RO4403
Abstract: ka band high power fet amplifier schematic OPAMP RF MODULATOR diode d1n4148 ka Band LNA, mixer Analog Voltage Variable Attenuator HMC346MS8G HMC346MS8G spice model HMC341 Voltage Controlled Attenuator
Text: v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator General Description The HMC346MS8G is an absorptive Voltage Variable Attenuator VVA in an 8 lead surface-mount package operating from DC - 8 GHz. It features an on-chip reference attenuator for use with an external OpAmp to
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HMC346MS8G
RO4403
ka band high power fet amplifier schematic
OPAMP RF MODULATOR
diode d1n4148
ka Band LNA, mixer
Analog Voltage Variable Attenuator
HMC346MS8G spice model
HMC341
Voltage Controlled Attenuator
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator
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HMC346MS8G
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ka band high power fet amplifier schematic
Abstract: No abstract text available
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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12 volt-30 amp power diode
Abstract: ka-band amplifier high power fet amplifier schematic fet ft 30 GHZ ka band high power fet amplifier schematic pHEMT transistor ka-band mixer 10 ghz driver amplifier FET differential amplifier circuit Ka-band
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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AA038P5-00
Abstract: No abstract text available
Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989
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AA038P5-00
MIL-STD-883
8/00A
AA038P5-00
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AA038P5-00
Abstract: No abstract text available
Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989
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AA038P5-00
MIL-STD-883
12/99A
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AA038P5-00
Abstract: rf amplifier broad band
Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989
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AA038P5-00
MIL-STD-883
8/00A
AA038P5-00
rf amplifier broad band
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AA038P5-00
Abstract: No abstract text available
Text: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 21 dBm Saturated Output Power at 38 GHz 1 .7 0 0 - 1.588 1 .2 3 0 - ■ 19 dB Small Signal Gain ■ 0.25 (im Ti/Pd/Au Gates 0.000
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OCR Scan
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AA038P5-00
MIL-STD-883
8/98A
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PDF
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AA038P5-00
Abstract: No abstract text available
Text: 34-41 GHz GaAs MMIC Power Amplifier ESAlpha AA038P5-00 Features Chip Outline • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain 1.700 1.588 1.230 ■ 19 dBm Typical Pi dB Output Power at 39 GHz ■ 0.25 ¡im Ti/Pd/Au Gates 0.000 ■ 100% On-Wafer RF and DC Testing
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OCR Scan
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MIL-STD-883
10/99A
AA038P5-00
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Untitled
Abstract: No abstract text available
Text: 23-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P4-00 Features Chip Outline • Single Bias Supply Operation 6 V ■ 26 dBm Output Power at 28 GHz 0.000 ■ 13.5 dB Small Signal Gain 0 .1 1 0 ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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OCR Scan
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AA028P4-00
MIL-STD-883
8/98A
AA028P4-00
028P4-00
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AA038P5-00
Abstract: No abstract text available
Text: 34–41 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989
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AA038P5-00
MIL-STD-883
10/99A
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AA038P5-00
Abstract: power amplifier 15 GHz dB dBm power amplifier 5 ghz ka band high power fet amplifier schematic 5.5 GHz power amplifier
Text: 37–39 GHz GaAs MMIC Power Amplifier AA038P5-00 Features • Single Bias Supply Operation 5.5 V ■ 18 dB Typical Small Signal Gain Chip Outline 1.700 1.588 1.230 ■ 19 dBm Typical P1 dB Output Power at 39 GHz 0.470 ■ 0.25 µm Ti/Pd/Au Gates 3.400 2.989
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AA038P5-00
MIL-STD-883
11/02A
AA038P5-00
power amplifier 15 GHz dB dBm
power amplifier 5 ghz
ka band high power fet amplifier schematic
5.5 GHz power amplifier
