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    Samsung Semiconductor K6R4008V1D-JC10

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    K6R4008V1D Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6R4008V1D Samsung Electronics 512K x 8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-JC Samsung Electronics Original PDF
    K6R4008V1D-JC08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-JC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-JI08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-JI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-J(T)C(I)08/10 Samsung Electronics 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-J(T)C(I)08_10 Samsung Electronics 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-KC08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-KC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-KI08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-KI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-TC08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-TC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-TI08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-TI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-UC08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-UC10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-UI08 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4008V1D-UI10 Samsung Electronics 256K x 16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF

    K6R4008V1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6R4016V1D-J

    Abstract: K6R4008V1D
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4016V1D-J K6R4008V1D

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016

    Samsung K6R4008C1D

    Abstract: K6R4008C1D 317 mg K6R4008V1D SAMSUNG SRAM 110e4
    Text: Single Event Latch-Up Testing on Samsung Rev. D 4M Fast Asynchronous SRAM Joseph Benedetto, Ph.D. Craig Hafer 719-594-8319 [email protected] Summary—Single event latch-up SEL testing was performed on the Samsung K6R4008V1D and K6R4008C1D 3.3 and 5.0V 4M Asynchronous SRAMs (respectively) at the Texas A&M


    Original     		PDF K6R4008V1D K6R4008C1D K6R4008V1D EIA/JESD57 Samsung K6R4008C1D 317 mg SAMSUNG SRAM 110e4

    K6R4008V1D

    Abstract: 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4008V1D 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2

    K6R4008

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		PDF K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4008

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    1H08S

    Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
    Text: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -


    Original     		PDF ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA IMP1232LPEMA ASM1232LPN 1H08S PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR

    K6R4016V1D

    Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4016V1D 256Kx16 110mA 130mA 55/Typ. 35/Typ. K6R4016V1D K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10

    44-TSOP2

    Abstract: K6R4004C1D
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 44-TSOP2 K6R4004C1D

    ADM809RAR

    Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
    Text: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied


    Original     		PDF IS61LV25616AL IS61LV5128AL IS61LV6416 IS61C6416 IS61LV1024 48-pin AS9C25256M2036L AS9C25512M2018L 512Kx18 ADM809RAR AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    k6r4008c1d-j

    Abstract: K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF k6r4008c1d-j K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K6R4016C1D

    Abstract: K6R4004C1D-JC K6R4008
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016C1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4016C1D 256Kx16 55/Typ. 35/Typ. K6R4016C1D K6R4004C1D-JC K6R4008

    K6R4004C1D

    Abstract: K6R4004C1D-JC K6R4016C1D K6R4016 K6R4004
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4004C1D K6R4004C1D-JC K6R4016C1D K6R4016 K6R4004

    k6r4016

    Abstract: K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC
    Text: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1D Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. k6r4016 K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC

    K6R4016V1D-T

    Abstract: K6R4016V1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. K6R4016V1D-T K6R4016V1D

    K6R4008V1D

    Abstract: K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF K6R4008V1D K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D