SPDT FETs
Abstract: DR65-0001 SWD-119 small signal GaAs FET SW SPDT AT-220 MASW4030G MASW6010G SW-313 SWD-109
Text: An ASIC Driver for GaAs FET Control Components This application note covers driver selection and circuit design for FET switches and attenuators, including non-linear performance as Vopt is varied By Christopher Weigand M/A-COM, Inc. he use of a plastic packaged ASIC driver
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SWD-109)
SWD-119
DR65-0001)
SPDT FETs
DR65-0001
small signal GaAs FET
SW SPDT
AT-220
MASW4030G
MASW6010G
SW-313
SWD-109
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M517
Abstract: MASW6010 54LS04 MESFET
Text: Application Note MASW6010* GaAs SPDT MMIC Switch Performance and Driver Circuit Techniques MMIC SPDT Switch Design MASW6010 RF The MASW6010 is based on the use of MetalSemiconductor Field Effect Transistors MESFET as the active elements. As shown in the schematic of Figure la,
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MASW6010*
MASW6010
MC10H350.
MC10H350
IN4148.
M517
54LS04
MESFET
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f25k
Abstract: No abstract text available
Text: ERICSSON ^ September 1989 PBM 3911 Voice-switched Speakerphone Circuit Description The PBM 3911 is a CMOS integrated circuit, designed for voice switched speaker phone systems. The circuit incorporates complementary digitally controlled attenuators for the necessary half duplex behavior, microphone and receive amplifiers, transmit
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S-164
f25k
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Untitled
Abstract: No abstract text available
Text: ERICSSON COMPONENTS AB ERICSSON lb E D • 3 3 7 3 3 m OOPltMä IbS ■ E R I C ^ September 1989 - 7 5 - 0 1 - I S PBM 3911 Voice-switched Speakerphone Circuit Description
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S-164
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A-04
Abstract: PBM3911 ericsson switch
Text: ERICSSON COMPONENTS AB ERICSSON lb E D • 33733m OOPltMä IbS ■ E R I C ^ September 1989 T -7 5 -0 1 -IS PBM 3911 Voice-switched Speakerphone Circuit Description Key Features The PBM 3911 is a CMOS integrated circuit, designed for voice switched speaker
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33733m
T-15-01-15
S-164
A-04
PBM3911
ericsson switch
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v02.0402 FLOATING GROUND SPNT MMIC SWITCH DRIVER TECHNIQUES Positive Voltage Control of MMIC
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mid-1990â
HMC165S14
HMC182S14
HMC172QS24
HMC183QS24
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um86409
Abstract: um86409 Datasheet RF encoder um86409 TX433 circuit diagram of rf transmitter and receiver long distance UM53200 TX433boost UM3750 mm53200 module aurel
Text: ASSEMBLING INSTRUCTIONS FT151 FT151 LONG DISTANCE REMOTE CONTROL TRANSMITTER 400 mW POWER Single channel 433,92 MHz remote control coded MM53200 (4.096 combinations) set with 12 dip-switches. Equipped with an Aurel 400 mW output hybrid RF module (TX433Boost). To be used as an alarm or longdistance remote control systems. Driving the
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FT151
MM53200
TX433Boost)
FT152,
1N4007
UM86409
MM53200)
um86409
um86409 Datasheet
RF encoder um86409
TX433
circuit diagram of rf transmitter and receiver long distance
UM53200
TX433boost
UM3750
mm53200
module aurel
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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HMC182S14
Abstract: fet rf 2001 74HCT04 HMC165S14 HMC172QS24 HMC183QS24 kohm RF Switch RF FET TRANSISTOR 3 GHZ SIGNAL PATH designer
Text: MICROWAVE CORPORATION FLOATING GROUND SPNT MMIC SWITCH DRIVER TECHNIQUES FEBRUARY 2001 Positive Voltage Control of MMIC Multi-Throw Switches with Floating Ground Technique Hittite Microwave Corporation developed multi-throw switches with on-board-decoders in the mid-1990’s. The Hittite Microwave SPNT switch product line includes
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mid-1990
HMC165S14
HMC182S14
HMC172QS24
HMC183QS24
fet rf 2001
74HCT04
HMC165S14
HMC172QS24
kohm RF Switch
RF FET TRANSISTOR 3 GHZ
SIGNAL PATH designer
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crl 452
Abstract: sound detector circuit using OP-AMP LM13080 PBM3912
Text: ERICSSON ^ September 1989 PBM 3912 Voice-switched Speakerphone Circuit Description Key Features The PBM 3912 is a CMOS integrated circuit, designed for voice switched speaker phone systems. Filtering possibilities and individual gain setting in the control channel
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S-164
crl 452
sound detector circuit using OP-AMP
LM13080
PBM3912
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Untitled
Abstract: No abstract text available
Text: CMH82 Preliminary Datasheet ? High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process CDMA ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -12.0 to 0 dBm IF LNA ? Operating voltage range: 2.7 to 4 V
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CMH82
VQFN-20
CMH82
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PBL38814
Abstract: No abstract text available
Text: ERICSSON ^ Preliminary July 1997 PBL388 14 Voice-switched Speakerphone Circuit Key Features Description The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,
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PBL388
1522-PBL
S-164
PBL38814
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CMH82
Abstract: MMIC code -03
Text: GaAs MMIC CMH82 Preliminary Datasheet • High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process CDMA • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -12.0 to 0 dBm
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CMH82
VQFN-20
CMH82
MMIC code -03
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Untitled
Abstract: No abstract text available
Text: FREQUENCY Oven Controlled Crystal Oscillator for Switching applications rev-W3 Specifications Parameters F r eq u en c y Oven Controlled Crystal Oscillator for Switching applications (rev-W3) July 27, 2006 Specifications Ref Parameters 1 2 2.1 2.2 3 4 4.1
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30min
20years
10-150Hz
BO3-34
DOC4830
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Untitled
Abstract: No abstract text available
Text: CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -9.0 to 0 dBm
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CMH192
VQFN-20
CMH192
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Untitled
Abstract: No abstract text available
Text: AAT530B6 0.5 ~ 3.0 GHz LSB 0.5 dB, 6 Bit Digital Attenuator Features Positive Voltage Operation: 3 V LSB Attenuation: 0.5 dB Attenuation Range: 31.5 dB Bit Error: ±0.3 dB Typical Step Error High IIP3: +42 dBm 16 Lead QFN Package 4mm x 4mm
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AAT530B6
AAT530B6
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Untitled
Abstract: No abstract text available
Text: AAT530B5 0.5 ~ 3.0 GHz LSB 1 dB, 5 Bit Digital Attenuator Features Positive voltage operation: 3 V LSB attenuation: 1 dB Attenuation range: 31 dB Bit error: ±0.3 dB Typical step error High IIP3: +42 dBm 16 lead QFN Package 4mm x 4mm
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AAT530B5
AAT530B5
AAT530B6
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Infineon CMH192 GaAs
Abstract: CMH192 mmic MIXER 210
Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm
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CMH192
VQFN-20
CMH192
Infineon CMH192 GaAs
mmic MIXER 210
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PG311
Abstract: No abstract text available
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
PG311
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marking DIODE W4
Abstract: No abstract text available
Text: BA592WS SILICON RF SWITCHING DIODE Features • Very low forward resistance • Small capacitance PINNING Applications • For band switching in TV/VTR tuners and mobile applications Absolute Maximum Ratings Ta = 25 OC Parameter DESCRIPTION PIN 1 Cathode
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BA592WS
OD-323
OD-323
marking DIODE W4
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he w4
Abstract: No abstract text available
Text: BA592WS SILICON RF SWITCHING DIODE Features • Very low forward resistance • Small capacitance PINNING Applications • For band switching in TV/VTR tuners and mobile applications Absolute Maximum Ratings Ta = 25 OC Parameter DESCRIPTION PIN 1 Cathode
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BA592WS
OD-323
OD-323
he w4
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SOD-323 smd code UM
Abstract: Diode SOD-323 smd code UM 18 w4 DIODE diode marking code W4 smd diode UM 08 CODE W4 diode MARKING CODE RP SMD Switching diode SOD323 DIODE marking W4 diode marking code W4 SOD-323
Text: BA592ST SILICON RF SWITCHING DIODE PINNING FEATURES ● Very low forward resistance PIN typ.0.45Ω@3mA ● Small capacitance APPLICATIONS ˙ For band switching in TV/VTR tuners and mobile applications DESCRIPTION 1 Cathode 2 Anode 1 W4 2 Top view Marking Code: "W4"
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BA592ST
OD-323
Junctio25
OD-323
SOD-323 smd code UM
Diode SOD-323 smd code UM 18
w4 DIODE
diode marking code W4
smd diode UM 08
CODE W4
diode MARKING CODE RP
SMD Switching diode SOD323
DIODE marking W4
diode marking code W4 SOD-323
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smd DIODE code marking Q
Abstract: diode MARKING CODE RP diode marking code W4 SOD-323 smd diode UM 08 Diode SOD-323 smd code UM 18
Text: BA592ST SILICON RF SWITCHING DIODE PINNING FEATURES ● Very low forward resistance PIN typ.0.45Ω@3mA ● Small capacitance APPLICATIONS ˙ For band switching in TV/VTR tuners and mobile applications DESCRIPTION 1 Cathode 2 Anode 1 W4 2 Top view Marking Code: "W4"
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BA592ST
OD-323
OD-323
smd DIODE code marking Q
diode MARKING CODE RP
diode marking code W4 SOD-323
smd diode UM 08
Diode SOD-323 smd code UM 18
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smd DIODE code marking Q
Abstract: smd diode UM 08 diode marking code W4 SOD-323 marking DIODE W4
Text: BA592ST SILICON RF SWITCHING DIODE PINNING FEATURES ● Very low forward resistance PIN typ.0.45Ω@3mA ● Small capacitance APPLICATIONS ˙ For band switching in TV/VTR tuners and mobile applications DESCRIPTION 1 Cathode 2 Anode 1 W4 2 Top view Marking Code: "W4"
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BA592ST
OD-323
OD-323
smd DIODE code marking Q
smd diode UM 08
diode marking code W4 SOD-323
marking DIODE W4
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