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    KM44V16104B Search Results

    KM44V16104B Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44V16104BK-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BK-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-5 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-L-45 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM44V16104BS-L-6 Samsung Electronics 16M x 4-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM44V16104B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3125uS

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


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    KM44V16004B, KM44V16104B 16Mx4 400mil 3125uS PDF

    km44v161

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


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    KM44V16004B, KM44V16104B 16Mx4 400mil km44v161 PDF

    KMM372F3200BS1

    Abstract: KMM372F3280BS1 KM44V16104
    Text: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


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    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin KMM372F3200BS1 KMM372F3280BS1 KM44V16104 PDF

    KMM372F1600BK

    Abstract: KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK
    Text: KMM372F160 8 0BK/BS DRAM MODULE KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0B consists of eighteen CMOS 16Mx4bits


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    KMM372F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F160 8 0BK3 Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM366F160(8)0BK3


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    KMM366F160 16Mx4, 16Mx64bits 16Mx4bits PDF

    kmm372f3200bk4

    Abstract: No abstract text available
    Text: KMM372F320 8 0BK4 DRAM MODULE KMM372F320(8)0BK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0BK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0BK4 consists of thirty-six CMOS 16Mx4bits


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    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin kmm372f3200bk4 PDF

    KMM372F3200BS1

    Abstract: KMM372F3280BS1
    Text: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


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    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin KMM372F3200BS1 KMM372F3280BS1 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374F160 8 0BK3 DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS. KMM374F160(8)0BK3 DRAM MODULE KMM374F160(8)0BK3 EDO Mode without buffer


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    KMM374F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin PDF

    80BK1

    Abstract: No abstract text available
    Text: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0BK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung


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    KMM374F160 16Mx4, 16Mx72bits 16Mx4bits 400mil 168-pin 80BK1 PDF

    KMM372F3280BS1

    Abstract: KMM372F3200BS1
    Text: KMM372F320 8 0BS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6


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    KMM372F320 100Min 540Min) 150Max 81Max) 16Mx4 KMM372F3200BS1 KM44V16104BS. KMM372F3280BS1- KM44V16004BS. KMM372F3280BS1 PDF

    TAA 151

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits


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    KMM366F160 16Mx4, 16Mx64bits 16Mx4bits 400mil 168-pin TAA 151 PDF

    KMM372F3200BK3

    Abstract: KMM372F3280BK3
    Text: KMM372F320 8 0BK3 DRAM MODULE KMM372F320(8)0BK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B consists of thirty-six CMOS 16Mx4bits


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    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin KMM372F3200BK3 KMM372F3280BK3 PDF

    KMM372F3200BK3

    Abstract: KMM372F3280BK3
    Text: KMM372F320 8 0BK3 DRAM MODULE KMM372F320(8)0BK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B consists of thirty-six CMOS 16Mx4bits


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    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin KMM372F3200BK3 KMM372F3280BK3 PDF

    BS 050 transistor

    Abstract: No abstract text available
    Text: KMM374F160 8 0BK/BS DRAM MODULE Unbuffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F160(8)0BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.


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    KMM374F160 16Mx72 16Mx4 16Mx4, BS 050 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal


    OCR Scan
    KM44V16004B, KM44V16104B 16Mx4 PDF

    44v16104

    Abstract: No abstract text available
    Text: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al


    OCR Scan
    KM44V16004B, KM44V16104B 16Mx4 400mil 44v16104 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits


    OCR Scan
    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin PDF

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan
    KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16 PDF

    KM44C4105C-6

    Abstract: KM44C16004
    Text: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7


    OCR Scan
    KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F320 8 0BK4 DRAM MODULE KMM372F320(8)0BK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0BK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0BK4 consists of thirty-six CMOS 16Mx4bits


    OCR Scan
    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KM M 3 7 2 F 1 60 8 0B K/B S DRAM M ODULE KM M 372F1 60(8) 0BK/ BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FE A TU R ES G E N E R A L DE SCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module.


    OCR Scan
    372F1 16Mx4, KMM372F160 16Mx72bits 16Mx4bits 400mil 168-pin KMM372F1600BK PDF

    KM44V16104BK

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits


    OCR Scan
    KMM366F160 16Mx4, 16Mx64bits 16Mx4bits 400mil 168-pin KM44V16104BK PDF

    k2624

    Abstract: No abstract text available
    Text: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#


    OCR Scan
    KM41C4000D# C4000D KM41V4000D# KM41V4000W-L KM44C1000D# KM44C10OOD KM44C1003D# KM44C1004D# KM44C1004D KM44C1005D# k2624 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM372F320 8 0BK4 DRAM MODULE KMM372F320(8)0BK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0BK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0BK4 consists of thirty-six CMOS 16Mx4bits


    OCR Scan
    KMM372F320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin PDF