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    KA BAND GAAS FET PACKAGE Search Results

    KA BAND GAAS FET PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    KA BAND GAAS FET PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TGA2519-SG

    Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
    Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m


    Original     		PDF AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519

    ka band lna

    Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
    Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: [email protected] Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for


    Original     		PDF

    MGF4937

    Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
    Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed


    Original     		PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information February 18, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 28 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss


    Original     		PDF TGA4915-EPU-CP TGA4915-EPU-CP TGA4915 DM6030HK

    TGA4915-EPU-CP

    Abstract: ka band power mmic
    Text: Advance Product Information June 30, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss


    Original     		PDF TGA4915-EPU-CP TGA4915-EPU-CP ka band power mmic

    Untitled

    Abstract: No abstract text available
    Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm


    Original     		PDF TGA4510-SM TGA4510-SM

    Untitled

    Abstract: No abstract text available
    Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm


    Original     		PDF TGA4510-SM TGA4510-SM 25-um

    Untitled

    Abstract: No abstract text available
    Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm


    Original     		PDF TGA4510-SM TGA4510-SM 25-um

    Untitled

    Abstract: No abstract text available
    Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm


    Original     		PDF TGA4510-SM TGA4510-SM

    RO4003

    Abstract: 2931 5v
    Text: TGA4510-SM Ka Band Compact Driver Amplifier Key Features • • • • • • Typical Frequency Range: 29-31 GHz 17 dBm Nominal Psat 15 dB Nominal Gain Bias Conditions: Vd = 6V, Id = 60 mA Compact 4 x 4 QFN with 20 leads Package Dimensions: 4.0 x 4.0 x 0.9 mm


    Original     		PDF TGA4510-SM TGA4510-SM RO4003 2931 5v

    DM6030HK

    Abstract: TGA4905-CP 102 00024 0005 ka band gaas fet Package
    Text: TGA4905-CP 4 Watt Ka Band Packaged Amplifier Key Features and Performance • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent up to 4 A under RF drive Package Dimensions:


    Original     		PDF TGA4905-CP TGA4905-CP TGA4905 DM6030HK 102 00024 0005 ka band gaas fet Package

    Untitled

    Abstract: No abstract text available
    Text: TGA4905-CP 4 Watt Ka Band Packaged Amplifier Key Features and Performance • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent up to 4 A under RF drive Package Dimensions:


    Original     		PDF TGA4905-CP TGA4905-CP TGA4905 DM6030HK

    VMMK-2303

    Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
    Text: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and


    Original     		PDF 800MHz AV02-2103EN VMMK-2303 VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03

    x-band microwave fet

    Abstract: x-band mmic lna MMIC X-band amplifier x-band limiter GAAS FET AMPLIFIER x-band 10w microwave transceiver X band 5-bit phase shifter MMIC s-band X-band GaAs pHEMT MMIC Chip x-band power transistor
    Text: GaAs MMIC PROCESSES ENABLE MULTI-FUNCTION INTEGRATION, INCREASING RELIABILITY WHILE REDUCING CHIP SIZE AND COST By Dr. Edward L. Griffin and D. Gary Lerude Aerospace & Defense ICs M/A-COM, a Tyco Electronics Company Introduction After some 20+ years of DoD technology development, the commercial wireless market has


    Original     		PDF

    x-band power transistor

    Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
    Text: MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost by Dr. Edward L. Griffin and D. Gary Lerude, Aerospace & Defense ICs, M/A-COM, a Tyco Electronics Company Introduction After more than 20 years of DoD technology development, the exploding


    Original     		PDF

    ka band high power fet amplifier schematic

    Abstract: DM6030HK TGA4905-CP ka band power mmic
    Text: Advance Product Information February 7, 2006 4 Watt Ka Band Packaged Amplifier TGA4905-CP Key Features and Performance • • • • • • 36 dBm VSAT band Psat 22 dB Nominal Gain 25 - 31 GHz Frequency Range 0.25µm pHEMT Technology Bias Conditions: 6 V, 2.1 A Quiescent


    Original     		PDF TGA4905-CP TGA4905-CP TGA4905 DM6030HK ka band high power fet amplifier schematic ka band power mmic

    TGA4901-EPU-CP

    Abstract: No abstract text available
    Text: Advance Product Information March 21, 2003 3 Watt Ka Band Packaged Amplifier TGA4901-EPU-CP Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: Vd=6V Idq=2.2A Primary Applications TGA4901 S-Parameters


    Original     		PDF TGA4901-EPU-CP TGA4901 18dBm TGA4901-EPU-CP

    TGA4902-SM

    Abstract: No abstract text available
    Text: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio


    Original     		PDF TGA4902-SM TGA4902-SM

    Untitled

    Abstract: No abstract text available
    Text: TGA4902-SM Ka Band Packaged MPA Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications • • • Ka-Band VSAT Point-to-Point Radio


    Original     		PDF TGA4902-SM TGA4902-SM

    ka band gaas fet Package

    Abstract: ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz
    Text: GaAs FETs and PHEMTs 3 9 Q. & Specifications Applications Package Part Number 21 dB Pi dB @ 18 GHz Medium Power Amplifier Chip Via AFM04P2-000 Low Noise/Medium Power MESFET 20 dB Pi dB @ 18 GHz Medium Power Amplifier Chip (Non-Via) AFM04P3-000 Low Noise/Medium


    OCR Scan     		PDF AFM04P2-000 AFM04P3-000 AFM04P3-212 AFM04P3-213 AFM06P2-000 AFM06P2-212 AFM06P2-213 AFM06P3-212 AFM06P3-213 AFM08P2-000 ka band gaas fet Package ka band power fet gaas fet micro-X Package GHZ micro-X Package power amplifier 4 ghz power amplifier power amplifier 5 ghz

    2SK241 Equivalent FET

    Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
    Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo


    OCR Scan     		PDF OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf

    MGF1601

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The


    OCR Scan     		PDF MGF1601B MGF1601B, 100mA Pro54 MGF1601

    MGF4919

    Abstract: MGF4919G
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The


    OCR Scan     		PDF MGF491xG MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G MGF4919

    Untitled

    Abstract: No abstract text available
    Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an


    OCR Scan     		PDF UPG107B UPG107P UPG107B UPG107B,