K2602 TOSHIBA Search Results

K2602 TOSHIBA Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

K2602 TOSHIBA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor k2602 Abstract: No abstract text available Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 transistor k2602	PDF
K2602 Abstract: transistor k2602 2SK2602 SC-65 Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) Low leakage current	Original	2SK2602 K2602 transistor k2602 2SK2602 SC-65	PDF
K2602 Abstract: transistor k2602 K2602 toshiba 2SK2602 SC-65 Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 transistor k2602 K2602 toshiba 2SK2602 SC-65	PDF
Untitled Abstract: No abstract text available Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON-resistance : RDS (ON) = 0.9 High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) (typ.) Low leakage current	Original	2SK2602	PDF
K2602 Abstract: 2SK2602 SC-65 Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 2SK2602 SC-65	PDF
K2602 Abstract: 2SK2602 SC-65 Text: K2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) z Low leakage current	Original	2SK2602 K2602 2SK2602 SC-65	PDF
K2602 Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T) Text: 2SK2602 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5S (標準)	Original	2SK2602 10VID SC-65 2-16C1B K2602 2002/95/EC) K2602 jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T)	PDF