Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K BAND LOW PHASE GAAS FET Search Results

    K BAND LOW PHASE GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67S141AFTG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=84/Iout(A)=3/Phase Interface Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation

    K BAND LOW PHASE GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE71300

    Abstract: NE71300L NE71300M NE71300N 0460 lg 8838
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE DESCRIPTION


    Original     		PDF NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour NE71300L NE71300M NE71300N 0460 lg 8838

    73E-12

    Abstract: 20771 NE71300 NE71300L NE71300M NE71300N lg 8838 LS 7642
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 3 24 • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz 2.5 21 Noise Figure, NF dB • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE


    Original     		PDF NE71300 NE71300 6e-12 15e-12 5e-12 04e-12 24-Hour 73E-12 20771 NE71300L NE71300M NE71300N lg 8838 LS 7642

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    l8113

    Abstract: integrated switch negative voltage generator 100Nf Pins l8113
    Text: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a


    Original     		PDF L8113 L8113 QW-R123-002 integrated switch negative voltage generator 100Nf Pins l8113

    Untitled

    Abstract: No abstract text available
    Text: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a


    Original     		PDF L8113 L8113 470pF 100nF 75GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original     		PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    NE722S01

    Abstract: nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf
    Text: NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 ± 0.2 • LOW NOISE/HIGH GAIN:


    Original     		PDF NE722S01 NE722S01 19e-12 92e-12 05e-12 2e-10 nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf

    X band low noise

    Abstract: mesfet lnb transistor GaAS marking 576 NE722S01 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12
    Text: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz


    Original     		PDF NE722S01 NE722S01 X band low noise mesfet lnb transistor GaAS marking 576 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


    Original     		PDF AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519

    10GHz oscillator

    Abstract: doppler radar circuit for speed sensing avantek HTO-4000 Avantek rf OSCILLATORS Avantek amplifier HTO 8 GHz VCO 10GHz OSCILLATOR pulse generator 8400 avantek avantek vto HTO4000
    Text: Voltage-Controlled Oscillators Evaluated for System Design Application Note—M024 High tuning speed, small size, and low power consumption make VCOs important components in a number of microwave applications. The designer must be able to evaluate these devices


    Original     		PDF Note--M024 VTO-8000 VTO-9000 MTO-8000 10GHz oscillator doppler radar circuit for speed sensing avantek HTO-4000 Avantek rf OSCILLATORS Avantek amplifier HTO 8 GHz VCO 10GHz OSCILLATOR pulse generator 8400 avantek avantek vto HTO4000

    Untitled

    Abstract: No abstract text available
    Text: ED R E S U ATU C FO E FE SU S I Gary Zhang, Sabah Khesbak, Anil Agarwal, and San Chin T he first official shift in communication systems from fixed-location devices to portable/mobile devices happened in 1973 when Martin Cooper, general manager of Motorola’s Communications Systems Division at the time, placed the first mobile call from a New


    Original     		PDF

    10GHz oscillator

    Abstract: HTO4000 VTO-8000 doppler radar circuit for speed sensing 8GHz oscillator VCO 10GHZ oscillator VTO-8400 f1rm HTO-4000
    Text: Voltage-Controlled Oscillators Evaluated for System Design Application Note—M024 High tuning speed, small size, and low power consumption make VCOs important components in a number of microwave applications. The designer must be able to evaluate these devices


    Original     		PDF Note--M024 5963-3222E 10GHz oscillator HTO4000 VTO-8000 doppler radar circuit for speed sensing 8GHz oscillator VCO 10GHZ oscillator VTO-8400 f1rm HTO-4000

    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


    Original     		PDF fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm

    TGF4250

    Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
    Text: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the


    Original     		PDF

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		PDF 5091-8823E 5968-3244E atf-41435 99250 schematic diagram receiver data circuit satellite ATF-10235

    atf-41435

    Abstract: schematic diagram receiver satellite S2PB schematic diagram receiver data circuit satellite ATF-10235 AN-A002 tvro system in low power transmitter 2N2907 PNP Transistor to 92 2N2907 ATF10236
    Text: Design of a 4 GHz LNA for a TVRO System Application Note AN A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is shown in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Aerospace and Defense Solutions Aerospace and Defense Solutions Table of Contents Aerospace and Defense Product Overview . . . . . . . . 3 Certifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 High Reliability Screening Capabilities . . . . . . . . . . . . 5


    Original     		PDF BRO400-13B

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


    OCR Scan     		PDF NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER S pecifications are su b je ct to ch a n g e w ith o u t notice. PIN CONFIGURATION TOP VIEW DESCRIPTION T he M G F7170A C is a m onolithic m icrow ave integrated


    OCR Scan     		PDF MGF7170AC F7170A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEM ICO ND UC TO R <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POW ER AM PLIFIER Specifications are subject to ch an g e w ithout notice. DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M G F 7 1 6 9 C is a monolithic m icrow ave integrated


    OCR Scan     		PDF MGF7169C 600um MGF7169C GF7169C

    fujitsu mmic ic

    Abstract: k BAND LOW PHASE gaAs FET
    Text: FMM5509ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5509ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are


    OCR Scan     		PDF FMM5509ZE 800MHz FMM5509ZE 849MHz SSOP-16 FCSI0598M200 fujitsu mmic ic k BAND LOW PHASE gaAs FET