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    Samsung Semiconductor KMM374S823BTL-G0

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    KMM374S823BTL Datasheets Context Search

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    KM48S8030BT-G10

    Abstract: KM48S8030BT KM48S8030BT-G
    Text: KMM374S823BTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S823BTL 200mV. 66MHz KM48S8030BT-G10 KM48S8030BT KM48S8030BT-G

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    Abstract: No abstract text available
    Text: Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL_ Revision History Revision .l N ovem ber 1997 This spec has changed in accordance with New Binning [s F ' ELECTRO ftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM374S823BTL


    OCR Scan     		PDF KMM374S823BTL_ KMM374S823BTL KMM374S823BTL 8Mx72 374S823BTL 400mil 168-pin 150Max 48S8030BT

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    Abstract: No abstract text available
    Text: KMM374S823BTL PC66 SDRAM MODULE KMM374S823BTL SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BTL is a 8M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S823BTL KMM374S823BTL 8Mx72 400mil 168-pin

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT