marking KD SOT23
Abstract: KTK5134S
Text: SEMICONDUCTOR KTK5134S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 KD 1 2 Item Marking Description Device Mark KD KTK5134S * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTK5134S
OT-23
marking KD SOT23
KTK5134S
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CMKD3003DO
Abstract: PB CMKD3003DO smd marking KD smd marking diode KD smd marking code 3D c303 diode smd code sot 363 MARKING 3D SOT-363 smd diode c303 3D SOT363
Text: Product Brief CMKD3003DO SOT-363 package 180V, 200mA Dual, Isolated, Opposing Low Leakage Switching Diodes in SOT-363 package CM KD 300 3D O Typical Electrical Characteristics Central Semiconductor’s CMKD3003DO contains two 2 isolated silicon switching diodes configured with opposing polarity in an
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CMKD3003DO
200mA
OT-363
CMKD3003DO
21x9x9
27x9x17
23x23x13
PB CMKD3003DO
smd marking KD
smd marking diode KD
smd marking code 3D
c303 diode
smd code sot 363
MARKING 3D SOT-363
smd diode c303
3D SOT363
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smd diode bd
Abstract: BKC Semiconductors DSAIH0002546
Text: SOT-23 Plastic SMD Applications Schottky Diode bd kd Excellent MOS protection. Efficient portable system battery isolator. Used in small fast motor applications such as CD ROMs and hard disk drives. SOT-23 PACKAGE OUTLINE Features • • • • • all dimensions in milimeters
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OT-23
DO-35
300pSecs
BAT43)
smd diode bd
BKC Semiconductors
DSAIH0002546
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ixtn15n100
Abstract: No abstract text available
Text: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient
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IXTN15N100
OT-227
000E21D
ixtn15n100
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Untitled
Abstract: No abstract text available
Text: ü g ii$ B 4 Í W r o I £ y £ KJ c W c kJ a ti c c O TJ oo I V: SS E ~4_ c t o J, S So v< "S 0.51MIN I UMAX V: “ “ : ? # £ g W MW Bm DIP 18 KO I S -*0 o T) oí 1 V': m • mm i m m w m DIP22 3 3 KD i O m m & m m 2.54 N t•o y y y v u u y y u u g y
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51MIN
DIP22
QFP56-AI
QFP64-B2
QFP64-B3
QFP64-CI
QFP64-DI
QFP64-EI
QFP80-CI
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K 3264 fe
Abstract: FZT853 NPN BH RE
Text: FZT851 FZT853 SOT223 NPN SILICON PLANAR HIGH CURRENT {HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995 - FEATURES * E x tre m e ly lo w e q u iv a le n t o n -re sista n ce; * 6 A m p s c o n tin u o u s c u rre n t, up to 20 A m p s peak c u rre n t
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OT223
FZT851
FZT853
FZT853
FZT951
FZT953
K 3264 fe
NPN BH RE
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cb 10 b 60 kd
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES O * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent hFE specified up to 10 Amps PARTMARKING DETAIL -
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OT223
FZT855
FZT955
FZT855
cb 10 b 60 kd
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * * H igh V CE0 L o w s a tu ra tio n vo lta g e C O M PLEM ENTAR Y TYPE: - BSP20 PAR TM ARKING DETAIL: - BSP15 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L VALUE UNIT C o lle c to r-B a s e V o lta g e
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OT223
BSP20
BSP15
-175V
20MHz
300fis.
FMMTA92
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FZT867
Abstract: 3268
Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTOR ISSUE 3 - FEBRUARY 1996 O FZT857 - FEATURES * Up to 3.5 Amps continuous collector current, up to 5 Amp peak * V CEO = 3 0 0 V * Very low saturation voltage * Excellent hFEspecified up to 3 Amps
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OT223
FZT857
FZT867
FZT957
3268
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 BCP54 O FEATURES * S u ita b le fo r AF d riv e rs a nd o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat| CO M PLEM ENTAR Y TYPE PARTM ARKING DETAILS - BCP51 BCP54
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OT223
BCP51
BCP54
BCP54
BCP54-10
BCP54-16
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KD transistor
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e
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BSS64
BSS63
BSS64
BSS64R
300us.
