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    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G ELECTRONICS CMOS Mask ROM 8M-Bit (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :100ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 fiA (max.)


    OCR Scan     		PDF KM23C8000B 100ns KM23C8000B 32-DIP-600 KM23C8000BG 32-SOP-525 576x8bit.

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C8000B 576x8 100ns 50/iA 32-pin, asynM23C80006 KM23C8000B)

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> • 7 ^ 4 1 4 5 0D17D30 DbT I SMGK KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using


    OCR Scan     		PDF 0D17D30 KM23C8000B 100ns 32-pin, 0D17D33 KM23C8000B) KM23C8000BG)