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Untitled
Abstract: No abstract text available
Text: 30-35 GHz GaAs MMIC Driver Amplifier ESAlpha AA035P3-00 Features Chip Outline • Single Bias Supply Operation 6 V C\J ■ 18 dB Small Signal Gain CO ■ 19 dBm Saturated Output Power at 35 GHz ■ 0.25 (im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
MIL-STD-883
AA035P3-00
8/98A
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Untitled
Abstract: No abstract text available
Text: 30–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 18 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
MIL-STD-883
10/99A
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ka band gaas MESfet
Abstract: AA035P3-00
Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
gold-basedS11
1/01A
ka band gaas MESfet
AA035P3-00
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mmic s2
Abstract: ka band high power fet amplifier schematic EM-33 AA028P1-00 ka band gaas MESfet alpha power supply MMIC amplifier Mt
Text: 26-30 GHz GaAs MMIC Power Amplifier ESAlpha AA028P1-00 Chip Outline Features • Single Bias Supply Operation 6 V ■ 23 dBm Saturated Output Power at 28 GHz 1 .7 0 0 -1 .6 1 3 — f 1 .3 7 1 — 1 y -0 ■PIN ■ 15 dB Small Signal Gain Typical at 28 GHz
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MIL-STD-883
2/99A
AA028P1-00
2/99A
mmic s2
ka band high power fet amplifier schematic
EM-33
AA028P1-00
ka band gaas MESfet
alpha power supply
MMIC amplifier Mt
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Untitled
Abstract: No abstract text available
Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
MIL-STD-883
12/99A
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Untitled
Abstract: No abstract text available
Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
8/00A
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AA035P3-00
Abstract: No abstract text available
Text: 31–35 GHz GaAs MMIC Driver Amplifier AA035P3-00 1.554 • Single Bias Supply Operation 5 V ■ 19 dB Typical Small Signal Gain ■ 17 dBm Typical P1 dB Output Power at 35 GHz 3.386 Chip Outline 2.471 Features 1.905 1.250 ■ 0.25 µm Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing
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AA035P3-00
1/01A
AA035P3-00
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AA028P1-00
Abstract: No abstract text available
Text: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 1.613 1.371 ■ 22 dBm Typical P1 dB Output Power at 28 GHz ■ 13.5 dB Typical Small Signal Gain 0.086 ■ 0.25 µm Ti/Pd/Au Gates 0.329 3.400
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AA028P1-00
MIL-STD-883
12/99A
AA028P1-00
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Untitled
Abstract: No abstract text available
Text: 27–29 GHz GaAs MMIC Power Amplifier AA028P1-00 Features Chip Outline • Single Bias Supply Operation 6 V 1.700 ■ 22 dBm Typical P1 dB Output Power at 28 GHz 1.613 1.371 ■ 13.5 dB Typical Small Signal Gain ■ 0.25 µm Ti/Pd/Au Gates 0.329 0.086 3.400
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AA028P1-00
MIL-STD-883
07/01A
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Untitled
Abstract: No abstract text available
Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha AA032P1-00 Features Chip Outline • Single Gate and Drain Biases o ■ 27 dBm Output Power at 31 GHz ■ 12 dB Small Signal Gain ■ 0.25 im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883
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AA032P1-00
MIL-STD-883
032P1-00
8/98A
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ka band power mmic
Abstract: AA035P2-00 ka band high power fet amplifier schematic
Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 5 P 2 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 26 dBm Output Power at 35 GHz ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883
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OCR Scan
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MIL-STD-883
AA035P2-00
AA035P2-00
2/99A
ka band power mmic
ka band high power fet amplifier schematic
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Untitled
Abstract: No abstract text available
Text: 30-36 GHz GaAs MMIC Power Amplifier ESAlpha A A 0 3 2 P 1 -0 0 Chip Outline Features • Single Gate and Drain Biases ■ 27 dBm Output Power at 31 GHz 0.120 ■ 12 dB Small Signal Gain ■ 0.25 |im Ti/Pd/Au Gates ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883
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OCR Scan
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MIL-STD-883
032P1-00
2/99A
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