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    K1 PACKAGE Search Results

    K1 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    K1 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1 Package WSI 24-Pin .300 Cerdip (Package Type K) Original PDF

    K1 PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA250GKxxNB Three Phase Thyristor Module Half Bridge K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA250GK03NB 3TA250GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions


    Original     		3TA250GKxxNB 3TA250GK03NB 3TA250GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA150GKxxNB Three Phase Thyristor Module Half Bridge K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA150GK03NB 3TA150GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions


    Original     		3TA150GKxxNB 3TA150GK03NB 3TA150GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA200GKxxNB Three Phase Thyristor Module Half Bridge K3 K1 K2 K2 G2 K1 K3 G1 3 G3 K3 K3 Type 3TA200GK03NB 3TA200GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) ITSM 2 Dimensions in mm (1mm = 0.0394") K1 1 K2 G2 K1 G1 A G3 K2 A VRRM V 300 400 Test Conditions


    Original     		3TA200GKxxNB 3TA200GK03NB 3TA200GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA130GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 3TA130GK03NB 3TA130GK04NB 3 2 1 G3 K3 VRSM V 400 500 Symbol ITSM K1 K3 Type IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions


    Original     		3TA130GKxxNB 3TA130GK03NB 3TA130GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA0GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K2 K1 3 2 1 G3 K3 K3 Type 3TA0GK03NB 3TA0GK04NB Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 VRSM V 400 500 Symbol A VRRM V 300 400 Test Conditions Maximum Ratings Unit 60


    Original     		0GK03NB 0GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    MC68HC05K1

    Abstract: 4 MHz crystal 2pin oscillator osc 2pin MC68HC05K0 8 MHz crystal 2pin 4 MHz crystal 3pin
    Text: Order this document by MC68HC05K1 AD/D REV. 1 MOTOROLA •1 SEMICONDUCTOR TECHNICAL DATA MC68HC05K0/K1 Addendum to MC68HC05K0/K1 HCMOS Microcontroller Unit Technical Data This addendum supplements MC68HC05K0/K1 Technical Data MC68HC05K1/D with the following additional information:


    OCR Scan     		MC68HC05K1 MC68HC05K0/K1 MC68HC05K0/K1 MC68HC05K1/D) MC68HCL05K0 MC68HCL05K0, MC68HC05K0 MC68HSC05K0 MC68HSC05K0, 4 MHz crystal 2pin oscillator osc 2pin 8 MHz crystal 2pin 4 MHz crystal 3pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA100GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA100GK03NB 3TA100GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC


    Original     		3TA100GKxxNB 3TA100GK03NB 3TA100GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3TA0GKxxNB Three Phase Thyristor Module Half Bridge K1 K2 K3 K2 G2 K1 G1 K1 3 2 1 G3 K3 K3 Type 3TA0GK03NB 3TA0GK04NB VRSM V 400 500 Symbol IT(AV) IT(RMS) K2 Dimensions in mm (1mm = 0.0394") K2 G2 K1 G1 A G3 K3 A VRRM V 300 400 Test Conditions Single phase, half wave, 180oC conduction,TC=114oC


    Original     		0GK03NB 0GK04NB 180oC 114oC 50Hz/60Hz, 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: STTH60L06TV Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 2 x 40 A VRRM 600 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns A1 K1 A1 K2 A2 K2 K1 STTH60L06TV2 STTH60L06TV1 Features and benefits A1 A1 K1 • Ultrafast switching ■


    Original     		STTH60L06TV STTH60L06TV2 STTH60L06TV1 STTH60L06TV, PDF

    STTH12012TV1

    Abstract: STTH12012TV2 JESD97 STTH12012TV STTH12012
    Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■


    Original     		STTH12012TV STTH12012TV2 STTH12012TV1 STTH12012TV1 STTH12012TV2 JESD97 STTH12012TV STTH12012 PDF

    Untitled

    Abstract: No abstract text available
    Text: STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 60 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH12012TV STTH12012TV2 A1 A1 K1 Features and benefits • Ultrafast, soft recovery ■


    Original     		STTH12012TV STTH12012TV2 STTH12012TV1 PDF

    STTH60L06TV2

    Abstract: JESD97 STTH60L06TV STTH60L06TV1 diode tfr
    Text: STTH60L06TV Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 2 x 40 A VRRM 600 V Tj 150° C VF (typ) 1.30 V trr (typ) 50 ns A1 K1 A1 K2 A2 K2 K1 STTH60L06TV2 STTH60L06TV1 Features and benefits A1 A1 K1 • Ultrafast switching ■


    Original     		STTH60L06TV STTH60L06TV2 STTH60L06TV1 STTH60L06TV, STTH60L06TV2 JESD97 STTH60L06TV STTH60L06TV1 diode tfr PDF

    BYT230PIV400

    Abstract: BYT230PIV-400 BYT231PIV400 BYT231PIV200 BYT231PIV-400 BYT230
    Text: BYT230PIV-400 BYT231PIV-400  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-400


    Original     		BYT230PIV-400 BYT231PIV-400 75-THOMSON BYT230PIV400 BYT230PIV-400 BYT231PIV400 BYT231PIV200 BYT231PIV-400 BYT230 PDF

    488 DIODE

    Abstract: DIODE M4 marking RECTIFIER DIODES SGS BYT230PIV-1000 BYT231PIV-1000 v375a
    Text: BYT230PIV-1000 BYT231PIV-1000  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-1000


