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    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), [email protected], IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		PDF 2N7002K 500mA 200mA OT-23 2002/95/EC OT-23 MIL-STD-750, 200mA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA OT-323 OT-323 Packa23 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA OT-23 200mA 2010-REV RB500V-40

    k72 wn

    Abstract: k72 diode 2N7002KW
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV k72 wn k72 diode 2N7002KW

    K72 marking diode

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		PDF 2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV K72 marking diode

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω


    Original     		PDF 2N7002K 500mA 2002/95/EC OT-23 MIL-STD-750 2010-REV OT-23

    2N7002K

    Abstract: K72 MARKING SOT-23 2N7002K_R1
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA OT-23 2002/95/EC IEC61249 200mA 2010-REV RB500V-40 2N7002K K72 MARKING SOT-23 2N7002K_R1

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K OT-23 500mA 200mA OT-23 2010-REV RB500V-40

    k72 sot-23

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA OT-23 200mA 2010-REV RB500V-40 k72 sot-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K OT-23 500mA 200mA 2002/95/EC IEC61249 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K-AU OT-23 500mA 200mA TS16949 AEC-Q101 2002/95/EC 2010-REV

    2N7002K R1

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA 200mA 2011/65/EU IEC61249 OT-23 OT-23 2010-REV 2N7002K R1

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K-AU 500mA 200mA TS16949 AECQ101 2002/95/EC IEC61249 OT-23 2010-REV 2N7002KA

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


    Original     		PDF element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE

    1HT251

    Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
    Text: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A


    OCR Scan     		PDF FojO33 KT357 KT358 KT361 KT363 KT364-2 KT366 KT368 KT369 KT369-1 1HT251 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313