K4S280832M Search Results

K4S280832M Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S280832M		Samsung Electronics	128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL		Original	PDF
K4S280832M-TC/L10		Samsung Electronics	4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3).		Original	PDF
K4S280832M-TC/L1H		Samsung Electronics	4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2).		Original	PDF
K4S280832M-TC/L1L		Samsung Electronics	4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3).		Original	PDF
K4S280832M-TC/L80		Samsung Electronics	4M x 8-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3).		Original	PDF

K4S280832M Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K4S280832M Abstract: No abstract text available Text: K4S280832M CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM	Original	K4S280832M 128Mbit K4S280832M A10/AP	PDF
K4S281632M-TL10 Abstract: M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924MT0-L10 • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632M-TL10	Original	144pin) 128Mb M466S0924MT0-L10 8Mx64 8Mx16 K4S281632M-TL10 000mil 4K/64ms 128bytes 256bytes K4S281632M-TL10 M466S0924MT0-L10 M466S1723MT2-L10 M466S1723MT3-L10 M466S1724MT2-L10 K4S280832m	PDF
M466S1723MT3-L10 Abstract: No abstract text available Text: M466S1723MT3 PC66 SODIMM M466S1723MT3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723MT3 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M466S1723MT3 M466S1723MT3 16Mx64 16Mx8, 400mil 144-pin M466S1723MT3-L10	PDF
CDC2509 Abstract: M377S1723MT3-C1H M377S1723MT3-C1L Text: PC100 Registered DIMM M377S1723MT3 M377S1723MT3 SDRAM DIMM Intel 1.2 ver Base 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S1723MT3 is a 16M bit x 72 Synchronous	Original	PC100 M377S1723MT3 M377S1723MT3 16Mx72 16Mx8, 16Mx8 400mil 18-bits CDC2509 M377S1723MT3-C1H M377S1723MT3-C1L	PDF
M374S3323MT0-C1H Abstract: M374S3323MT0-C1L M374S3323MT0-C80 Text: M374S3323MT0 PC100 Unbuffered DIMM M374S3323MT0 SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S3323MT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M374S3323MT0 PC100 M374S3323MT0 32Mx72 16Mx8, 400mil 168-pin M374S3323MT0-C1H M374S3323MT0-C1L M374S3323MT0-C80	PDF
M374S1723MTS-C1L Abstract: M374S1723MTS-C80 Text: M374S1723MTS PC100 Unbuffered DIMM M374S1723MTS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1723MTS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M374S1723MTS PC100 M374S1723MTS 16Mx72 16Mx8, 400mil 168-pin M374S1723MTS-C1L M374S1723MTS-C80	PDF
K4S281632M-TC80 Abstract: samsung dimm 128mb pc100 32mx64 Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(128Mb M-die base) Rev. 0.0 August 1999 Rev 0.0 Aug. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0924MT0-C80/C1H/C1L • Organization : 8Mx64 • Composition : 8Mx16 *4	Original	PC100 168pin) 128Mb M366S0924MT0-C80/C1H/C1L 8Mx64 8Mx16 K4S281632M-TC80/C1H/C1L 375mil K4S281632M-TC80 samsung dimm 128mb pc100 32mx64	PDF
M466S1723MT2-L10 Abstract: No abstract text available Text: M466S1723MT2 PC66 SODIMM M466S1723MT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S1723MT2 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	M466S1723MT2 M466S1723MT2 16Mx64 16Mx8, 400mil 144-pin M466S1723MT2-L10	PDF
CDC2509 Abstract: M377S3323MT0-C1H M377S3323MT0-C1L Text: M377S3323MT0 PC100 Registered DIMM M377S3323MT0 SDRAM DIMM Intel 1.2 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S3323MT0 is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S3323MT0 consists of eighteen CMOS 16Mx8 bit	Original	M377S3323MT0 PC100 M377S3323MT0 32Mx72 16Mx8, 16Mx8 400mil 18bits CDC2509 M377S3323MT0-C1H M377S3323MT0-C1L	PDF
M366S3323MT0-C1L Abstract: No abstract text available Text: PC100 Unbuffered DIMM M366S3323MT0 M366S3323MT0 SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S3323MT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	PC100 M366S3323MT0 M366S3323MT0 32Mx64 16Mx8, 400mil 168-pin M366S3323MT0-C1L	PDF
M366S1723MTS-C1H Abstract: M366S1723MTS-C1L M366S1723MTS-C80 K4S280832 Text: PC100 Unbuffered DIMM M366S1723MTS M366S1723MTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1723MTS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	Original	PC100 M366S1723MTS M366S1723MTS 16Mx64 16Mx8, 400mil 168-pin M366S1723MTS-C1H M366S1723MTS-C1L M366S1723MTS-C80 K4S280832	PDF