KRC284U
Abstract: marking Mt
Text: SEMICONDUCTOR KRC284U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MT 1 2 Item Marking Description Device Mark MT KRC284U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRC284U
KRC284U
marking Mt
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)
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KRC281U
KRC286U
KRC281U
KRC282U
KRC284U
KRC285U
KRC283U
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KRC286U
Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U
Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)
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KRC281U
KRC286U
KRC281U
KRC282U
KRC285U
KRC283U
KRC284U
KRC286U
KRC282U
KRC283U
KRC284U
KRC285U
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KRC285U
Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)
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KRC281U
KRC286U
KRC281U
KRC282U
KRC285U
KRC283U
KRC284U
KRC285U
KRC286U
audio transistor
KRC282U
KRC283U
KRC284U
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