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    K4F170812D Search Results

    K4F170812D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F170812D Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    K4F170812D-B Samsung Electronics 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. Original PDF
    K4F170812D-F Samsung Electronics 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. Original PDF

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    k1608

    Abstract: K4F160811D K4F160811D-B K4F160812D K4F160812D-B K4F170811D K4F170811D-B K4F170812D K4F170812D-B
    Text: K4F170811D, K4F160811D K4F170812D, K4F160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original     		PDF K4F170811D, K4F160811D K4F170812D, K4F160812D 300mil k1608 K4F160811D K4F160811D-B K4F160812D K4F160812D-B K4F170811D K4F170811D-B K4F170812D K4F170812D-B