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    K4013 TRANSISTOR Search Results

    K4013 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor k4013

    Abstract: k4013 K4013 transistor 2SK4013 MARKING toshiba 133
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		PDF 2SK4013 transistor k4013 k4013 K4013 transistor 2SK4013 MARKING toshiba 133

    2SK4013

    Abstract: transistor k4013 K4013 transistor k4013
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 640 V)


    Original     		PDF 2SK4013 2SK4013 transistor k4013 K4013 transistor k4013

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK4013

    k4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK4013 k4013 2SK4013 transistor k4013 K4013 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK4013

    K4013

    Abstract: 2SK4013 transistor k4013 K4013 transistor
    Text: 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK4013 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 640 V)


    Original     		PDF 2SK4013 K4013 2SK4013 transistor k4013 K4013 transistor