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    KM48V2104 Search Results

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    KM48V2104 Price and Stock

    Samsung Semiconductor KM48V2104CS60

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    Bristol Electronics KM48V2104CS60 331
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    Samsung Semiconductor KM48V2104CK-6

    2MX8 EDO DRAM, 60NS, PDSO28
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    Quest Components KM48V2104CK-6 20,147
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    Samsung Semiconductor KM48V2104CK-L6

    2M X 8 EDO DRAM, 60 ns, PDSO28
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    Quest Components KM48V2104CK-L6 81
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    KM48V2104 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48V2104CK-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CK-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CK-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CK-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CS-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CS-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CS-L-5 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF
    KM48V2104CS-L-6 Samsung Electronics 2M x 8-Bit CMOS Dynamic RAM with Extended Data Out Original PDF

    KM48V2104 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2004C

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original
    PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil C2004C

    km48c2104

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original
    PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C ad04C, 300mil km48c2104

    km48v2104bs

    Abstract: KM48V2104BK KM48V2104B
    Text: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213B


    Original
    PDF KMM372F213BK/BS KMM372F213BK/BS KMM372F213B 2Mx72bits KMM372F213B 300mil 16bits 48pin 168-pin km48v2104bs KM48V2104BK KM48V2104B

    KMM372F213CK

    Abstract: KMM372F213CS
    Text: DRAM MODULE KMM372F213CK/CS KMM372F213CK/CS EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F213C is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213C consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II


    Original
    PDF KMM372F213CK/CS KMM372F213CK/CS KMM372F213C 2Mx72bits KMM372F213C 300mil 16bits 48pin 168-pin KMM372F213CK KMM372F213CS

    C2004A

    Abstract: KM48C2104A C2104A C2104 km48v2104a
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


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    PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A b4142 C2004A KM48C2104A C2104A C2104 km48v2104a

    A10CE

    Abstract: OYNN KM48C2104B km4e KM48V2104B
    Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power


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    PDF KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B A10CE OYNN km4e KM48V2104B

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


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    PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A 002D323

    Untitled

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


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    PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C

    Untitled

    Abstract: No abstract text available
    Text: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 48 V 2 104 A /A L/A LL /A S L is a high spe ed C M O S 2,0 9 7 ,1 5 2 b i t x 8 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high


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    PDF KM48V2104A/AL/ALL/ASL KM48V2104A/AL/ALL/ASL-6 110ns KM48V2104A/AL/ALL/ASL-7 130ns KM48V2104A/AL/ALL/ASL-8 150ns 28-LEAD GD11bl3

    KM48C2104B

    Abstract: No abstract text available
    Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power


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    PDF KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B KM48C2104B

    TAA 981

    Abstract: km48v2104a KM48V2104 DZ22A KM48V2104AL
    Text: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC KM48V2104A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM48V2104A/AL/ALL/ASL-7 70ns 20ns 130ns 29ns KM48V2104A/AL/ALIVASL-8


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    PDF KM48V2104A/AL/ALL/ASL 110ns 130ns 150ns KM48V2104A/AL/ALL/ASL-6 KM48V2104A/AL/ALL/ASL-7 KM48V2104A/AL/ALIVASL-8 KM48V2104A/AL/ALL/ASL TAA 981 km48v2104a KM48V2104 DZ22A KM48V2104AL

    C2004A

    Abstract: KM48C2104A
    Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 2 ,0 97 ,1 5 2 x 8 bit E xtended Data O ut C M O S DRAM s. E xtended D ata O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Pow er supply


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    PDF KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A C2004A

    C2104C

    Abstract: No abstract text available
    Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


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    PDF KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C 64ms/32ms C2104C

    Untitled

    Abstract: No abstract text available
    Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The


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    PDF KMM374F203BK KMM374F213BK KMM374F213BK 2Mx72 KMM374F20 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF 16Mx4, 512Kx8) KM48C2104BK) KM48C2104BK 7ib414E

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


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    PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


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    PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


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    PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    KM48V2104BS-L

    Abstract: km48v2104bs
    Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The


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    PDF KMM332F203BS-L KMM332F213BS-L KMM332F203BS-L KMM332F213BS-L 2Mx32 KMM332F20 72-pin 332F20 KM48V2104BS-L km48v2104bs

    Untitled

    Abstract: No abstract text available
    Text: STI642004G1 -70 VG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 1 1 tCAC 70ns 20ns *RC ^HPC 124ns 30ns The Simple Technology STI642004G1-70VG is a 2M x 64 bits Dynamic RAM high density memory module. The Simple


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    PDF STI642004G1 144-PIN 124ns STI642004G1-70VG 28-pin 400-mil STI642004G1-70

    Untitled

    Abstract: No abstract text available
    Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V G ENERAL D ESCRIPTIO N FEATURES The Samsung KM M374F20 1 3B is a 2M bit x 72 Dynam ic RAM high density m em ory module. The


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    PDF KMM374F203B KMM374F213BK KMM374F203BK KMM374F213BK 2Mx72 KMM374F20 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF 16Mx4, 512Kx8) KM48C2104BS

    Untitled

    Abstract: No abstract text available
    Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The


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    PDF KMM466F203BS-L KMM466F213BS-L KMM466F213BS-L 2Mx64 KMM466F20 cycles/128ms,