KD transistor
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996 BFN36 Q_ _ FEATURES: * High VCE0 and Low saturation voltage APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE - BFN37
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OT223
BFN36
BFN37
-100aA
100ttA
300jis.
FMMTA42
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO
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OT223
FZT560
-100m
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e
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OT223
BSP16
-100nA
-280V
300fis.
FMMTA92
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Untitled
Abstract: No abstract text available
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10
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OT223
BCP55
BCP52
-10DpA
-500m
-150m
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Untitled
Abstract: No abstract text available
Text: SOT223 PIMP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * For AF d riv e rs and o u tp u t stages 4 H igh c o lle c to r c u rre n t a nd Lo w Vr&1 C O M PLEM ENTARY TYPE BCP68 PARTM ARKING DETAIL BCP69 BCP69 - 25 ABSOLUTE MAXIMUM RATINGS.
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OT223
BCP68
BCP69
-r150
-10uA
-500m
-100m
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - FEBRUARY 1995 O_ FEATURES * High g a in a nd lo w s a tu ra tio n v o lta g e s CO M PLEM ENTARY TYPE - BCX69 PARTM ARKING D ETAIL- BCX68 - CE BCX68-16 -C C BCX68-25 -C D ABSOLUTE MAXIMUM RATINGS.
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BCX69
BCX68
BCX68-16
BCX68-25
300us.
FMMT449
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JANUARY 1996 BFN38 Q_ FEATURES: * H igh V CE0 and L o w sa tu ra tio n vo lta g e APPLICATIONS: * S u ita b le fo r v id e o o u tp u t stages in TV sets * S w itc h in g p o w e r s u p p lie s
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OT223
BFN38
BFN39
100uA
iJmb-150
FMMTA42
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C1002
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 C O M P L E M E N T A R Y TY P E S - O B S P 40 - B SP 30 B S P 42 - B SP 32 P A R T M A R K IN G D E T A IL - D e v ic e ty p e in fu ll ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL
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OT223
BSP40
BSP42
C1002
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LC-1
Abstract: SY SOT23
Text: "SuperSOT" SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR ISSUE 1 - APRIL 97 FEATURES * 625m W POWER DISSIPATION H ighest c u rre n t c a p a b ility SOT23 D a rlin g to n Very h igh hFE - sp e cifie d at 2A 5K m in im u m - ty p ic a lly 600 at 5A COM PLEM ENTARY TYPE - F M M T734
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300us.
FMMT634
LC-1
SY SOT23
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fzt591
Abstract: FZT491A FZT591A
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES L o w e q u iv a le n t on resistance RCE sat = 350m PART M ARKING DETAIL - FZT591A C O M PLEM ENTAR Y TYPE - FZT491A at 1A ABSOLUTE M A X IM U M RATINGS. PARAMETER
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OT223
FZT591A
FZT491A
-50mA*
-100mA*
-500mA*
-50mA,
100MHz
FZT591A
100mA
fzt591
FZT491A
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lb220
Abstract: No abstract text available
Text: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ISSUE 1 - NOVEMBER 1995 c-i CXT fin Ci EZEI [ = □ El c2 H U ZO b2 C jfT ¡T O e2 b, 1 SM-8 !8 LEAD SOT223 PARTMARKING DETAIL - T758 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o lle cto r-B a se V o lta g e
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ZDT758
OT223)
-100m
-200m
-100V
lb220
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S2555
Abstract: No abstract text available
Text: SM-8 DUAL NPN MEDIUM POWER TRANSISTORS ZDT651 ISSUE 1 - NOVEMBER 1995 Cl 1- ! 1 Bi C ,L J — ~ n Ei C2 •—L- h~i b2 c? lH Ë2 SM-8 8 LEAD SOT2Z3Ì PARTMARKING DETAIL - T651 ABSOLUTE MAXIMUM RATINGS. SYM BO L PARAMETER C o lle c to r-B a s e V o lta g e
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ZDT651
300ns.
S2555
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NPN BH RE
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP56T1 SERIES NPN Silicon E pitaxial TVansistor M otorola Preferred Dev tee These NPN Silicon Epitaxial transistors are designed tor use in audio amplifier applications. The device is housed in the SOT-223 package, which is
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OT-223
BCP56T1
inch/1000
BCP56T3
inch/4000
BCP53T1
NPN BH RE
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