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    KDV273UL Datasheets (1)

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    KDV273UL Korea Electronics VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND Original PDF

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		KDV273UL 470MHz PDF

    KDV273UL

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES ・High Capacitance Ratio : C1V/C4V =2.0 Typ. C ・Low Series Resistance : rs=0.39Ω(Typ.) A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC


    Original     		KDV273UL 470MHz KDV273UL PDF

    vr 1K

    Abstract: KDV273UL
    Text: SEMICONDUCTOR KDV273UL TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. TENTATIVE FEATURES High Capacitance Ratio : C1V/C4V =2.0 Typ. Low Series Resistance : rs=0.39 (Typ.) C MAXIMUM RATING (Ta=25 CHARACTERISTIC


    Original     		KDV273UL 470MHz vr 1K KDV273UL PDF