Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K6A60D DATA Search Results

    K6A60D DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet
    MP-52RJ11SNNE-015 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft Datasheet
    MP-52RJ11UNNE-025 Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-025 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 25ft Datasheet
    MP-52RJ11SNNE-005 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-005 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 5ft Datasheet
    MP-52RJ11UNNE-007 Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-007 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 7ft Datasheet

    K6A60D DATA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6A60D

    Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2 PDF

    K6A60D

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		TK6A60D K6A60D PDF

    K6A60D

    Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A PDF

    k6a60d

    Abstract: No abstract text available
    Text: TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		TK6A60D k6a60d PDF