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    K12A45D Search Results

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    K12A45D Price and Stock

    Toshiba America Electronic Components TK12A45D(STA4,Q,M)

    MOSFET N-CH 450V 12A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK12A45D(STA4,Q,M) Tube 1
    • 1 $2.88
    • 10 $2.88
    • 100 $2.88
    • 1000 $0.96134
    • 10000 $0.90125
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    Mouser Electronics TK12A45D(STA4,Q,M)
    • 1 $2.6
    • 10 $2.43
    • 100 $1.21
    • 1000 $0.901
    • 10000 $0.901
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    Toshiba America Electronic Components TK12A45D(STA4

    Trans MOSFET N-CH 450V 12A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK12A45D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK12A45D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.07429
    • 1000 $0.97335
    • 10000 $0.97335
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    Toshiba America Electronic Components TK12A45D,S5Q(J

    MOSFETs N-Ch MOS 12A 450V 45W 1200pF 0.52
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TK12A45D,S5Q(J
    • 1 $2.09
    • 10 $1.74
    • 100 $1.28
    • 1000 $0.961
    • 10000 $0.901
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    K12A45D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		TK12A45D PDF

    Untitled

    Abstract: No abstract text available
    Text: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A45D Switching Regulator Applications Unit: mm (typ.) Low drain-source ON-resistance: RDS (ON) = 0.43 High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		TK12A45D PDF

    K12A45D

    Abstract: TK12A45D
    Text: K12A45D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A45D ○ スイッチングレギュレータ用 : Vth = 2.0～4.0 V (VDS = 10 VID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号 定格 単位 ド レ イ ン ・ ソ ー ス 間 電 圧


    Original     		TK12A45D K12A45D TK12A45D PDF

    TK12A45D

    Abstract: K12A45D
    Text: K12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A45D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V)


    Original     		TK12A45D TK12A45D K12A45D PDF