C2004C
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
ad04C,
300mil
C2004C
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km48c2104
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
ad04C,
300mil
km48c2104
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km48v2104bs
Abstract: KM48V2104BK KM48V2104B
Text: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213B
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KMM372F213BK/BS
KMM372F213BK/BS
KMM372F213B
2Mx72bits
KMM372F213B
300mil
16bits
48pin
168-pin
km48v2104bs
KM48V2104BK
KM48V2104B
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KMM372F213CK
Abstract: KMM372F213CS
Text: DRAM MODULE KMM372F213CK/CS KMM372F213CK/CS EDO Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F213C is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F213C consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II
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KMM372F213CK/CS
KMM372F213CK/CS
KMM372F213C
2Mx72bits
KMM372F213C
300mil
16bits
48pin
168-pin
KMM372F213CK
KMM372F213CS
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C2004A
Abstract: KM48C2104A C2104A C2104 km48v2104a
Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
b4142
C2004A
KM48C2104A
C2104A
C2104
km48v2104a
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A10CE
Abstract: OYNN KM48C2104B km4e KM48V2104B
Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power
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KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
A10CE
OYNN
km4e
KM48V2104B
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Untitled
Abstract: No abstract text available
Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
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KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
002D323
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Untitled
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
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Untitled
Abstract: No abstract text available
Text: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 48 V 2 104 A /A L/A LL /A S L is a high spe ed C M O S 2,0 9 7 ,1 5 2 b i t x 8 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high
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KM48V2104A/AL/ALL/ASL
KM48V2104A/AL/ALL/ASL-6
110ns
KM48V2104A/AL/ALL/ASL-7
130ns
KM48V2104A/AL/ALL/ASL-8
150ns
28-LEAD
GD11bl3
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KM48C2104B
Abstract: No abstract text available
Text: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2 M x 8 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Extended Data O ut CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin th e sam e row, so called H yper P age M ode. Power
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KM48C2004B,
KM48C2104B
KM48V2004B,
KM48V2104B
KM48C2104B
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TAA 981
Abstract: km48v2104a KM48V2104 DZ22A KM48V2104AL
Text: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC KM48V2104A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM48V2104A/AL/ALL/ASL-7 70ns 20ns 130ns 29ns KM48V2104A/AL/ALIVASL-8
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KM48V2104A/AL/ALL/ASL
110ns
130ns
150ns
KM48V2104A/AL/ALL/ASL-6
KM48V2104A/AL/ALL/ASL-7
KM48V2104A/AL/ALIVASL-8
KM48V2104A/AL/ALL/ASL
TAA 981
km48v2104a
KM48V2104
DZ22A
KM48V2104AL
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C2004A
Abstract: KM48C2104A
Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 2 ,0 97 ,1 5 2 x 8 bit E xtended Data O ut C M O S DRAM s. E xtended D ata O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Pow er supply
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KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
C2004A
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C2104C
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
64ms/32ms
C2104C
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Untitled
Abstract: No abstract text available
Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The
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KMM374F203BK
KMM374F213BK
KMM374F213BK
2Mx72
KMM374F20
300mil
168-pin
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B K CMOS DRAM ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM48C2104BK)
KM48C2104BK
7ib414E
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VG264265B
Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D
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256kxl6
256kxl6,
VG264265B
HM514265D
HY514264B
MT4C16270
uPD4244265LE
KM416C254D
TC5144265D
TC5117405CSJ
hyundai
cross reference guide
TC51V16160
Micron 4MX32 EDO SIMM
dram cross reference
cross reference
tc5117800cft
SAMSUNG Cross Reference
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4MB DRAM
Abstract: 4MX16 1MX16
Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .
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KM41C4000D/KM41V4000D.
KM44C1000D/KM44V1000D.
KM44C1003D
-KM44C1004D/KM44V1004D.
KM44C1005D
-KM48C512D/KM48V512D.
KM48C512D
4MB DRAM
4MX16
1MX16
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KM44C4000aS 6
Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6
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KM41C4000C-5
KM41C4000CL-5
KM41C4002C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000CL-7
KM41C4002C-7
KM41V4000C-7
KM41V4000CL-7
KM41C4000C-8
KM44C4000aS 6
KM44C4000AS
KM44C4000A-S
km44c4100as
KM48V2100AL
KM416V256BL
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23
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KM41C1000D
KM44C256D.
KM41C4000C
KM41V4000C.
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KM48V2104BS-L
Abstract: km48v2104bs
Text: KMM332F203BS-L KMM332F213BS-L DRAM MODULE KMM332F203BS-L & KMM332F213BS-L Fast Page with EDO Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM332F20 1 3BS is a 2M bit x 32 D ynam ic RAM high density m em ory module. The
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KMM332F203BS-L
KMM332F213BS-L
KMM332F203BS-L
KMM332F213BS-L
2Mx32
KMM332F20
72-pin
332F20
KM48V2104BS-L
km48v2104bs
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Untitled
Abstract: No abstract text available
Text: STI642004G1 -70 VG 144-PIN SO-DIMMS 2M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tRAC 1 1 tCAC 70ns 20ns *RC ^HPC 124ns 30ns The Simple Technology STI642004G1-70VG is a 2M x 64 bits Dynamic RAM high density memory module. The Simple
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STI642004G1
144-PIN
124ns
STI642004G1-70VG
28-pin
400-mil
STI642004G1-70
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Untitled
Abstract: No abstract text available
Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V G ENERAL D ESCRIPTIO N FEATURES The Samsung KM M374F20 1 3B is a 2M bit x 72 Dynam ic RAM high density m em ory module. The
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KMM374F203B
KMM374F213BK
KMM374F203BK
KMM374F213BK
2Mx72
KMM374F20
300mil
168-pin
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Untitled
Abstract: No abstract text available
Text: K M 4 8 C 2 10 4 B S CMOS D R A M ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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16Mx4,
512Kx8)
KM48C2104BS
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The
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KMM466F203BS-L
KMM466F213BS-L
KMM466F213BS-L
2Mx64
KMM466F20
cycles/128ms,
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