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    K3569 TRANSISTOR Search Results

    K3569 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    K3569 TRANSISTOR Datasheets Context Search

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    k3569

    Abstract: 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 2SK3569 transistor k3569 K3569 data transistor 2SK3569 k3569 transistor k3569 Silicon N Channel MOS Type 2SK3569 application PDF

    transistor k3569

    Abstract: K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 transistor k3569 K3569 2SK3569 k3569 Silicon N Channel MOS Type k3569 transistor transistor 2SK3569 K356 PDF

    K3569

    Abstract: K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 K3569 K3569 equivalent K3569 DATASHEET transistor k3569 2SK3569 equivalent 2SK3569 k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type toshiba k3569 PDF

    k3569

    Abstract: No abstract text available
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 k3569 PDF

    K3569

    Abstract: transistor k3569 K3569 data 2SK3569 2SK3569 application k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)


    Original     		2SK3569 K3569 transistor k3569 K3569 data 2SK3569 2SK3569 application k3569 transistor transistor 2SK3569 k3569 Silicon N Channel MOS Type k356 toshiba k3569 PDF

    2sk3569

    Abstract: transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor
    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 2sk3569 transistor compatible k3569 k3569 transistor compatible 2SK3569 transistor k3569 K3569 DATASHEET K3569 equivalent K3569 data transistor 2SK3569 k3569 transistor PDF

    transistor compatible k3569

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    Text: 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3569 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.)


    Original     		2SK3569 transistor compatible k3569 K3569 transistor k3569 2SK3569 equivalent 2SK3569 K3569 equivalent transistor compatible 2SK3569 K3569 data K3569 DATASHEET transistor 2SK3569 PDF