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    Text: Preliminary UtRAM K1B3216B7D Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft - Design target Remark December 21, 2004 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1B3216B7D 2Mx16