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    K4F151611D Price and Stock

    Samsung Semiconductor K4F151611D-JL60

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    Bristol Electronics K4F151611D-JL60 8,194
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    Samsung Semiconductor K4F151611D-JC60

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    Bristol Electronics K4F151611D-JC60 378
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    Quest Components K4F151611D-JC60 302
    • 1 $5.49
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    K4F151611D-JC60 25
    • 1 $8.19
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    K4F151611D-JC60 7
    • 1 $5.49
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    Samsung Semiconductor K4F151611D-TL60

    FAST PAGE DRAM, 1MX16, 60NS, CMOS, PDSO44
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    Quest Components K4F151611D-TL60 876
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    Samsung Electronics Co. Ltd K4F151611D-JC60

    Electronic Component
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    ComSIT USA K4F151611D-JC60 14,976
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    K4F151611D Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F151611D Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    K4F151611D-J Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Original PDF
    K4F151611D-JC60 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151611D-JL50 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151611D-JL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: SOJ: 42-Pin Original PDF
    K4F151611D-LC50 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151611D-LL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151611D-T Samsung Electronics 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Original PDF
    K4F151611D-TC50 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151611D-TC60 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151611D-TL50 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF
    K4F151611D-TL60 Samsung Electronics DRAM Chip: FPM: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin Original PDF

    K4F151611D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4F171611D

    Abstract: K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		PDF K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 h1612D 400mil K4F171611D K4F171611D-J K4F171612D K4F171612D-J K4F151611D K4F151611D-J K4F151612D K4F151612D-J

    K4F151611D

    Abstract: K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J
    Text: K4F171611D, K4F151611D K4F171612D, K4F151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power


    Original     		PDF K4F171611D, K4F151611D K4F171612D, K4F151612D 16Bit 1Mx16 400mil K4F151611D K4F151611D-J K4F151612D K4F151612D-J K4F171611D K4F171611D-J K4F171612D K4F171612D-J

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits 1Mx16bits 42-pin 72-pin M53210124DE2/DJ2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits 1Mx16bits 42-pin 72-pin M53210224DE2/DJ2

    K4F151611D

    Abstract: No abstract text available
    Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124DE2/DJ2 M53210124DE2/DJ2 1Mx16, M53210124D 1Mx32bits M53210124D 1Mx16bits 42-pin 72-pin K4F151611D

    M53210

    Abstract: No abstract text available
    Text: M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53210224D


    Original     		PDF M53210224DE2/DJ2 M53210224DE2/DJ2 1Mx16, M53210224D 2Mx32bits M53210224D M53210224DE2-C cycles/16ms 1Mx16bits 42-pin M53210