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    K3563 TRANSISTOR TEST Search Results

    K3563 TRANSISTOR TEST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K3563 TRANSISTOR TEST Datasheets Context Search

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    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Text: TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 Transistor K3563 2sk3563 transistor 625

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications