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    ARCOTEK KM681002BJ-10T

    SRAM ASYNC FAST 1M 128Kx8 5V 32-
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    DigiKey KM681002BJ-10T Reel 100
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    Samsung Semiconductor KM681002BJ-10

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    Bristol Electronics KM681002BJ-10 4,464
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    Quest Components KM681002BJ-10 10,100
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    SEC KM681002BJ-10T

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    Bristol Electronics KM681002BJ-10T 2,768
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    Samsung Semiconductor KM681002AJ-12

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    Bristol Electronics KM681002AJ-12 86
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    Quest Components KM681002AJ-12 83
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    Samsung Semiconductor KM681002J-15

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    Bristol Electronics KM681002J-15 40
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    Quest Components KM681002J-15 1,156
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    KM681002J-15 32
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    KM681002J-15 5
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    KM681002 Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681002A Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002A-12 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002A-15 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002A-20 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002AI Samsung Electronics Original PDF
    KM681002AI-12 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002AI-15 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002AI-20 Samsung Electronics 128K x 8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Original PDF
    KM681002AIJ-12 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AIJ-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AIJ-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AIT-12 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AIT-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AIT-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AJ-12 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AJ-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AJ-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681002AJI-12 Samsung Electronics 128K x 8 high speed static RAM, 5V operating, 12ns Original PDF
    KM681002AJI-15 Samsung Electronics 128K x 8 high speed static RAM, 5V operating, 15ns Original PDF
    KM681002AJI-20 Samsung Electronics 128K x 8 high speed static RAM, 5V operating, 20ns Original PDF

    KM681002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114 PDF

    KM681002

    Abstract: No abstract text available
    Text: CMOS SRAM KM681002 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby CTTL) : 40mA (Max.) ' (CMOS): 10mA (Max.) Operating : KM681002-15: 170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		KM681002 KM681002-15: 170mA KM681002 160mA 150mA KM681002J 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: R reïir'ine;-/ CMOS SRAM KM681002B/BL, KM681002BI/BLI 128K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»« Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) The KM681002B/BL is a 1,048,576-bit high-speed Static Ran­


    OCR Scan     		KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO KM681002B/BLSJ 32-SOJ-300 KM681002B/BLT: PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM681002A 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (T T l) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-4Ã KM681002AT: 32-TSOP2-4QOF KM681002A PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002-15:170mA (Max.) KM681002 -17: 160mA (Max.)


    OCR Scan     		KM681002 KM681002-15 170mA KM681002 160mA KM681002-20: 150mA KM681002J 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: F re îir'in & y KM681002B/BL, KM681002BI/BLI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 8,10,12»» Max. •• Low Power Dissipation Standby (TTL) : 30* • (Max.) (C M O S): 10* (Max.) 1* (Max.) - L-Ver. only


    OCR Scan     		KM681002B/BL, KM681002BI/BLI KM681002B/BL KM681002B/BL- KM681002B/BLJ 32-SOJ-4QO 32-SO J-300 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 131,072 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002 -15: 170mA (Max.) KM681002-17: 160mA (Max.)


    OCR Scan     		KM681002 KM681002 170mA KM681002-17: 160mA KM681002-20: 150mA KM681002J 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION CMOS SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)


    OCR Scan     		KM681002A KM681002A-12 185mA KM681002A-15: 165mA KM681002A-17: 145mA KM681002A-20 125mA KM681002AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002 CMOS SRAM 131,072 WORD x 8 Bit Highspeed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.) (CMOS): 10mA (Max.) Operating : KM681002J-15:170mA (Max.)


    OCR Scan     		KM681002 KM681002J-15 170mA KM681002J-17: 160mA KM681002J-20: 150mA KM681002J: 32-Pin KM681002 PDF

    KM681002C

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002C/CL, KM681002CI/CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    Original     		KM681002C/CL, KM681002CI/CLI 128Kx8 32-TSOP2-400F 002MIN KM681002C PDF

    KM681002B

    Abstract: KM681002B-10 KM681002B-8
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM681002B, KM681002BI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    Original     		KM681002B, KM681002BI 128Kx8 32-SOJ-300 32-TSOP2-400F 002MIN KM681002B KM681002B-10 KM681002B-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002A, KM681002AI CMOS SRAMI Document Title 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM681002A, KM681002AI 128Kx8 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM The KM681002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM 681002 uses eight com m on input and output lines and has an output enable pin w hich operates


    OCR Scan     		KM681002 KM681002-17 KM681002-20 681002J: 32-SQJ-400 KM681002 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION > Fast Access Tim e 12,15,17.20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA KM681002A-15 : 190 mA


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-4QOF KM681002A PDF

    KM681002A

    Abstract: KM681002A-12 KM681002A-15 KM681002AI 300mil-SOJ
    Text: PRELIMINARY KM681002A, KM681002AI CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		KM681002A, KM681002AI 128Kx8 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA 32-TSOP2-400F 047MAX 002MIN KM681002A KM681002A-12 KM681002A-15 KM681002AI 300mil-SOJ PDF

    KM681002A

    Abstract: KM681002A-12 KM681002A-15 KM681002A-20
    Text: CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.) KM681002A-15 : 190 mA (Max.)


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A KM681002A-12 KM681002A-15 KM681002A-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM681002B/BL, KM681002BI/BLI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.


    OCR Scan     		KM681002B/BL, KM681002BI/BLI 128Kx8 32-SOJ-300 32-SOJ-400 32-TSOP2-400F PDF

    KM681002B

    Abstract: KM681002B-10 KM681002B-8 SRAM sheet samsung
    Text: PRELIMINARY Preliminary PRELIMINARY CMOS SRAM KM681002B, KM681002BI Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.


    Original     		KM681002B, KM681002BI 128Kx8 32-SOJ-300 32-TSOP2-400F 047MAX 002MIN KM681002B KM681002B-10 KM681002B-8 SRAM sheet samsung PDF

    KM681002A

    Abstract: KM681002A-12 KM681002A-15 KM681002A-20
    Text: ADVANCED INFORMATION CM O S SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)


    OCR Scan     		KM681002A KM681002A-12 185mA KM681002A-15 165mA KM681002A-17 145mA KM681002A-20 125mA KM681002AJ KM681002A KM681002A-12 KM681002A-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002C/CL, KM681002CI CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		KM681002C/CL, KM681002CI 128Kx8 32-SOJ-400 32-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith D esign T a rge t.


    OCR Scan     		KM681002B, KM681002BI 128Kx8 32-SOJ-400 32-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM 28K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TO.) : 50mA(Max.) (CM O S) : 10mA(Max.) Operating K M 681 002B -8 :160mA(Max.) KM681002B - 1 0 : 155mA(Max.)


    OCR Scan     		KM681002B, KM681002BI 160mA KM681002B 155mA 150mA KM681002BJ 32-SQJ-400 KM681Q02BT: PDF

    KM681002J-15

    Abstract: KM681002J-20 256X8 KM681002J-17 samsung chip 820
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM681002 0017bñ4 72b PRELIMINARY SMGK CMOS SRAM 131,072 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (Max.)


    OCR Scan     		KM681002 0017bà KM661002J-15: 170mA KM681002J-17: 160mA KM641002J-20: KM681002J: 32-Pin 256X8 KM681002J-15 KM681002J-20 KM681002J-17 samsung chip 820 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002C/CL, KM681002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		KM681002C/CL, KM681002CI/CLI 128Kx8 32-SOJ-400 32-TSOP2-400F I0-050I PDF