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K1B5616BBM Abstract: K1B2816B2A K1B5616B2M K1B5616BAM Text: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	PDF	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA 200us K1B5616BBM K1B2816B2A K1B5616B2M K1B5616BAM
UtRAM Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H Text: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	PDF	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA K1B6416B6C, K1B3216BDD 5555h) 5555h UtRAM K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H
samsung capacitance Lot Code Identification Abstract: K1B2816 Text: K1B2816B2A UtRAM 128Mb 8M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	PDF	K1B2816B2A 128Mb samsung capacitance Lot Code Identification K1B2816
K1B2816B2A Abstract: bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM Text: Technical Note on tBC This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM - K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION	Original	PDF	K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA K1B2816B2A bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM
SAMSUNG MEMORY 2006 Abstract: K1B2816B2A 128MB ADIE Text: UtRAM 128Mb M-die 100nm & A-die(90nm) Comparison Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology	Original	PDF	128Mb 100nm) K1B2816B2A K1B2816B6M 104Mhz 66Mhz 128Mb SAMSUNG MEMORY 2006 K1B2816B2A ADIE