c125t
Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-
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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA
005-Lr
DTA114TUA
DTC343TS
-50mA,
f-100MHz
50/1A
rat10
C343T)
c125t
Ho3 501 transistor
dtc323tu
94S-751-C343T
transistor PNP A124G
transistor KD 503
DTC343
kd 2902
kd 503 transistor
DTC143TK
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: F2111B FE3A ISR73 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2111B
REJ09B0163-0100Z
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
F2111B
FE3A
ISR73
Nippon capacitors
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FE3A
Abstract: transistor KD 503 Nippon capacitors kdi switch 2218
Text: REJ09B0163-0100Z 16 H8S/2111B Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2111B Rev.1.00 Revision Date: May. 14, 2004 HD64F2111B Rev. 1.00, 05/04, page ii of xxxiv Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and
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REJ09B0163-0100Z
H8S/2111B
16-Bit
H8S/2100
HD64F2111B
D-85622
FE3A
transistor KD 503
Nippon capacitors
kdi switch 2218
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philips ecg master replacement guide
Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Text: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW
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32R2105RW
32R2110RW
32R2111RW
32R2112RU
32R2124RV
philips ecg master replacement guide
smd transistor WW1
ecg philips semiconductor master book
ww1 transistor smd
philips ecg replacement guide
fcs 9013
ECG transistor replacement guide book free
data sheet NPN 9013
smd marking hry
32R2024
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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H8S-2110B
Abstract: p-qfp100-14x14-0.50 KD 472 M "LPC I/O" addressing modes 8086 cfs 455 a Diode KD 514 FE3A H8S/2110 KD 502
Text: REJ09B0299-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2110B Group Hardware Manual
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REJ09B0299-0200
H8S/2110B
16-Bit
Family/H8S/2100
H8S/2110B
HD64F2110BV
cons730-6071
H8S-2110B
p-qfp100-14x14-0.50
KD 472 M
"LPC I/O"
addressing modes 8086
cfs 455 a
Diode KD 514
FE3A
H8S/2110
KD 502
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kbc 1091
Abstract: SPS10R kdi switch F2110BV Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2110B
REJ09B0299-0200
kbc 1091
SPS10R
kdi switch
F2110BV
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
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FE3A
Abstract: H8S/2110 h8s-2110b TF256
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2110B
FE3A
H8S/2110
h8s-2110b
TF256
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sm 6136 b
Abstract: F2140B MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SM 6136 60227-4 F2145B
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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H8S/2140B
sm 6136 b
F2140B
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
SM 6136
60227-4
F2145B
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F2116BG20V
Abstract: R4F2116 OF798 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2116
F2116BG20V
R4F2116
OF798
Nippon capacitors
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f2116te20v
Abstract: F2116BG20V Diode KD 514 H8S/2116 f2116te 7152 PS2 keyboard PROTOCOL Synchro REJ09B0255-0100 ka bs 89
Text: REJ09B0255-0100 16 H8S/2116Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2116 Rev.1.00 Revision Date: Mar. 02, 2006 R4F2116 Rev. 1.00 Mar. 02, 2006 Page ii of xl Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and
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REJ09B0255-0100
H8S/2116Group
16-Bit
H8S/2100
H8S/2116
R4F2116
or730-6071
H8S/2116
f2116te20v
F2116BG20V
Diode KD 514
f2116te
7152
PS2 keyboard PROTOCOL
Synchro
REJ09B0255-0100
ka bs 89
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F2117LP
Abstract: R4F2117 FZTAT256V3A transistor daa 40 470 D10 Nippon capacitors
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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H8S/2117
REJ09B0350-0300
F2117LP
R4F2117
FZTAT256V3A
transistor daa 40
470 D10
Nippon capacitors
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r4f2117
Abstract: F2117 F2117LP 8086 convertion from decimal to binary program GSM modem M10 f2117lp20v BGA PACKAGE OUTLINE PJ6N gsm modem sim 900 IER16
Text: REJ09B0350-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual
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REJ09B0350-0300
H8S/2117Group
16-Bit
H8S/2100
H8S/2117
R4F2117
H8S/2117
r4f2117
F2117
F2117LP
8086 convertion from decimal to binary program
GSM modem M10
f2117lp20v
BGA PACKAGE OUTLINE
PJ6N
gsm modem sim 900
IER16
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transistor KD 503
Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base
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MRF466
2N5941
transistor KD 503
kd 503 transistor
MRF466
MRF-466
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TESLA KU 602
Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Text: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente
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O-220
TESLA KU 602
TESLA KU 601
tesla ku 611
kd 501
KD 3055
vergleichsliste DDR
kd 616
tungsram
UNITRA
vergleichsliste
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Untitled
Abstract: No abstract text available
Text: h ~p > y X $ / I ransistors 2 S B 9 1 O M 3 8 2 2SB910M/2SB1238 v = r > 's 7 ,j? ^p'tax'a* Planar PNP Silicon Transistors i ’^ ^ J ii'llffl/M e d iu m Power Amp. • 1 Pc = 1 W 0 /D im e n s io n s U n it: mm) t * it 'o 2 )S W IE , VCeo = - 80V, lc = - 0 . 7 A
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2SB910M
2SB1238
2SB910M/2SB1238
2SD1226M,
2SD1859.
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2907
Abstract: N2907A 2N2907 N2907 2n2906 2907 pnp transistor 2907A a 2907 transistor 2907 2906
Text: 'W ' 2 N 2906 * 2 N 2906 A * 2 N 2907 O * 2 N 2907 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und S chalter Applications: A m plifiers and sw itches Features: Besondere Merkmale:
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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221D
Abstract: AM503 AN875 MJF16002 P6302 pd4016
Text: MOTOROLA SC XSTRS/R 4bE F D • b3b725 4 □0^377S 3 MOTOROLA ■MOTb ^ 3 3 Order this data sheet by MJF16002/D - // ■ SEMICONDUCTOR TECHNICAL DATA M JF16002 Designer's Data Sheet Motorola preferred device NPN Silicon P ow er Transistor S w itc h m o d e S e rie s
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MJF16002/D
80Motorola
2PHX23679C-3
MJF16002/D
221D
AM503
AN875
MJF16002
P6302
pd4016
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2T6551
Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Text: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"
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BY236
Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )
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maa 502
Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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