Results

K 49 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

K 49 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
we77 Abstract: Pepperl Fuchs 407 transistor pepperl 8002 amplifier JUMO jumo pressure pneumatic arm DIN Pressure Gauges THREAD Text: M. K. JUCHHEIM GmbH & Co JUMO Instrument Co. Ltd. JUMO PROCESS CONTROL INC. Delivery address:Mackenrodtstraße 14, 36039 Fulda, Germany Postal address: 36035 Fulda, Germany Phone: +49 0 661 60 03-7 25 Fax: +49 (0) 661 60 03-6 81 E-Mail: [email protected] Internet:	Original	1-800-554-JUMO 600bays WE77/Ex. we77 Pepperl Fuchs 407 transistor pepperl 8002 amplifier JUMO jumo pressure pneumatic arm DIN Pressure Gauges THREAD	PDF
d1684 Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249	OCR Scan	2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460	PDF
marking 705 Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at	Original	FCX705 OT223 marking 705 Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NOT RECOMMENDED FOR NEW DESIGN NE64500 NE64535 NE64587 FEATURES DESCRIPTION • HIGH fT The NE645 series of NPN silicon transistors is designed for low-noise amplifier and medium power oscillator applications. The NE645 series employs a new NEC proprietary fabrication	OCR Scan	NE64500 NE64535 NE64587 NE645 MIL-S-19500 MIL-STD-750. GH000 IS12I NE64500,	PDF
Q62702-C1853 Abstract: marking BCV Q62702-C1832 ic bcv 50 Q62702C1832 Text: NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications ● High collector current ● High current gain ● Complementary types: BCV 28, BCV 48 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCV 29	Original	Q62702-C1853 Q62702-C1832 OT-89 Q62702-C1853 marking BCV Q62702-C1832 ic bcv 50 Q62702C1832	PDF
2222 kn a Abstract: 175B BLF277 c17f Text: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability	OCR Scan	T-37-Ã BLF277 711002b OT119 2222 kn a 175B BLF277 c17f	PDF
sot-89 marking BES Abstract: CE030 Text: SIEMENS NPN Silicon Darlington Transistors • • • • BCV 29 BCV 49 For general AF applications High collector current High current gain Complementary types: BCV 28, BCV 48 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1)	OCR Scan	Q62702-C1853 Q62702-C1832 OT-89 CHP00319 BCV49 sot-89 marking BES CE030	PDF
IXBH28N170 Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 60 A VCE sat = 3.5 V IXBH 28N170 IXBT 28N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	28N170 28N170 O-268 O-247 728B1 123B1 065B1 IXBH28N170	PDF
18-12 049 transistor Abstract: k 1094 transistor NE94432 0DD25 SIS 1124 Text: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:	OCR Scan	b427Mm NE94432 NE94432 18-12 049 transistor k 1094 transistor 0DD25 SIS 1124	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF
SOT 23 AJW Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332 Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA	Original	AT-41532 OT-323 SC-70) 5965-6167E SOT 23 AJW transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332	PDF
NE24600 Abstract: NE24620 2SC2952 2SC2953 NE24615 Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :	OCR Scan	tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953	PDF
Untitled Abstract: No abstract text available Text: Discrete POWER & Signal Technologies National Semiconductor Surface Mount Transistors NPN General Purpose Amplifiers and Switches Device No. SOT-23 Mark MMBT100 (N1) MMBT100A (N1A) Case Style TO-236 (49) TO-236 (49) (V) Min (V) Min (V) Min 75 45 6 75 45	OCR Scan	OT-23 MMBT100 MMBT100A O-236 MMBTA05 MMBT5551 MMBT2222	PDF
Untitled Abstract: No abstract text available Text: Date:- 6 May, 2014 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C	Original	T0900DF65A T0900DF65A	PDF

FMMT493ATA Abstract: No abstract text available Text: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring	Original	FMMT493A 250mA FMMT493ATA FMMT493ATC FMMT452) 522-FMMT493ATA FMMT493ATA	PDF
BFW92 Abstract: No abstract text available Text: Tem ic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92 Marking: BFW92	OCR Scan	BFW92 BFW92 D-74025 31-Oct-97	PDF
TRANSISTOR BH RW Abstract: Opto-Sensor reflective Opto-Sensor GE opto detector Text: Temic C NY7 0 S e m i c o n d u c t o r s Reflective Optosensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using	OCR Scan	CNY70 D-74025 12-Dec-97 TRANSISTOR BH RW Opto-Sensor reflective Opto-Sensor GE opto detector	PDF
Untitled Abstract: No abstract text available Text: A art. no. 17,8 22 K/W 1 20 B 45 7 9,8 9 18 Ø 3,6 Heatsinks for transistors in plastic case TO 220 FK 227 SA L 1 4,3 art. no. C 1 Ø 3,7 36,6 9,5 45 18 12 K/W 20 TO 220 FK 238 SA L 1 material: aluminium surface: black anodised 12,2 10,2 4 19,3 art. no. D	Original		PDF
NEC 41-A 002 Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for	OCR Scan	b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353	PDF
transistor TT 2146 Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256 Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA	Original	AT-32032 OT-323 SC-70) SC-70 OT-323) 5965-6216E transistor TT 2146 AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256	PDF
MRF2947RA Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML Text: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high	Original	MRF2947/D MRF2947AT1 MRF2947RAT1 MRF2947 MRF2947 MRF2947RA microlab SC-70ML	PDF
Untitled Abstract: No abstract text available Text: HEULETT-PACKAR»/ CPIPNTS blE D warn HEWLETT • H4H7SA4 OOOTflbl bSb B H P A AT-60570 PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Features 70 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz	OCR Scan	AT-60570	PDF
2SA800 Abstract: NE59300 NE59335 ci 4081 NE AND micro-X NE593 NE59312 NE59333 NE734 C-48Hrs Text: N E C / DE bMS7414 30 C A L IF O R N IA 64 27 41 4 N E C/ CAL IFO RNIA DODQISB 0 \|~~ 30C 00 15 3 07^3/-/*^ MICROWAVE TRANSISTOR SERIES FEATURES DESCRIPTION AND APPLICATIONS T he N E 5 9 3 Series of PNP silicon general purpose U H F tran sistors provide the designer w ith a wide selection of reliable	OCR Scan	bMS7414 NE734 Ta-25 NE593 NE59300) NE59335 NE59333. 2SA800 NE59300 ci 4081 NE AND micro-X NE59312 NE59333 NE734 C-48Hrs	PDF
BPW 64 photo Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package	OCR Scan	BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na	PDF

K 49 TRANSISTOR Search Results

K 49 TRANSISTOR Result Highlights (5)

K 49 TRANSISTOR Datasheets Context Search

we77

d1684

marking 705

Untitled

Q62702-C1853

2222 kn a

sot-89 marking BES

IXBH28N170

18-12 049 transistor

BUZ MOSFET

SOT 23 AJW

NE24600

Untitled

Untitled

FMMT493ATA

BFW92

TRANSISTOR BH RW

Untitled

NEC 41-A 002

transistor TT 2146

MRF2947RA

Untitled

2SA800

BPW 64 photo