    Original     		BYT230PIV-1000 BYT231PIV-1000 488 DIODE DIODE M4 marking RECTIFIER DIODES SGS BYT230PIV-1000 BYT231PIV-1000 v375a PDF

    BYT230PIV-400

    Abstract: BYT231PIV400 BYT231PIV-400 BYT230PIV400
    Text: BYT230PIV-400 BYT231PIV-400  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-400


    Original     		BYT230PIV-400 BYT231PIV-400 75roelectronics. BYT230PIV-400 BYT231PIV400 BYT231PIV-400 BYT230PIV400 PDF

    BYT230PI

    Abstract: BYT231PI MARKING 15A D-UT 2,5-10
    Text: BYT230PI V -1000 BYT231PI(V)-1000  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2


    Original     		BYT230PI BYT231PI BTY231PI BTY230PI MARKING 15A D-UT 2,5-10 PDF

    BYT261PIV-400

    Abstract: BYT261PIV400 DIODE M4 marking BYT260PIV-400
    Text: BYT260PIV-400 BYT261PIV-400  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYT261PIV-400


    Original     		BYT260PIV-400 BYT261PIV-400 BYT261PIV-400 BYT261PIV400 DIODE M4 marking BYT260PIV-400 PDF

    DIODE D29 -08

    Abstract: smd diode order marking code stmicroelectronics STMicroelectronics smd marking code smd diode sod-323 marking code a2 Diode d29 08 STMicroelectronics smd DIODE marking code DIODE D28 06 BAS70-06WFILM STMicroelectronics marking code date diode DIODE MARKING CODE LAYOUT G SOT23
    Text: BAS70JWFILM SMALL SIGNAL SCHOTTKY DIODE Table 1: Main Product Characteristics NC IF 70 mA VRRM 70 V Tj 150°C VF max 0.41 V K2 K K A A K2 NC K1 A K1 A BAS70WFILM BAS70-06WFILM A2 K2 A2 K1 K K2 A1 A1 BAS70-05WFILM FEATURES AND BENEFITS • ■ ■ ■ A2


    Original     		BAS70JWFILM BAS70WFILM BAS70-06WFILM BAS70-05WFILM BAS70-04WFILM OT-323 BAS70JFILM OD-323 DIODE D29 -08 smd diode order marking code stmicroelectronics STMicroelectronics smd marking code smd diode sod-323 marking code a2 Diode d29 08 STMicroelectronics smd DIODE marking code DIODE D28 06 BAS70-06WFILM STMicroelectronics marking code date diode DIODE MARKING CODE LAYOUT G SOT23 PDF

    smd diode sod-323 marking code a2

    Abstract: smd diode order marking code stmicroelectronics STMicroelectronics smd marking code D31 SMD MARKING STMicroelectronics smd DIODE marking code DIODE D29 -08 st smd diode marking code "LE" BAS70-05WFILM smd diode sod-323 marking code a1 smd marking code stmicroelectronics
    Text: BAS70JWFILM SMALL SIGNAL SCHOTTKY DIODE Table 1: Main Product Characteristics NC IF 70 mA VRRM 70 V Tj 150°C VF max 0.41 V K2 K K A A K2 NC K1 A K1 A BAS70WFILM BAS70-06WFILM A2 K2 A2 K1 K K2 A1 A1 BAS70-05WFILM FEATURES AND BENEFITS • ■ ■ A1 BAS70-04WFILM


    Original     		BAS70JWFILM BAS70WFILM BAS70-06WFILM BAS70-05WFILM BAS70-04WFILM OT-323 OD-323 smd diode sod-323 marking code a2 smd diode order marking code stmicroelectronics STMicroelectronics smd marking code D31 SMD MARKING STMicroelectronics smd DIODE marking code DIODE D29 -08 st smd diode marking code "LE" BAS70-05WFILM smd diode sod-323 marking code a1 smd marking code stmicroelectronics PDF

    BYT230PI

    Abstract: BYT231PI bty230
    Text: BYT230PI V -400 BYT231PI(V)-400  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1


    Original     		BYT230PI BYT231PI BTY231PI BTY230PI bty230 PDF

    BTY260PI

    Abstract: BYT261PI BYT260PI BTY261PI
    Text: BYT260PI V -1000 BYT261PI(V)-1000  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2


    Original     		BYT260PI BYT261PI BTY261PI BTY260PI PDF

    BYT260PIV-1000

    Abstract: BYT261PIV-1000
    Text: BYT260PIV-1000 BYT261PIV-1000  FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYT261PIV-1000


    Original     		BYT260PIV-1000 BYT261PIV-1000 BYT260PIV-1000 BYT261PIV-1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: STTH200L04TV1 Ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current A1 K1 ■ Low thermal resistance A2 K2 ■ Reduces switching and conduction losses ■ Package insulation voltage: 2500 VRMS K1 A1 Description K2 The STTH200L04TV1 uses ST 400 V technology


    Original     		STTH200L04TV1 STTH200L04TV1 PDF

    K1 transistor datasheets

    Abstract: BCW71 k1 marking marking k1
    Text: SEMICONDUCTOR BCW71 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking K1 No. 1 Item Marking Device Mark K1 BCW71 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		BCW71 OT-23 K1 transistor datasheets BCW71 k1 marking marking k1 PDF