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    K3869 TRANSISTOR Search Results

    K3869 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K3869 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3869

    Abstract: K3869 Transistor Toshiba K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869

    K3869 Transistor

    Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869,

    Toshiba K3869

    Abstract: K3869 Transistor K3869 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869

    K3869

    Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 K3869 Toshiba K3869 K3869 Transistor 2SK3869 k386

    k3869

    Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
    Text: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		PDF 2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869