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    K6A60 Search Results

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    K6A60 Price and Stock

    Toshiba America Electronic Components TK6A60W,S4VX

    MOSFET N-CH 600V 6.2A TO220SIS
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    DigiKey TK6A60W,S4VX Tube 40 1
    • 1 $2.9
    • 10 $2.9
    • 100 $2.9
    • 1000 $0.9693
    • 10000 $0.91
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    Mouser Electronics TK6A60W,S4VX 145
    • 1 $2.36
    • 10 $2.14
    • 100 $1.34
    • 1000 $0.91
    • 10000 $0.91
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    Toshiba America Electronic Components TK6A60D(STA4,Q,M)

    MOSFET N-CH 600V 6A TO220SIS
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    DigiKey TK6A60D(STA4,Q,M) Tube
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    Toshiba America Electronic Components TK6A60WS4VX

    Trans MOSFET N 600V 6.2A 3-Pin SC-67 Tube - Rail/Tube (Alt: TK6A60W,S4VX)
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    Avnet Americas TK6A60WS4VX Tube 32 Weeks 50
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    • 100 $1.08472
    • 1000 $0.9828
    • 10000 $0.9828
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    Bristol Electronics TK6A60WS4VX 300
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    TK6A60WS4VX 195
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    TK6A60WS4VX 60 3
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    • 10 $1.95
    • 100 $1.2188
    • 1000 $1.2188
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    ComSIT USA TK6A60WS4VX 500
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    Toshiba America Electronic Components TK6A60W,S4VX(M

    Mosfet, N-Ch, 600V, 6.2A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes |Toshiba TK6A60W, S4VX(M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK6A60W,S4VX(M Bulk 23 1
    • 1 $1.57
    • 10 $1.35
    • 100 $1.03
    • 1000 $0.797
    • 10000 $0.625
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    EBV Elektronik TK6A60W,S4VX(M 350 23 Weeks 50
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    New Advantage Corporation TK6A60W,S4VX(M 300 1
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    • 1000 $0.9328
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    Toshiba America Electronic Components TK6A60DR,S4X(S

    TK6A60DR - Power MOSFET (N-ch 500V<VDSS<700V)
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    Rochester Electronics TK6A60DR,S4X(S 10,250 1
    • 1 $0.9722
    • 10 $0.9722
    • 100 $0.9139
    • 1000 $0.8264
    • 10000 $0.8264
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    K6A60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6A60D

    Abstract: K6A60 TK6A60D
    Text: K6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


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    PDF TK6A60D K6A60D K6A60 TK6A60D

    k6a60d

    Abstract: No abstract text available
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original
    PDF TK6A60D k6a60d

    K6A60D

    Abstract: No abstract text available
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original
    PDF TK6A60D K6A60D

    k6a60d

    Abstract: TK6A60D K6A60
    Text: K6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original
    PDF TK6A60D SC-67 2-10U1B 20070701-JA k6a60d TK6A60D K6A60

    K6A60D

    Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original
    PDF TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2

    K6A60D

    Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original
    PDF TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A