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    KM718V990 Search Results

    KM718V990 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM718V990-10 Samsung Electronics 512K x 18-Bit Synchronous Pipelined Burst SRAM Original PDF
    KM718V990-72 Samsung Electronics 512K x 18-Bit Synchronous Pipelined Burst SRAM Original PDF
    KM718V990-85 Samsung Electronics 512K x 18-Bit Synchronous Pipelined Burst SRAM Original PDF

    KM718V990 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM718V990

    Abstract: KM736V890
    Text: KM736V890 KM718V990 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 07 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original
    PDF KM736V890 KM718V990 256Kx36 512Kx18 512Kx18-Bit 119BGA 110mA 100mA KM718V990 KM736V890

    KM718V990

    Abstract: KM736V890
    Text: KM736V890 KM718V990 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft May. 07 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original
    PDF KM736V890 KM718V990 256Kx36 512Kx18 512Kx18-Bit 119BGA 110mA 100mA KM718V990 KM736V890

    KM718V990

    Abstract: KM736V890
    Text: KM736V890 KM718V990 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. Draft Date History Remark 0.0 Initial draft May. 07 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    Original
    PDF KM736V890 KM718V990 256Kx36 512Kx18 512Kx18-Bit 119BGA 110mA 100mA KM718V990 KM736V890

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original
    PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original
    PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: KM736V890 KM718V990 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 History Initial draft Draft Date Remark May. 07 . 1998 Prelim inary 0.1 M odify DC characteristics Input Leakage Current test Conditions


    OCR Scan
    PDF KM736V890 KM718V990 256Kx36 512Kx18 512Kx18-Bit 119BGA 1024K

    Untitled

    Abstract: No abstract text available
    Text: KM736V890 KM718V990 PRELIMINARY 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Rev. No. History Draft Date Remark 0.0 Initial draft May. 07 . 1998 Preliminary 0.1 Modify DC characteristics Input Leakage Current test Conditions


    OCR Scan
    PDF KM736V890 KM718V990 256Kx36 512Kx18 512Kx18-Bit 119BGA 110mA 100mA