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Vishay Intertechnologies CRCW0603100KFKEA Thick Film Resistors - SMD 1/10watt 100Kohms 1%
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TTI	CRCW0603100KFKEA	Reel	6,595,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00357	Buy Now
Cornell Dubilier Electronics Inc MC22FF561J-F Mica Capacitors 560pF 1kV 5% 2220
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TTI	MC22FF561J-F	Bulk			200	1 - 10 - 100 - 1000 $4.44 10000 $4.44	Buy Now
Vishay Intertechnologies CW01050R00JE73 Wirewound Resistors - Through Hole 10watts 50ohms 5%
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TTI	CW01050R00JE73	Reel			500	1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now
Murata Manufacturing Co Ltd DMS-30LCDA-4/20S-C Digital Panel Meters 4-20MA LCD LOOP-POWER 3.5 DIG
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TTI	DMS-30LCDA-4/20S-C	Bulk			12	1 - 10 - 100 $77.36 1000 $77.36 10000 $77.36	Buy Now
Others 2SK3667 AVAILABLE EU
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ComSIT USA	2SK3667		650			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K3667 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K3667 Abstract: toshiba k3667 2SK3667 transistor compatible k3667 Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	PDF	2SK3667 K3667 toshiba k3667 2SK3667 transistor compatible k3667
toshiba k3667 Abstract: K3667 ALL k3667 K366 2SK3667 Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	PDF	2SK3667 toshiba k3667 K3667 ALL k3667 K366 2SK3667
K3667 Abstract: 2SK3667 K366 2-10U1B Text: K3667 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5 S (標準)	Original	PDF	2SK3667 SC-67 2-10U1B K3667 2SK3667 K366 2-10U1B
K3667 Abstract: 2SK3667 S12C toshiba k3667 Text: K3667 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ K3667 ○ スイッチングレギュレータ用単位: mm : RDS ( ON ) = 0.75 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5 S (標準)	Original	PDF	2SK3667 SC-67 2-10U1B K3667 2SK3667 S12C toshiba k3667
toshiba k3667 Abstract: K3667 ALL k3667 2SK3667 Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	PDF	2SK3667 toshiba k3667 K3667 ALL k3667 2SK3667
K3667 Abstract: toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667 Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5 S (typ.)	Original	PDF	2SK3667 K3667 toshiba k3667 transistor compatible k3667 2SK3667 ALL k3667
K3667 Abstract: toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent Text: K3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3667 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	PDF	2SK3667 K3667 toshiba k3667 ALL k3667 2sk3667 equivalent 2SK3667 K366 2sk3667 transistor equivalent