K3562 3.1 Search Results

K3562 3.1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
k3562 transistor Abstract: k3562 transistor k3562 2sk3562 k3562 voltage toshiba k3562 2SK3562 K3562 toshiba transistor k3562 Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3562 k3562 transistor k3562 transistor k3562 2sk3562 k3562 voltage toshiba k3562 2SK3562 K3562 toshiba transistor k3562	PDF
k3562 Abstract: k3562 transistor transistor k3562 2SK3562 2SK3562 equivalent toshiba k3562 k3562 voltage toshiba transistor k3562 k3562 7 m equivalent 2sk3562 Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2SK3562 equivalent toshiba k3562 k3562 voltage toshiba transistor k3562 k3562 7 m equivalent 2sk3562	PDF
k3562 Abstract: k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3562 k3562 k3562 transistor transistor k3562 2SK3562 2sk3562 equivalent 2SK3562 K3562 transistor compatible k3562 equivalent 2sk3562 toshiba k3562 k3562 voltage	PDF
k3562 transistor Abstract: transistor k3562 K3562 toshiba k3562 k3562 voltage 2SK3562 2SK3562 K3562 2-10U1B Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3562 k3562 transistor transistor k3562 K3562 toshiba k3562 k3562 voltage 2SK3562 2SK3562 K3562 2-10U1B	PDF
2sk3562 Abstract: k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562 Text: 2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3562 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3562 2sk3562 k3562 transistor K3562 transistor k3562 k3562 voltage transistor compatible k3562 toshiba k3562 2SK3562 K3562	PDF
k3562 Abstract: 2SK3562 K3562 2SK3562 2sk3562 equivalent Text: 2SK3562 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI 2SK3562 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.0 S (標準)	Original	2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 K3562 2SK3562 2sk3562 equivalent	PDF
k3562 Abstract: 2SK3562 2SK3562 K3562 2sk3562 equivalent Text: 2SK3562 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI 2SK3562 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 0.9 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.0 S (標準)	Original	2SK3562 SC-67 2-10U1B 12h-c) k3562 2SK3562 2SK3562 K3562 2sk3562 equivalent	PDF